Search Results - "Farmakis, F."

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  1. 1

    Silicon/LiNi0·8Co0·15Al0·05O2 lithium-ion pouch cells charging and discharging at −40 °C temperature by Subburaj, T., Brevet, W., Farmakis, F., Tsiplakides, D., Balomenou, S., Strataki, N., Elmasides, C., Samaniego, B., Nestoridi, M.

    Published in Electrochimica acta (10-09-2020)
    “…Though Li-ion batteries offer excellent performance at room temperature, their operation at subzero temperatures is restricted by the capacity and the poor…”
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    Journal Article
  2. 2

    Impact of electrolyte on the electrochemical performance of Lithium-ion half and full cells with Silicon film anodes by Farmakis, F., Elmasides, C., Selinis, P., Georgoulas, N.

    Published in Electrochimica acta (10-08-2017)
    “…Amongst anode materials for lithium ion batteries, silicon's high theoretical capacity, environmental friendliness, low potential vs Li/Li+, material abundance…”
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    Journal Article
  3. 3

    Permanent water swelling effect in low temperature thermally reduced graphene oxide by Papamatthaiou, S., Argyropoulos, D.-P., Masurkar, A., Cavallari, M. R., Farmakis, F., Kymissis, I., Georgoulas, N.

    Published in Applied physics letters (19-06-2017)
    “…We demonstrate permanent water trapping in reduced graphene oxide after high relative humidity exposure. For this purpose, we grew graphene oxide films via…”
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    Journal Article
  4. 4

    High Specific Energy Lithium Cells for Space Exploration by Farmakis, F., Georgoulas, N., Karafyllidis, I., Amoiridis, I., Elmasides, C., Balomenou, S., Tsiplakides, D., Nestoridi, M.

    Published in E3S Web of Conferences (01-01-2017)
    “…The paper discusses development under an ESA TRP activity (Contract No. 4000109879/13/NL/LvH) with a target of high specific energy Lithium-ion cells, capable…”
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    Journal Article Conference Proceeding
  5. 5

    Field-effect transistors with thin ZnO as active layer for gas sensor applications by Farmakis, F.V., Speliotis, Th, Alexandrou, K.P., Tsamis, C., Kompitsas, M., Fasaki, I., Jedrasik, P., Petersson, G., Nilsson, B.

    Published in Microelectronic Engineering (01-05-2008)
    “…Zinc oxide based field-effect devices prepared for gas sensing applications are studied. For this purpose, bottom-gate transistors were fabricated using Pd as…”
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    Journal Article Conference Proceeding
  6. 6

    Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors by Farmakis, F.V., Brini, J., Kamarinos, G., Dimitriadis, C.A.

    Published in IEEE electron device letters (01-02-2001)
    “…In this letter, we present experimental data showing that hot-carrier stress in laser annealed polycrystalline silicon thin-film transistors provokes an…”
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    Journal Article
  7. 7

    Characterization of thin film transistors fabricated on different sequential lateral solidified poly-silicon substrates by Michalas, L., Papaioannou, G.J., Kouvatsos, D.N., Farmakis, F.V., Voutsas, A.T.

    Published in Microelectronic engineering (01-05-2008)
    “…Polycrystalline silicon quality is a key issue parameter for the performance and reliability of thin film transistors. Therefore in the present work, the…”
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    Journal Article Conference Proceeding
  8. 8

    Device degradation behavior and polysilicon film morphology of thin film transistors fabricated using advanced excimer laser lateral solidification techniques by Kouvatsos, D.N., Voutsas, A.T., Michalas, L., Farmakis, F.V., Papaioannou, G.J.

    Published in Thin solid films (16-07-2007)
    “…The degradation of polysilicon thin film transistors fabricated in films obtained using variations of advanced through-mask excimer laser anneal sequential…”
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    Journal Article Conference Proceeding
  9. 9

    Degradation of double-gate polycrystalline silicon TFTs due to hot carrier stress by Farmakis, F.V., Kontogiannopoulos, G.P., Kouvatsos, D.N., Voutsas, A.T.

    Published in Microelectronics and reliability (01-09-2007)
    “…Degradation phenomena due to hot carrier stress conditions were investigated in double-gate polysilicon thin film transistors fabricated by sequential lateral…”
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    Journal Article Conference Proceeding
  10. 10

    Hydrogenation in laser annealed polysilicon thin-film transistors (TFTs) by Farmakis, F.V., Tsamados, D.M., Brini, J., Kamarinos, G., Dimitriadis, C.A., Miyasaka, M.

    Published in Thin solid films (15-02-2001)
    “…Hydrogenation effects in excimer laser annealed polysilicon thin-film transistors (TFTs) were studied. Hydrogen plasma formed from hydrogen diluted with Ar or…”
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    Journal Article Conference Proceeding
  11. 11

    On-current modeling of large-grain polycrystalline silicon thin-film transistors by Farmakis, F.V., Brini, J., Kamarinos, G., Angelis, C.T., Dimitriadis, C.A., Miyasaka, M.

    Published in IEEE transactions on electron devices (01-04-2001)
    “…Large-grain excimer laser-annealed polysilicon TFTs are studied. Due to the large grain size of the polysilicon film (about 2.5 /spl mu/m), we propose a model…”
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    Journal Article
  12. 12

    Grain and grain-boundary control of the transfer characteristics of large-grain polycrystalline silicon thin-film transistors by Farmakis, F.V, Brini, J, Kamarinos, G, Angelis, C.T, Dimitriadis, C.A, Miyasaka, M, Ouisse, T

    Published in Solid-state electronics (01-06-2000)
    “…Thin-film transistors (TFTs), fabricated on solid-phase-crystallized polycrystalline silicon (polysilicon) films subjected to laser annealing, were studied…”
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    Journal Article
  13. 13

    Effects of hydrogenation on the performance and hot-carrier endurance of polysilicon thin-film transistors by Farmakis, F.V., Dimitriadis, C.A., Brini, J., Kamarinos, G.

    Published in IEEE electron device letters (01-02-2001)
    “…Statistical analysis was performed to investigate the performance and reliability of hydrogenated polysilicon thin-film transistors (TFTs) in relation to the…”
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    Journal Article
  14. 14

    Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors by Angelis, C. T., Dimitriadis, C. A., Farmakis, F. V., Brini, J., Kamarinos, G., Miyasaka, M.

    Published in Applied physics letters (24-04-2000)
    “…Based on experimental studies of n-channel excimer-laser-annealed polycrystalline silicon thin-film transistors with gate ratio width/length varying from 0.5…”
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    Journal Article
  15. 15

    Transconductance of large grain excimer laser-annealed polycrystalline silicon thin film transistors by Angelis, C.T., Dimitriadis, C.A., Farmakis, F.V., Brini, J., Kamarinos, G., Miyasaka, M., Stoemenos, I.

    Published in Solid-state electronics (01-06-2000)
    “…An analytical model of the above-threshold voltage transconductance of large grain polycrystalline silicon thin-film transistors (TFTs) is presented. The…”
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    Journal Article
  16. 16

    Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs) by Farmakis, F.V, Dimitriadis, C.A, Brini, J, Kamarinos, G, Gueorguiev, V.K, Ivanov, Tz.E

    Published in Solid-state electronics (01-07-1999)
    “…A study on hot-carrier phenomena in high temperature processed undoped and hydrogenated n-channel polysilicon thin film transistors (TFTs) is presented. First,…”
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    Journal Article
  17. 17

    Effect of grain boundaries on hot-carrier induced degradation in large grain polysilicon thin-film transistors by Dimitriadis, C.A, Kimura, M, Miyasaka, M, Inoue, S, Farmakis, F.V, Brini, J, Kamarinos, G

    Published in Solid-state electronics (01-11-2000)
    “…Hot-carrier effects have been investigated in n-channel thin-film transistors fabricated on large grain polysilicon films. The bias-stress conditions for…”
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    Journal Article
  18. 18

    Elucidation of the influence of operating temperature in LiNi0.8Co0.15Al0.05O2/silicon and LiNi0.8Co0.15Al0.05O2/graphite pouch cells batteries cycle-life degradation by Farmakis, F., de Meatza, I., Subburaj, T., Tsiplakides, D., Argyropoulos, D.-P., Balomenou, S., Landa-Medrano, I., Eguia-Barrio, A., Strataki, N., Nestoridi, M.

    Published in Journal of energy storage (01-09-2021)
    “…•Direct comparison between LiNi0.8Co0.15Al0.05O2/silicon and LiNi0.8Co0.15Al0.05O2/graphite pouch cells at 5, 25 and 35 oC operation.•Silicon-anode pouch cells…”
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    Journal Article
  19. 19

    Effects of hydrogenation on the performance and stability of p-channel polycrystalline silicon thin-film transistors by Hastas, N.A., Dimitriadis, C.A., Farmakis, F.V., Kamarinos, G.

    Published in Microelectronics and reliability (01-04-2003)
    “…The effects of hydrogenation on the performance and stability under electrical stress of p-channel polycrystalline silicon thin-film transistors (polysilicon…”
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    Journal Article
  20. 20

    Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs) by Farmakis, F.V., Brini, J., Kamarinos, G., Dimitriadis, C.A., Gueorguiev, V.K., Ivanov, Tz.E.

    Published in Microelectronics and reliability (1999)
    “…Leakage current evolution during two different modes of electrical stressing in hydrogenated-undoped n-channel polysilicon thin film transistors (TFTs) is…”
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    Journal Article