The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs

A significant contribution of fringing field effect on radiation-induced leakage current in oxide isolation structure and damage nonuniformity in MOSFET was demonstrated using analytical expressions for electrical field. A two dimensional analytical model describing electrical field distribution in...

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Bibliographic Details
Published in:	IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41; no. 6; pp. 1895 - 1901
Main Authors:	Pershenkov, V.S., Chirokov, M.S., Bretchko, P.T., Fastenko, P.O., Baev, V.K., Belyakov, V.V.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	New York, NY IEEE 01-12-1994 Institute of Electrical and Electronics Engineers
Subjects:	Analytical models ANALYTICAL SOLUTION CHARGE COLLECTION Doping ELECTRICAL PROPERTIES Electron traps FIELD EFFECT TRANSISTORS INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY Leakage current MATHEMATICAL MODELS Microelectronics MOS TRANSISTORS MOSFET MOSFETs PHYSICAL PROPERTIES PHYSICAL RADIATION EFFECTS Physics RADIATION EFFECTS SEMICONDUCTOR DEVICES Semiconductor process modeling Surface fitting TRANSISTORS 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems TRAPPING Voltage
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Summary:	A significant contribution of fringing field effect on radiation-induced leakage current in oxide isolation structure and damage nonuniformity in MOSFET was demonstrated using analytical expressions for electrical field. A two dimensional analytical model describing electrical field distribution in oxide isolation and MOSFET structures was elaborated to provide the dynamics of positive oxide trapped charge build-up process. The leakage current at the bottom of the recessed field oxide calculation was performed using oxide trapped charge density profile obtained through charge build-up process simulated applying electrical field model to changing conditions during irradiation process. Calculations are presented for leakage current versus dose dependencies for different structure dimensions and irradiation conditions; leakage current versus voltage shift of buried layer during irradiation and P/sup +/-channel stop region doping level; and I-V characteristics of parasitic transistor. Experimental data concerning damage nonuniformity are discussed together with calculated data for electrical field pattern and nonuniformity length in MOSFETs.< >
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 None CONF-940726--
ISSN:	0018-9499 1558-1578
DOI:	10.1109/23.340521