Search Results - "Fayrushin, A"

Using friction welding for producing heat exchanger equipment from martensitic 15Kh5M steel by Mulikov, D. Sh, Rizvanov, R. G., Karetnikov, D. V., Fayrushin, A. M.

“…The results of mechanical and other types of tests of metal of welded joints in pipe blanks of 15Kh5M martensitic steel, produced by friction welding with…”
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Unified Endurance Degradation Model of Floating Gate NAND Flash Memory by Fayrushin, A., Chang-Hyun Lee, Youngwoo Park, Jeong-Hyuk Choi, Chilhee Chung

“…Endurance degradation model applicable to the broad node range of floating-gate NAND flash memory is proposed for the first time. The model is based on…”
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Reliability of sub 30NM BT(Body-Tied)-FinFET with HFSION/Poly Silicon Gate Stack for symmetric Vth control by Eun Suk Cho, Choong-Ho Lee, Fayrushin, A., Hong Bae Park, Donggun Park

“…In this paper, a symmetric threshold voltage of W fin =10nm FinFET has been achieved by using HfSiON dielectric (V tn = 0.25V / V tp = -0.28V) since the…”
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OF PROCESSING PARAMETERS OF VIBRATION DURING WELDING ON THE PROPERTIES OF WELDED JOINTS by R. G. Rizvanov, A. M. Fayrushin, D. V. Karetnikov

“…The researches of influence of vibrating processing regimes on mechanical and other properties of the welded joints received by fusion welding are carried out…”
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Technology Breakthrough of Body-Tied FinFET for sub 50 nm NOR Flash Memory by Cho, E., Kim, T.-Y., Cho, B., Lee, C.-H., Lee, J., Fayrushin, A., Lee, C., Park, D., Ryu, B.-I.

“…We have achieved an optimal scheme for the practical application of body-tied FinFET for sub 50 nm NOR flash memory. Using this scheme, high program speed…”
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The new program/erase cycling degradation mechanism of NAND flash memory devices by Fayrushin, A., KwangSoo Seol, JongHoon Na, SungHoi Hur, JungDal Choi, Kinam Kim

“…NAND memory cells scaled to 51-32 nm, when they receive stress due to program and erase cycles, not only reveal a gradual positive shift of a midgap voltage in…”
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Endurance Prediction of Scaled NAND Flash Memory Based on Spatial Mapping of Erase Tunneling Current by Fayrushin, A, ChangHyun Lee, Youngwoo Park, Jungdal Choi, Jeonghyuk Choi, Chilhee Chung

“…In this work, we present novel endurance prediction technique for scaled NAND Flash memory with arbitrary size and shape. Predicted endurance curve is obtained…”
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Physical Modeling and Analysis on Improved Endurance Behavior of P-Type Floating Gate NAND Flash Memory by ChangHyun Lee, Fayrushin, A., Sunghoi Hur, Youngwoo Park, Jungdal Choi, Jeonghyuk Choi, Chilhee Chung

“…In this work, we report improved endurance of p-type floating-gate NAND flash cell. The physical model on the endurance and data retention of p-type…”
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Improved performance of multi-giga bit NAND flash using channel orientation by Hye Jin Cho, Byung Young Choi, Hee Soo Kang, Suk-Kang Sung, Tae Hun Kim, Byung Kyu Cho, Donguk Choi, Fayrushin, A., Jong Ho Lim, Ji-Hwon Lee, Kim, A.T., Hong-Shik Kim, In Sun Jung, Yonghan Roh, Choong-Ho Lee, Kyucharn Park, Donggun Park

“…In this paper, we report the enhanced performance of multi-giga bit NAND flash memory through the combined effects of uniaxial compressive stress and -oriented…”
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