Search Results - "Fang, Yahao"

  • Showing 1 - 2 results of 2
Refine Results
  1. 1

    Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM by Sun, Qian, Chi, Yaqing, Guo, Yang, Liang, Bin, Tao, Ming, Wu, Zhenyu, Guo, Hongxia, Zheng, Qiwen, Chen, Wangyong, Gao, Yulin, Zhao, Peixiong, Li, Xingji, Chen, Jianjun, Luo, Deng, Sun, Hanhan, Fang, Yahao

    Published in Applied physics letters (08-07-2024)
    “…This paper discusses the stuck bits induced by the gate breakdown of PMOS in the sub-20 nm FinFET static random access memory (SRAM) device. After the…”
    Get full text
    Journal Article
  2. 2