Search Results - "Fastenau, J.M"

Quantum Dashes on InP Substrate for Broadband Emitter Applications by Ooi, B.S., Susanto Djie, H., Yang Wang, Chee-Loon Tan, Hwang, J.C.M., Xiao-Ming Fang, Fastenau, J.M., Liu, A.W.K., Dang, G.T., Chang, W.H.

“…We report on the development of InAs/InGaAlAs quantum-dash-in-well structure on InP substrate for wideband emitter applications. A spectral width as broad as…”
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Monolithic integration of InP-based transistors on Si substrates using MBE by Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Bulsara, M.T., Fitzgerald, E.A., Urteaga, M., Ha, W., Bergman, J., Brar, B., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E., Clark, D., Smith, D., Thompson, R.F., Drazek, C., Daval, N.

“…We report on a direct epitaxial growth approach for the heterogeneous integration of high-speed III–V devices with Si CMOS logic on a common Si substrate…”
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Quantum Dash Intermixing by Susanto Djie, H., Yang Wang, Yun-Hsiang Ding, Dong-Ning Wang, Hwang, J., Xiao-Ming Fang, Ying Wu, Fastenau, J.M., Liu, A., Dang, G.T., Chang, W.H., Ooi, B.S.

“…We investigate the intermixing effect in InAs/InAlGaAs quantum-dash-in-well structures grown on InP substrate. Both impurity-free vacancy disordering (IFVD)…”
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Ultrahigh-Speed 0.5 V Supply Voltage \hbox \hbox\hbox Quantum-Well Transistors on Silicon Substrate by Datta, S., Dewey, G., Fastenau, J.M., Hudait, M.K., Loubychev, D., Liu, W.K., Radosavljevic, M., Rachmady, W., Chau, R.

“…The direct epitaxial growth of ultrahigh-mobility InGaAs/InAlAs quantum-well (QW) device layers onto silicon substrates using metamorphic buffer layers is…”
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Wideband DHBTs using a graded carbon-doped InGaAs base by Dahlstrom, M., Fang, X.-M., Lubyshev, D., Urteaga, M., Krishnan, S., Parthasarathy, N., Kim, Y.M., Wu, Y., Fastenau, J.M., Liu, W.K., Rodwell, M.J.W.

“…We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT), fabricated using a mesa structure, exhibiting 282 GHz f/sub /spl tau// and 400 GHz…”
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Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process by Parthasarathy, N., Griffith, Z., Kadow, C., Singisetti, U., Rodwell, M.J.W., Xiao-Ming Fang, Loubychev, D., Ying Wu, Fastenau, J.M., Liu, A.W.K.

“…This letter reports InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors (DHBTs) employing an N/sup +/ subcollector and N/sup +/…”
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Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si by Taghipour, Z., Rogers, V., Ringel, B., Liu, A.W.K., Fastenau, J.M., Lubyshev, D., Nelson, S.A., Krishna, S.

“…Improving the production cost and yield in next-generation infrared focal plane arrays have drawn attention towards the growth of absorbing material on…”
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Ultrahigh-Speed 0.5 V Supply Voltage In0.7 Ga0.3As Quantum-Well Transistors on Silicon Substrate by Datta, S, Dewey, G, Fastenau, J.M, Hudait, M.K, Loubychev, D, Liu, W.K, Radosavljevic, M, Rachmady, W, Chau, R

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A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates by Kazior, T.E., LaRoche, J.R., Lubyshev, D., Fastenau, J.M., Liu, W.K., Urteaga, M., Ha, W., Bergman, J., Choe, M.J., Bulsara, M.T., Fitzgerald, E.A., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., Augendre, E.

“…We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um 2 emitter) with ft and…”
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InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, fmax/spl ges/450 GHz by Griffith, Z., Rodwell, M.J.W., Xiao-Ming Fang, Loubychev, D., Ying Wu, Fastenau, J.M., Liu, A.W.K.

“…InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors (DHBT) have been designed for increased bandwidth digital and analog circuits, and…”
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Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing by Djie, H.S., Wang, D.-N., Ooi, B.S., Hwang, J.C.M., Fang, X.-M., Wu, Y., Fastenau, J.M., Liu, W.K.

“…The effects of rapid thermal annealing on InGaAs quantum dots grown by atomic layer molecular beam epitaxy to the structural transformation and optical…”
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200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax ≫ 800 GHz and ƒτ = 360 GHz by Lobisser, E., Griffith, Z., Jain, V., Thibeault, B.J., Rodwell, M.J.W., Loubychev, D., Snyder, A., Ying Wu, Fastenau, J.M., Liu, A.W.K.

“…Type I InP/InGaAs/InP double heterojunction bipolar transistors were fabricated using a simple mesa structure, where emitter junction widths have been scaled…”
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InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max by Griffith, Z., Dahlstrom, M., Rodwell, M.J.W., Fang, X.-M., Lubyshev, D., Wu, Y., Fastenau, J.M., Liu, W.K.

“…InP-In/sub 0.53/Ga/sub 0.47/As-InP double heterojunction bipolar transistors (DHBT) have been designed for use in high bandwidth digital and analog circuits,…”
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InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f[tau] and 505-GHz fmax by Griffith, Z, Dahlstrom, M, Rodwell, M.J.W, Fang, X.-M, Lubyshev, D, Wu, Y, Fastenau, J.M, Liu, W.K

“…InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBT) have been designed for use in high bandwidth digital and analog circuits, and…”
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InGaAs–InP Mesa DHBTs With Simultaneously High $f_tau$ and $f_max$ and Low $C_rm cb/I_c$ Ratio by Griffith, Z., Dahlstrom, M., Urteaga, M., Rodwell, M.J.W., Fang, X.-M., Lubyshev, D., Wu, Y., Fastenau, J.M., Liu, W.K.

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InGaAs-InP mesa DHBTs with simultaneously high f/sub /spl tau// and fmax and low C/sub cb//I/sub c/ ratio by Griffith, Z., Dahlstrom, M., Urteaga, M., Rodwell, M.J.W., Fang, X.-M., Lubyshev, D., Wu, Y., Fastenau, J.M., Liu, W.K.

“…We report an InP-InGaAs-InP double heterojunction bipolar transistor (DHBT), fabricated using a conventional triple mesa structure, exhibiting a 370-GHz f/sub…”
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InGaAs-InP mesa DHBTs with simultaneously high f[tau] and fmax and low Ccb/Ic ratio by Griffith, Z, Dahlstrom, M, Urteaga, M, Rodwell, M.J.W, Fang, X.-M, Lubyshev, D, Wu, Y, Fastenau, J.M, Liu, W.K

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InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz by Griffith, Z., Rodwell, M.J.W., Xiao-Ming Fang, Loubychev, D., Ying Wu, Fastenau, J.M., Liu, A.W.K.

“…InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors (DHBT) have been designed for increased bandwidth digital and analog circuits, and…”
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Progress and challenges in the direct monolithic integration of III-V devices and Si CMOS on silicon substrates by Kazior, T.E., LaRoche, J.R., Lubyshev, D., Fastenau, J.M., Liu, W.K., Urteaga, M., Ha, W., Bergman, J., Choe, M.J., Bulsara, M.T., Fitzgerald, E.A., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., Augendre, E.

“…We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. Through optimization of device fabrication and…”
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Four-band quantum well infrared photodetector array by Bandara, S.V., Gunapala, S.D., Liu, J.K., Rafol, S.B., Ting, D.Z., Mumolo, J.M., Chuang, R.W., Trinh, T.Q., Liu, J.H., Choi, K.K., Jhabvala, M., Fastenau, J.M., Liu, W.K.

“…A four-band quantum well infrared photodetector (QWIP) focal plane array (FPA) has been demonstrated by stacking different multi-quantum well structures, which…”
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