Search Results - "Farrell, R. M."

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture by Leonard, J. T., Cohen, D. A., Yonkee, B. P., Farrell, R. M., Margalith, T., Lee, S., DenBaars, S. P., Speck, J. S., Nakamura, S.

“…We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion…”
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Adolescent cannabinoid exposure effects on natural reward seeking and learning in rats by Schoch, H., Huerta, M. Y., Ruiz, C. M., Farrell, M. R., Jung, K. M., Huang, J. J., Campbell, R. R., Piomelli, D., Mahler, S. V.

“…Rationale Adolescence is characterized by endocannabinoid (ECB)-dependent refinement of neural circuits underlying emotion, learning, and motivation. As a…”
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High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration by Young, N. G., Perl, E. E., Farrell, R. M., Iza, M., Keller, S., Bowers, J. E., Nakamura, S., DenBaars, S. P., Speck, J. S.

“…We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance…”
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Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells by Lang, J. R., Young, N. G., Farrell, R. M., Wu, Y.-R., Speck, J. S.

“…The properties of quantum well carrier escape were studied by varying barrier thicknesses in InGaN/GaN multi-quantum well solar cell devices. The dependence of…”
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Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes by Young, N. G., Farrell, R. M., Oh, S., Cantore, M., Wu, F., Nakamura, S., DenBaars, S. P., Weisbuch, C., Speck, J. S.

“…We demonstrate through simulation that complete screening of polarization-induced electric fields in c-plane InGaN/GaN quantum wells (QWs) is possible by equal…”
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Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates by Pourhashemi, A., Farrell, R. M., Hardy, M. T., Hsu, P. S., Kelchner, K. M., Speck, J. S., DenBaars, S. P., Nakamura, S.

“…We demonstrate high-power AlGaN-cladding-free blue laser diodes (LDs) on semipolar (202¯1¯) GaN substrates with peak output powers and external quantum…”
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Chronic stress alters neural activity in medial prefrontal cortex during retrieval of extinction by Wilber, A.A, Walker, A.G, Southwood, C.J, Farrell, M.R, Lin, G.L, Rebec, G.V, Wellman, C.L

“…Abstract Chronic restraint stress produces morphological changes in medial prefrontal cortex and disrupts a prefrontally mediated behavior, retrieval of…”
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Near-unity below-band-gap absorption by microstructured silicon by Wu, C., Crouch, C. H., Zhao, L., Carey, J. E., Younkin, R., Levinson, J. A., Mazur, E., Farrell, R. M., Gothoskar, P., Karger, A.

“…We increased the absorptance of light by silicon to approximately 90% from the near ultraviolet (0.25 μm) to the near infrared (2.5 μm) by surface…”
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Sex-specific effects of early life stress on social interaction and prefrontal cortex dendritic morphology in young rats by Farrell, M.R., Holland, F.H., Shansky, R.M., Brenhouse, H.C.

“…•Maternal separation has sex-dependent effects on social interaction at P25.•Maternal separation results in dendritic hypertrophy in infralimbic cortex of…”
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High-power blue laser diodes with indium tin oxide cladding on semipolar (202¯1¯) GaN substrates by Pourhashemi, A., Farrell, R. M., Cohen, D. A., Speck, J. S., DenBaars, S. P., Nakamura, S.

“…We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers…”
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Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching by Holder, C. O., Leonard, J. T., Farrell, R. M., Cohen, D. A., Yonkee, B., Speck, J. S., DenBaars, S. P., Nakamura, S., Feezell, D. F.

“…Photoelectrochemical (PEC) band gap selective undercut etching is discussed as an alternative technique to chemical-mechanical polishing and laser-lift off for…”
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High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates by Young, N. G., Farrell, R. M., Hu, Y. L., Terao, Y., Iza, M., Keller, S., DenBaars, S. P., Nakamura, S., Speck, J. S.

“…We demonstrate high performance InGaN/GaN multiple quantum well solar cells with thin quantum barriers and spectral response extending to 460 nm. Devices grown…”
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What patients are reading about noninvasive prenatal testing: an evaluation of Internet content and implications for patient-centered care by Mercer, M. B., Agatisa, P. K., Farrell, R. M.

“…ABSTRACT Objective Patients' use of the Internet as a source of health information is increasing. The objective of this study was to describe and evaluate…”
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Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes by Myzaferi, A., Reading, A. H., Cohen, D. A., Farrell, R. M., Nakamura, S., Speck, J. S., DenBaars, S. P.

“…The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of…”
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Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode by Sharma, R., Pattison, P. M., Masui, H., Farrell, R. M., Baker, T. J., Haskell, B. A., Wu, F., DenBaars, S. P., Speck, J. S., Nakamura, S.

“…We demonstrate the growth and fabrication of a semipolar (101¯3¯) InGaN∕GaN green (∼525nm) light emitting diode (LED). The fabricated devices demonstrated a…”
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Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes by Farrell, R. M., Hsu, P. S., Haeger, D. A., Fujito, K., DenBaars, S. P., Speck, J. S., Nakamura, S.

“…We demonstrate AlGaN-cladding-free m -plane InGaN/GaN laser diodes with threshold current densities that are comparable to state-of-the-art c -plane InGaN/GaN…”
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Selective Plasma Hydrolysis of Glucocorticoid γ-Lactones and Cyclic Carbonates by the Enzyme Paraoxonase: An Ideal Plasma Inactivation Mechanism by Biggadike, Keith, Angell, Richard M, Burgess, Colin M, Farrell, Rosanne M, Hancock, Ashley P, Harker, Andy J, Irving, Wendy R, Ioannou, Chris, Procopiou, Panayiotis A, Shaw, Rupert E, Solanke, Yemisi E, Singh, Onkar M. P, Snowden, Michael A, Stubbs, Rob J, Walton, Sarah, Weston, Helen E

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Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells by Kowsz, S. J., Pynn, C. D., Oh, S. H., Farrell, R. M., Speck, J. S., DenBaars, S. P., Nakamura, S.

“…We report a device design that monolithically integrates an electrically injected blue light-emitting diode grown on the (202¯1¯) face of a bulk GaN substrate…”
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Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy by Pynn, C. D., Kowsz, S. J., Oh, S. H., Gardner, H., Farrell, R. M., Nakamura, S., Speck, J. S., DenBaars, S. P.

“…The performance of multiple quantum well green and yellow semipolar light-emitting diodes (LEDs) is limited by relaxation of highly strained InGaN-based active…”
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Brain adaptation to chronic hypobaric hypoxia in rats by LaManna, J C, Vendel, L M, Farrell, R M

“…Rats were exposed to hypobaric hypoxia (0.5 atm) for up to 3 wk. Hypoxic rats failed to gain weight but maintained normal brain water and ion content. Blood…”
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