Search Results - "Fattorini, Anthony P."

Impact of Bias and Device Structure on Gate Junction Temperature in AlGaN/GaN-on-Si HEMTs by Schwitter, Bryan K., Parker, Anthony E., Mahon, Simon J., Fattorini, Anthony P., Heimlich, Michael C.

“…The thermal impact of device bias-state and structures (such as source connected field plates, gate-pitch, back-vias, and number of gate fingers) in…”
Get full text

Study of Gate Junction Temperature in GaAs pHEMTs Using Gate Metal Resistance Thermometry by Schwitter, Bryan K., Parker, Anthony E., Fattorini, Anthony P., Mahon, Simon J., Heimlich, Michael C.

“…Gate junction temperature is presented as the crucial parameter for modeling thermal degradation in GaAs device reliability studies, and sufficient for…”
Get full text

Measurement and Modeling of Thermal Behavior in InGaP/GaAs HBTs by Sevimli, Oya, Parker, Anthony E., Fattorini, Anthony P., Mahon, Simon J.

“…Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transistors (HBTs) are extracted from low-frequency S-parameters…”
Get full text

Channel temperature estimation in GaAs FET devices by Fattorini, Anthony P, Tarazi, Jabra, Mahon, Simon J

“…Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult…”
Get full text

Parameter Extractions for a GaAs pHEMT Thermal Model Using a TFR-Heated Test Structure by Schwitter, Bryan K., Fattorini, Anthony P., Parker, Anthony E., Mahon, Simon J., Heimlich, Michael C.

“…The temperature-dependent thermal conductivities of a GaAs pseudomorphic high-electron mobility transistor's (pHEMT) substrate and epilayer regions are…”
Get full text

Channel temperature estimation in GaAs FET devices by Fattorini, Anthony P., Tarazi, Jabra, Mahon, Simon J.

“…Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult…”
Get full text

GaAs MMIC pHEMT gate metal thermometry by Schwitter, Bryan K., Parker, Anthony E., Albahrani, Sayed A., Fattorini, Anthony P., Heimlich, Michael C.

“…A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate…”
Get full text

GaAs E Band Radio Chip-Set by Tarazi, Jabra, Rodriguez, Melissa C., Dadello, Anna, McCulloch, MacCrae G., Fattorini, Anthony P., Hwang, Steve, Clement, Ryan, Parker, Anthony E., Harvey, James T., Mahon, Simon J.

“…A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain,…”
Get full text

A scalable linear model for FETs by Tarazi, J., Mahon, S. J., Fattorini, A. P., Heilmich, M. C., Parker, A. E.

“…A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are…”
Get full text

Full ETSI E-Band Doubler, Quadrupler and 24 dBm Power Amplifier by Rodriguez, M. C., Tarazi, J., Dadello, A., Convert, E. R. O., McCulloch, M. G., Mahon, S. J., Hwang, S., Mould, R. G., Fattorini, A. P., Young, A. C., Harvey, J. T., Parker, A. E., Heimlich, M. C., Wen-Kai Wang

“…A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power…”
Get full text

6.5 Watt, 35 GHz Balanced Power Amplifier MMIC using 6-Inch GaAs pHEMT Commercial Technology by Mahon, S.J., Young, A.C., Fattorini, A.P., Harvey, J.T.

“…A 6.5 watt power amplifier MMIC has been developed for the 35 GHz band. The amplifier exhibits high performance at low processing cost through the use of a…”
Get full text

Packaged, Integrated 32 to 40 GHz Millimeter-Wave Up-Converter by Convert, E R O, Fattorini, A P, Mahon, S J, Evans, P W, McCulloch, M G, Hwang, S, Mould, R G, Young, A C, Harvey, J T

“…A 4 × 4 mm QFN overmoulded packaged up-converter has been developed for the 38 GHz point-to-point radio band. The MMIC contains LO-doubler-buffer amplifier,…”
Get full text

Development and verification of a scalable GaAs pHEMT FEM thermal model by Schwitter, Bryan K., Fattorini, Anthony P., Mahon, Simon J., Parker, Anthony E., Heimlich, Michael C.

“…An accurate scalable 3-D thermal finite-element-method (FEM) model is developed and verified for a GaAs pHEMT process using gate resistance thermometry (GRT)…”
Get full text

Chua's chaotic oscillator as the GaAs manufacturing process state indicator by Kuxa, Evgeny, Parker, Anthony E., Mahon, Simon J., Fattorini, Anthony P., Wang, Wen-Kai, Kuo, Richard, Heimlich, Michael C.

“…This paper presents the results of the measurements of a GaAs Chua's circuit used for a new manufacturing process monitor. The proposed monitoring method is…”
Get full text

Time-varying low-frequency noise in InGaP/GaAs HBTs by Sevimli, Oya, Parker, Anthony E., Mahon, Simon J., Fattorini, Anthony P.

“…Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from two different foundries. Frequency-domain noise spectral…”
Get full text

De-embedding system noise from two-channel low-frequency noise measurements by Sevimli, Oya, Parker, Anthony E., Mahon, Simon J., Fattorini, Anthony P.

“…Two-channel noise measurements are useful for obtaining all four noise parameters of a transistor for circuit simulation and for locating the noise sources…”
Get full text

Steady state and transient thermal analyses of GaAs pHEMT devices by Schwitter, B. K., Heimlich, M. C., Fattorini, A. P., Tarazi, J.

“…GaAs pHEMT thermal reliability test structures are introduced which incorporate on-wafer heating using Thin Film Resistors (TFR) and a DC gate metal…”
Get full text

Thermal impedance modeling of GaAs multi-finger HBTs from low frequency s-parameter measurements by Sevimli, O., Parker, A. E., Fattorini, A. P., Harvey, J. T.

“…Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and needs to be taken into account in circuit design. It can be…”
Get full text

Accurately measured two-port low frequency noise and correlation of GaAs based HBTs by Sevimli, O., Parker, A. E., Fattorini, A. P., Harvey, J. T.

“…Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz…”
Get full text

Diplexer-like bias circuits for stabilizing GaAs HBTs during low frequency measurements by Sevimli, O., McCulloch, G., Mould, R., Harvey, J. T., Fattorini, A. P., Young, A. C., Parker, A. E.

“…GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase noise operation. Prediction of phase noise requires…”
Get full text