Search Results - "Fathimulla, A."

Frequency-Selective Predistortion Linearization of RF Power Amplifiers by Roblin, P., Suk Keun Myoung, Chaillot, D., Young Gi Kim, Fathimulla, A., Strahler, J., Bibyk, S.

“…This paper presents a frequency-selective RF vector predistortion linearization system for RF multicarrier power amplifiers (PAs) affected by strong…”
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Multi-use, low SWaP, ultra-sensitive photoreceiver arrays for ladar & remote sensing by Aina, L., Fathimulla, A., Hier, H., Jiang, W., Foshee, J., Arnold, J.

“…A monolithic photoreceiver is described, which combines a vertical cavity optical amplifier (VCSEL) optical preamplifier (VCSOA) with an RTBT optical converter…”
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Monolithic photoreceiver technology for free space optical networks by Aina, L., Fathimulla, A., Hier, H., Foshee, J., Arnold, J.

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High-performance InAlAs/InGaAs HEMTs and MESFETs by Fathimulla, A., Abrahams, J., Loughran, T., Hier, H.

“…The fabrication and microwave performance of heterostructure InAlAs/InGaAs HEMTs (high-electron-mobility transistors) and MESFETs are described. Maximum stable…”
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Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs by Kuang, J.B., Tasker, P.J., Wang, G.W., Chen, Y.K., Eastman, L.F., Aina, O.A., Hier, H., Fathimulla, A.

“…The authors report the influence of the kink effect on the DC and microwave performance of i-InAlAs heterojunction doped-channel MESFETs lattice matched to an…”
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Single‐step lift‐off process using chlorobenzene soak on AZ4000 resists by Fathimulla, A.

“…A single‐step lift‐off process using chlorobenzene soak on AZ4110 resist is described. The effects of the soak time and temperature on the thickness of the…”
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Heterojunction InAlAs/InP MESFETs grown by OMVPE by Fathimulla, M.A., Loughran, T., Stecker, L., Hempfling, E., Mattingly, M., Aina, O.

“…Lattice-matched InAlAs/n-InP and InAlAs/n/sup +/-InP heterostructure MESFETs with extrinsic transconductances of 220 and 155 mS/mm, respectively, have been…”
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Submicron-gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal-semiconductor field-effect transistors grown by molecular beam epitaxy by KUANG, J. B, TASKER, P. J, CHEN, Y. K, WANG, G. W, EASTMAN, L. F, AINA, O. A, HIER, H, FATHIMULLA, A

“…We report the dc and microwave performance of i-InAlAs/n+-InGaAs/i-InAlAs heterojunction metal-semiconductor field-effect transistors (MESFETs) with gate…”
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ECR-plasma-deposited gate dielectrics for InP MISFETs by Fathimulla, A., Gutierrez, D.

“…The authors present the properties of SiO/sub 2/ and Si/sub 3/N/sub 4/ films for various deposition parameters and the performance of an InP metal-insulated…”
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Gigahertz logic gates based on InP-MISFET's with minimal drain current drift by Pande, K.P., Fathimulla, M.A., Gutierrez, D., Messick, L.

“…Three-input AND/NOR logic gates based on 3-µm overlapping gate InP-MISFET technology were fabricated and clocked at 1 GHz. The logic gates showed a propagation…”
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A novel insulated-gate InP/InAlAs MODFET by Fathimulla, A., Gutierrez, D., Hier, H.

“…The authors present the results obtained with a novel insulated gate InP/InAlAs modulation doped FET (IG-MODFET) for power applications. The advantage of this…”
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Monolithic integration of InGaAs/InAlAs MODFETs and RTDs on InP-bonded-to Si substrate by Fathimulla, A., Hier, H., Abrahams, J., Loughran, T.

“…The authors report the monolithic integration of InGaAs/InAlAs MODFETs and RTDs MBE grown using selective epitaxy on InP which has been bonded to a silicon…”
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A novel InAlAs/InP/InAlAs pnp double heterojunction bipolar transistor grown by MBE by Fathimulla, A., Hier, H., Gutierrez, D., Potter, R., Abrahams, J.

“…The authors report the growth and fabrication of a double-heterojunction bipolar transistor (DHBT) using the InP/InAlAs material system. The measured Gummel…”
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Second subband population in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures by Lo, Ikai, Mitchel, W. C., Ahoujja, M., Cheng, J.-P., Fathimulla, A., Mier, H.

“…We have observed the population of the second two-dimensional electron subband in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures by Shubnikov–de Haas…”
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Photoreceiver arrays with near-quantum limit performance for free space optical communications by Aina, L., Fathimulla, A., Hier, H., Foshee, J., Arnold, J., Stadler, B.

“…Photoreceiver array configurations for enhancing the sensitivities of free space optical terminals down to the quantum limits are described. Small format…”
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Erratum: ‘‘Second subband population in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures’’ [Appl. Phys. Lett. 66 , 754 (1995)] by Lo, Ikai, Mitchel, W. C., Ahoujja, M., Cheng, J.-P., Fathimulla, A., Mier, H.

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Performance of the AlGaAsSb/GaInAs/GaInAs PNP and AlInAs/GaAsSb/AlInAs NPN HBTs by Fathimulla, A., Hier, H., Gutierrez, D.

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Ultrasensitive APD photoreceivers for GPON and long haul optical transmission by Aina, L.A., Fathimulla, A., Hier, H.

“…We report the development of ultrasensitive photoreceivers, based on ultra high gain and low excess noise APDs, with sensitivities of -35.5 dBm at 2.488 Gbps…”
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Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic by POTTER, R. C, LAKHANI, A. A, BEYEA, D, HIER, H, HEMPFLING, E, FATHIMULLA, A

“…We have developed structures with two well-defined negative differential resistance (NDR) regions by sequentially growing two resonant tunneling devices…”
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Halogen lamp rapid thermal annealing of Si- and Be-implanted In sub(0.53)Ga sub(0.47)As by Rao, M V, Gulwadi, S M, Thompson, P E, Fathimulla, A, Aina, O A

“…Halogen lamp rapid thermal annealing was used to activate 100 keV Si and 50 KeV Be implants in In sub(0.53)Ga sub(0.47)As for doses ranging between 5 x 10…”
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