Search Results - "Fatemi, Navid S."

Operation and component testing of a solar thermophotovoltaic power system by Stone, K.W., Fatemi, N.S., Garverick, L.M.

“…Components of a solar thermophotovoltaic (STPV) power system have been developed and tested. This paper describes the principle of operation of a STPV system,…”
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InGaAs monolithic interconnected modules (MIMs) by Fatemi, N.S., Wilt, D.M., Jenkins, P.P., Weizer, V.G., Hoffman, R.W., Murray, C.S., Scheiman, D., Brinker, D., Riley, D.

“…A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual…”
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Monolithically interconnected InGaAs TPV module development by Wilt, D.M., Fatemi, N.S., Jenkins, P.P., Hoffman, R.W., Landis, G.A., Jain, R.K.

“…This paper describes the status of development of an indium gallium arsenide (InGaAs) monolithically-interconnected module (MIM) for thermophotovoltaic (TPV)…”
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Satellite market trends and the enabling role of multi-junction space solar cells by Fatemi, Navid S.

“…This paper describes an overview of the satellite market trends and the role of high-efficiency multi-junction solar cells in enabling the realization of the…”
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Improved performance of p/n InP solar cells by Hoffman, R.W., Fatemi, N.S., Jenkins, P.P., Weizer, V.G., Stan, M.A., Ringel, S.A., Scheiman, D.A., Wilt, D.M., Brinker, D.J., Walters, R.J., Messenger, S.R.

“…The high electrical conversion performance and radiation resistance of InP solar cells were discovered during the last decade. The combination of these two…”
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The Mars Pathfinder Wheel Abrasion Experiment by Ferguson, Dale C., Wilt, David M., Hepp, Aloysius F., Kolecki, Joseph C., Siebert, Mark W., Jenkins, Phillip P., Scheiman, David A., Fatemi, Navid S., Hoffman, Richard W.

“…On board the Mars Pathfinder spacecraft, launched in December of 1996, was a small roving vehicle named Sojourner. On Sojourner was an experiment to determine…”
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Solar array trades between very high-efficiency multi-junction and Si space solar cells by Fatemi, N.S., Pollard, H.E., Hou, H.Q., Sharps, P.R.

“…This paper describes a trade study between state-of-the-art, commercially-available very high-efficiency III-V multi-junction solar cells and advanced…”
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Performance of high-efficiency advanced triple-junction solar panels for the LILT Mission Dawn by Fatemi, N.S., Sharma, S., Buitrago, O., Crisman, J., Sharps, P.R., Blok, R., Kroon, M., Jalink, Cees, Harris, R., Stella, P., Distefano, S.

“…NASA's Discovery Mission Dawn is designed to operate within the solar system's Asteroid belt, where the large distance from the sun creates a low-intensity,…”
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High efficiency indium gallium arsenide photovoltaic devices for thermophotovoltaic power systems by Wilt, David M., Fatemi, Navid S., Hoffman, Richard W., Jenkins, Phillip P., Brinker, David J., Scheiman, David, Lowe, Roland, Fauer, Maria, Jain, Raj K.

“…The development of indium gallium arsenide (Eg=0.75 eV) photovoltaic devices for thermophotovoltaic power generation is described. A device designed for…”
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A unique, device-friendly contact system for shallow junction p/n indium phosphide devices by WEIZER, V. G, FATEMI, N. S

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Very high efficiency InGaP/GaAs dual-junction solar cell manufacturing at Emcore Photovoltaics by Hou, H.Q., Sharps, P.R., Fatemi, N.S., Li, N., Stan, M.A., Martin, P.A., Hammons, B.E., Spadafora, F.

“…The electrical performance and space qualification data of very high efficiency dual junction n/p InGaP/GaAs (on Ge) solar cells manufactured at Emcore…”
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Design and production of extremely radiation-hard 26% InGaP/GaAs/Ge triple-junction solar cells by Stan, M.A., Sharps, P.R., Fatemi, N.S., Spadafora, F., Aiken, D., Hou, H.Q.

“…The authors report the design and testing of extremely radiation-hard high-efficiency large-area InGaP/GaAs/Ge triple-junction solar cells. The solar cell…”
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An x‐ray photoelectron spectroscopy study of Au x In y alloys by Jayne, Douglas T., Fatemi, Navid S., Weizer, Victor G.

“…Four gold–indium alloys have been studied by x‐ray photoelectron spectroscopy. The binding energies and intensity ratios of the Au 4f 7/2 and In 3d 5/2 core…”
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Simple, extremely low resistance contact system to n-InP that does not exhibit metal-semiconductor intermixing during sintering by Weizer, Victor G., Fatemi, Navid S.

“…Contact formation to InP is plagued by the violent metal-semiconductor intermixing that takes place during the contact sintering process. We have discovered a…”
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The formation of low resistance electrical contacts to shallow junction InP devices without compromising emitter integrity by FATEMI, N. S, WEIZER, V. G

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High beginning-of-life efficiency p/n InP solar cells by Hoffman Jr, Richard W., Fatemi, Navid S., Weizer, Victor G., Jenkins, Phillip P., Stan, Mark A., Ringel, Steven A., Scheiman, David A., Wilt, David M., Brinker, David J.

“…The high electrical conversion performance and radiation resistance of InP solar cells was discovered during the last decade. The combination of these two…”
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Humidity-induced room-temperature decomposition of Au contacted indium phosphide by Fatemi, Navid S., Weizer, Victor G.

“…It has been found that Au-contacted InP is chemically unstable at room temperature in a humid ambient due to the leaching action of indium nitrate islands that…”
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Ultra-low resistance, nondestructive contact system for InP/InGaAs/InP double heterostructure TPV devices by Fatemi, N.S., Weizer, V.G., Wilt, D.M., Hoffman, R.W.

“…A contact system for use on the n/sup +/ InP window layer of an InP/InGaAs/InP thermophotovoltaic (TPV) cell is described. The contact system, composed of an…”
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Metal-silicon reaction rates - The effects of capping by Weizer, Victor G., Fatemi, Navid S.

“…Evidence is presented showing that the presence of the commonly used anti-reflection coating material Ta2O5 on the free surface of contact metallization can…”
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High efficiency InP solar cells from low toxicity tertiarybutylphosphine and trimethylindium by OMVPE by Hoffman, R.W., Fatemi, N.S., Wilt, D.M., Jenkins, P.P., Brinker, D., Scheiman, D.A.

“…Large scale manufacture of phosphide based compound semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly…”
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