Search Results - "Fan, Dingxun"

Quantum confinement of the Dirac surface states in topological-insulator nanowires by Münning, Felix, Breunig, Oliver, Legg, Henry F., Roitsch, Stefan, Fan, Dingxun, Rößler, Matthias, Rosch, Achim, Ando, Yoichi

“…The non-trivial topology of three-dimensional topological insulators dictates the appearance of gapless Dirac surface states. Intriguingly, when made into a…”
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Giant magnetochiral anisotropy from quantum-confined surface states of topological insulator nanowires by Legg, Henry F., Rößler, Matthias, Münning, Felix, Fan, Dingxun, Breunig, Oliver, Bliesener, Andrea, Lippertz, Gertjan, Uday, Anjana, Taskin, A. A., Loss, Daniel, Klinovaja, Jelena, Ando, Yoichi

“…Wireless technology relies on the conversion of alternating electromagnetic fields into direct currents, a process known as rectification. Although rectifiers…”
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Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxy by Wang, L. B., Guo, J. K., Kang, N., Pan, Dong, Li, Sen, Fan, Dingxun, Zhao, Jianhua, Xu, H. Q.

“…We report low-temperature magnetotransport studies of individual InAs nanowires grown by molecule beam epitaxy. At low magnetic fields, the magnetoconductance…”
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Strongly Coupled High-Quality Graphene/2D Superconducting Mo2C Vertical Heterostructures with Aligned Orientation by Xu, Chuan, Song, Shuang, Liu, Zhibo, Chen, Long, Wang, Libin, Fan, Dingxun, Kang, Ning, Ma, Xiuliang, Cheng, Hui-Ming, Ren, Wencai

“…Vertical heterostructures of two-dimensional (2D) crystals have led to the observations of numerous exciting physical phenomena and presented the possibilities…”
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Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets by Kang, Ning, Fan, Dingxun, Zhi, Jinhua, Pan, Dong, Li, Sen, Wang, Cheng, Guo, Jingkun, Zhao, Jianhua, Xu, Hongqi

“…Low-dimensional narrow band gap III–V compound semiconductors, such as InAs and InSb, have attracted much attention as one of promising platforms for studying…”
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Top-Down Fabrication of Bulk-Insulating Topological Insulator Nanowires for Quantum Devices by Rößler, Matthias, Fan, Dingxun, Münning, Felix, Legg, Henry F., Bliesener, Andrea, Lippertz, Gertjan, Uday, Anjana, Yazdanpanah, Roozbeh, Feng, Junya, Taskin, Alexey, Ando, Yoichi

“…In a nanowire (NW) of a three-dimensional topological insulator (TI), the quantum confinement of topological surface states leads to a peculiar sub-band…”
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Supercurrent and Multiple Andreev Reflections in InSb Nanosheet SNS Junctions by Zhi, Jinhua, Kang, Ning, Li, Sen, Fan, Dingxun, Su, Feifan, Pan, Dong, Zhao, Shiping, Zhao, Jianhua, Xu, Hongqi

“…In this study, the realization of mesoscopic Josephson junctions based on free‐standing InSb nanosheet grown by molecular‐beam epitaxy is reported. Below the…”
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Strongly Coupled High-Quality Graphene/2D Superconducting Mo 2 C Vertical Heterostructures with Aligned Orientation by Xu, Chuan, Song, Shuang, Liu, Zhibo, Chen, Long, Wang, Libin, Fan, Dingxun, Kang, Ning, Ma, Xiuliang, Cheng, Hui-Ming, Ren, Wencai

“…Vertical heterostructures of two-dimensional (2D) crystals have led to the observations of numerous exciting physical phenomena and presented the possibilities…”
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Top-down fabrication of bulk-insulating topological insulator nanowires for quantum devices by Rößler, Matthias, Fan, Dingxun, Münning, Felix, Legg, Henry F, Bliesener, Andrea, Lippertz, Gertjan, Uday, Anjana, Yazdanpanah, Roozbeh, Feng, Junya, Taskin, Alexey A, Ando, Yoichi

“…In a nanowire (NW) of a three-dimensional topological insulator (TI), the quantum-confinement of topological surface states leads to a peculiar subband…”
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Giant magnetochiral anisotropy from quantum confined surface states of topological insulator nanowires by Legg, Henry F, Rößler, Matthias, Münning, Felix, Fan, Dingxun, Breunig, Oliver, Bliesener, Andrea, Lippertz, Gertjan, Uday, Anjana, Taskin, A. A, Loss, Daniel, Klinovaja, Jelena, Ando, Yoichi

“…Nature Nanotechnology (2022) Wireless technology relies on the conversion of alternating electromagnetic fields to direct currents, a process known as…”
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Quantum confinement of the Dirac surface states in topological-insulator nanowires by Münning, Felix, Breunig, Oliver, Legg, Henry F, Roitsch, Stefan, Fan, Dingxun, Rößler, Matthias, Rosch, Achim, Ando, Yoichi

“…Nat Commun 12, 1038 (2021) The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface…”
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Schottky barrier and contact resistance of InSb nanowire field effect transistors by Fan, Dingxun, Kang, N, Ghalamestani, Sepideh Gorji, Dick, Kimberly A, Xu, H Q

“…Nanotechnology 27, 275204 (2016) Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a…”
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Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets by Pan, Dong, Fan, Dingxun, Kang, Ning, Zhi, Jinhua, Yu, Xuezhe, Xu, Hongqi, Zhao, Jianhua

“…Nano Letters, 16, 2016, 834-841 Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are…”
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Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy by Fan, Dingxun, Li, Sen, Kang, N, Caroff, Philippe, Wang, L. B, Huang, Y. Q, Deng, M. T, Yu, C. L, Xu, H. Q

“…Nanoscale 7, 14822 (2015) We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular…”
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