Search Results - "Farys, V."

Leaching mechanisms in immersion lithography with or without top coat by Gaugiran, S., Feilleux, R., Sourd, C., Warrick, S., Farys, V., Cruau, D., Benndorf, M., Mortini, B.

“…The main difference between dry and immersion lithography lies in the interactions between the immersion medium and photoresist. For example, it has been shown…”
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EUV resist simulation with rigorous mask computation and simplified resist models by Jouve, A., Fuard, D., Farys, V.

“…Precise simulation of the aerial image (AI) performance of a lithographic tool is highly relevant to predict the critical dimension (CD) of patterned features…”
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1.62\mu \mathrm Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared by Steckel, J. S., Josse, E., Pattantyus-Abraham, A. G., Bidaud, M., Mortini, B., Bilgen, H., Arnaud, O., Allegret-Maret, S., Saguin, F., Mazet, L., Lhostis, S., Berger, T., Haxaire, K., Chapelon, L. L., Parmigiani, L., Gouraud, P., Brihoum, M., Bar, P., Guillermet, M., Favreau, S., Duru, R., Fantuz, J., Ricq, S., Ney, D., Hammad, I., Roy, D., Arnaud, A., Vianne, B., Nayak, G., Virollet, N., Farys, V., Malinge, P., Tournier, A., Lalanne, F., Crocherie, A., Galvier, J., Rabary, S., Noblanc, O., Wehbe-Alause, H., Acharya, S., Singh, A., Meitzner, J., Aher, D., Yang, H., Romero, J., Chen, B., Hsu, C., Cheng, K. C., Chang, Y., Sarmiento, M., Grange, C., Mazaleyrat, E., Rochereau, K.

“…We have developed a 1.62\mu \mathrm{m} pixel pitch global shutter sensor optimized for imaging in the near infrared (NIR) and shortwave infrared (SWIR) regions…”
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Design / technology co-optimization of strain-induced layout effects in 14nm UTBB-FDSOI CMOS: Enablement and assessment of continuous-RX designs by Berthelon, R., Andrieu, F., Josse, E., Bingert, R., Weber, O., Serret, E., Aurand, A., Delmedico, S., Farys, V., Bernicot, C., Bechet, E., Bernard, E., Poiroux, T., Rideau, D., Scheer, P., Baylac, E., Perreau, P., Jaud, M. A., Lacord, J., Petitprez, E., Pofelski, A., Ortolland, S., Sardin, P., Dutartre, D., Claverie, A., Vinet, M., Marin, J. C., Haond, M.

“…We report on the main local layout effect in 14nm Ultra-Thin Buried oxide and Body Fully Depleted Silicon On Insulator (UTBB-FDSOI) CMOS technology [1]. This…”
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Highly sensitive detection technique of buried defects in extreme ultraviolet masks using at-wavelength scanning dark-field microscopy by Farys, V., Schiavone, P., Polack, F., Idir, M., Bertolo, M., Bianco, A., La Rosa, S., Cautero, G., Vannuffel, C., Quesnel, E., Muffato, V.

“…A technique to probe defects buried inside extreme ultraviolet (EUV) masks has been implemented using a dark-field microscopy detection setup. Specific samples…”
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