Search Results - "Fattorini, A P"

Very low frequency s-parameter measurements for transistor noise modeling by Sevimli, O, Parker, A E, Fattorini, A P, Harvey, J T

“…Correct measurement of low frequency noise in a transistor requires prior knowledge of its s-parameters but the measurement of s-parameters at very low…”
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A scalable linear model for FETs by Tarazi, J., Mahon, S. J., Fattorini, A. P., Heimlich, M., Parker, A. E.

“…Summary form only given, as follows. A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. The…”
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A scalable linear model for FETs by Tarazi, J., Mahon, S. J., Fattorini, A. P., Heilmich, M. C., Parker, A. E.

“…A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are…”
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35 dBm, 35 GHz power amplifier MMICs using 6-inch GaAs pHEMT commercial technology by Mahon, S.J., Dadello, A., Fattorini, A.P., Bessemoulin, A., Harvey, J.T.

“…A 3.5 watt, 35 GHz power amplifier MMIC has been developed. The amplifier exhibits high performance at low processing cost, through the use of a commercially…”
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Full ETSI E-Band Doubler, Quadrupler and 24 dBm Power Amplifier by Rodriguez, M. C., Tarazi, J., Dadello, A., Convert, E. R. O., McCulloch, M. G., Mahon, S. J., Hwang, S., Mould, R. G., Fattorini, A. P., Young, A. C., Harvey, J. T., Parker, A. E., Heimlich, M. C., Wen-Kai Wang

“…A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power…”
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Packaged, Integrated 32 to 40 GHz Millimeter-Wave Up-Converter by Convert, E R O, Fattorini, A P, Mahon, S J, Evans, P W, McCulloch, M G, Hwang, S, Mould, R G, Young, A C, Harvey, J T

“…A 4 × 4 mm QFN overmoulded packaged up-converter has been developed for the 38 GHz point-to-point radio band. The MMIC contains LO-doubler-buffer amplifier,…”
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Steady state and transient thermal analyses of GaAs pHEMT devices by Schwitter, B. K., Heimlich, M. C., Fattorini, A. P., Tarazi, J.

“…GaAs pHEMT thermal reliability test structures are introduced which incorporate on-wafer heating using Thin Film Resistors (TFR) and a DC gate metal…”
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Thermal impedance modeling of GaAs multi-finger HBTs from low frequency s-parameter measurements by Sevimli, O., Parker, A. E., Fattorini, A. P., Harvey, J. T.

“…Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and needs to be taken into account in circuit design. It can be…”
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Accurately measured two-port low frequency noise and correlation of GaAs based HBTs by Sevimli, O., Parker, A. E., Fattorini, A. P., Harvey, J. T.

“…Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz…”
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Diplexer-like bias circuits for stabilizing GaAs HBTs during low frequency measurements by Sevimli, O., McCulloch, G., Mould, R., Harvey, J. T., Fattorini, A. P., Young, A. C., Parker, A. E.

“…GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase noise operation. Prediction of phase noise requires…”
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Packaged Q band medium power amplifier by Mahon, S. J., Fattorini, A. P., Convert, E. R. O., Mould, R. G., Evans, P. W., Harvey, J. T.

“…A packaged, medium-power, driver amplifier for the ETSI 42 GHz point-to-point radio band has been designed. The packaged part has a gain of 21 dB, OIP3 of 33…”
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Q band up-converter by Convert, E. R. O., Mahon, S. J., Harvey, J. T., Hwang, M. G. M. S., Mould, R. G., Fattorini, A. P., Clement, R. M., Young, A. C.

“…A packaged up-converter has been developed for the ETSI 42 GHz point-to-point radio band. The MMIC contains an LO-doubler-buffer amplifier, an image-reject…”
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Q and V band doublers and receivers by Convert, E. R. O., Mahon, S. J., Fattorini, A. P., Dadello, A., Tarazi, J., McCulloch, M. G., Hwang, S., Harvey, J. T.

“…A Q band doubler and a self-biased V band doubler are presented. The Q band doubler has an output power of 18 dBm and a PAE of 14% which is the highest PAE…”
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