Search Results - "Faralli, Nicolas"

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors by Marino, F.A., Faralli, N., Palacios, T., Ferry, D.K., Goodnick, S.M., Saraniti, M.

“…This brief aims to show the effects of threading edge dislocations on the DC and RF performance of GaN high-electron mobility transistor (HEMT) devices. A…”
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Emerging N-Face GaN HEMT Technology: A Cellular Monte Carlo Study by Marino, Fabio Alessio, Saraniti, Marco, Faralli, Nicolas, Ferry, David K, Goodnick, Stephen M, Guerra, Diego

“…This paper aims to investigate the potential of the emerging N-face technology with respect to both the direct current and radio frequency performance of GaN…”
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Comparison of N- and Ga-Face GaN HEMTs Through Cellular Monte Carlo Simulations by Guerra, D, Saraniti, M, Faralli, N, Ferry, D K, Goodnick, S M, Marino, F A

“…We compare the performance of GaN HEMT devices based on the established Ga-face technology and the emerging N-face technology. Starting from a state-of-the-art…”
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The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length by Akis, R., Ayubi-Moak, J.S., Faralli, N., Ferry, D.K., Goodnick, S.M., Saraniti, M.

“…Ultrashort gate-length pseudomorphic high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. The RF response and…”
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Effects of Threading Dislocations on AIGaN/GaN High-Electron Mobility Transistors by ALESSIO MARINO, Fabio, FARALLI, Nicolas, PALACIOS, Tomás, FERRY, David K, GOODNICK, Stephen M, SARANITI, Marco

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Ballistic Transport in InP-Based HEMTs by Akis, R., Faralli, N., Ferry, D.K., Goodnick, S.M., Phatak, K.A., Saraniti, M.

“…Ballistic transport has been of interest in semiconductor devices for quite some time, and its effect has been used to predict quite-different device…”
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Advanced algorithmic techniques for cellular Monte Carlo simulation by Faralli, Nicolas

“…The general trend in the electronics industry to increase the density of integrated circuits leads to the reduction of the size of Si transistors to their…”
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Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT by Vitobello, Fabio, Faralli, Nicolas, Yamakawa, Shinya, Goodnick, Stephen M., Saraniti, Marco

“…In this work, we present a full band Monte Carlo simulation of the effects of dislocation scattering on the performance of a 0.25 μm AlGaN/GaN HEMT (high…”
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Advanced algorithmic techniques for cellular Monte Carlo simulation by Faralli, Nicolas

“…The general trend in the electronics industry to increase the density of integrated circuits leads to the reduction of the size of Si transistors to their…”
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Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors by Faralli, Nicolas, Markandeya, Himanshu, Branlard, Julien, Saraniti, Marco, Goodnick, Stephen M., Ferry, David K.

“…In this work, Indium Antimonide (InSb) quantum well transistors are investigated using full-band Cellular Monte Carlo simulations. Both Depletion and…”
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