Search Results - "Falta, J"

Growth and Morphology of Ceria on Ruthenium (0001) by Kaemena, B, Senanayake, S. D, Meyer, A, Sadowski, J. T, Falta, J, Flege, J. I

“…Cerium oxide plays an important role in catalysis due to its prominent ability to store, transport, and release oxygen. Inverse model catalysts have attracted…”
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Growth mode and oxidation state analysis of individual cerium oxide islands on Ru(0001) by Flege, J.I., Kaemena, B., Senanayake, S.D., Höcker, J., Sadowski, J.T., Falta, J.

“…The growth of cerium oxide on Ru(0001) by reactive molecular beam epitaxy has been investigated using low-energy electron microscopy (LEEM) and diffraction as…”
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Nanoscale analysis of the oxidation state and surface termination of praseodymium oxide ultrathin films on ruthenium(0001) by Flege, J.I., Krisponeit, J.-O., Höcker, J., Hoppe, M., Niu, Y., Zakharov, A., Schaefer, A., Falta, J., Krasovskii, E.E.

“…•The local structure and chemistry of praseodymium oxide ultrathin films grown epitaxially on ruthenium(0001) are analyzed by intensity-voltage low-energy…”
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Ultra-thin high-quality silicon nitride films on Si(111) by Falta, J, Schmidt, Th, Gangopadhyay, S, Clausen, T, Brunke, O, Flege, J. I, Heun, S, Bernstorff, S, Gregoratti, L, Kiskinova, M

“…Ultra-thin silicon nitride films grown by exposure of Si(111) substrates to a flux of atomic nitrogen at temperatures between 700 °C and 1050 °C have been…”
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Alignment of Ge nanoislands on Si(111) by Ga-induced substrate self-patterning by Schmidt, Th, Flege, J I, Gangopadhyay, S, Clausen, T, Locatelli, A, Heun, S, Falta, J

“…A novel mechanism is described which enables the selective formation of three-dimensional Ge islands. Submonolayer adsorption of Ga on Si(111) at high…”
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Complementary information on CdSe/ZnSe quantum dot local structure from extended X-ray absorption fine structure and diffraction anomalous fine structure measurements by Piskorska-Hommel, E., Holý, V., Caha, O., Wolska, A., Gust, A., Kruse, C., Kröncke, H., Falta, J., Hommel, D.

“…The extended X-ray absorption fine structure (EXAFS) and diffraction anomalous fine structure (DAFS) have been applied to investigate a local structure for the…”
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Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures by Krause, B., Miljevic, B., Aschenbrenner, T., Piskorska-Hommel, E., Tessarek, C., Barchuk, M., Buth, G., Donfeu Tchana, R., Figge, S., Gutowski, J., Hänschke, D., Kalden, J., Laurus, T., Lazarev, S., Magalhaes-Paniago, R., Sebald, K., Wolska, A., Hommel, D., Falta, J., Holý, V., Baumbach, T.

“…•Composition and strain of two InGaN phases formed by spinodal decomposition.•The phases could be attributed to morphological features.•The well-ordered GaN…”
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Surfactant-mediated epitaxy of Ge on Si(111): Beyond the surface by Schmidt, Th, Kröger, R., Clausen, T., Falta, J., Janzen, A., Kammler, M., Kury, P., Zahl, P., Horn-von Hoegen, M.

“…For a characterization of interface and "bulk" properties of Ge films grown on Si(111) by Sb surfactant-mediated epitaxy, grazing incidence x-ray diffraction…”
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Cleaning and growth morphology of GaN and InGaN surfaces by Falta, J., Schmidt, Th, Gangopadhyay, S., Schulz, Chr, Kuhr, S., Berner, N., Flege, J. I., Pretorius, A., Rosenauer, A., Sebald, K., Lohmeyer, H., Gutowski, J., Figge, S., Yamaguchi, T., Hommel, D.

“…The structure and chemistry of clean GaN surfaces and InGaN thin films and nanostructures grown by metal organic vapour pressure epitaxy (MOVPE) has been…”
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Growth of praseodymium oxide on Si(111) under oxygen-deficient conditions by Schaefer, A., Zielasek, V., Schmidt, Th, Sandell, A., Schowalter, M., Seifarth, O., Walle, L. E., Schulz, Ch, Wollschläger, J., Schroeder, T., Rosenauer, A., Falta, J., Bäumer, M.

“…Surface science studies of thin praseodymium oxide films grown on silicon substrates are of high interest in view of applications in such different fields as…”
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Mg and Si dopant incorporation and segregation in GaN by Schmidt, Th, Siebert, M., Flege, J. I., Figge, S., Gangopadhyay, S., Pretorius, A., Lee, T.-L., Zegenhagen, J., Gregoratti, L., Barinov, A., Rosenauer, A., Hommel, D., Falta, J.

“…The surface segregation of Mg and Si dopant species and their atomic incorporation sites in GaN films grown by metal‐organic vapour phase epitaxy (MOVPE) on…”
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Ordering of copper phthalocyanine films on functionalized Si(111) by Schmidt, Th, Wilkens, T., Falta, J.

“…•Well-ordered CuPc films can be grown on Ag passivated Si(111) surfaces.•Smooth morphology is achieved already for room temperature deposition.•High-resolution…”
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Silver: a novel growth catalyst for Ge nanoislands on Si(113) by Speckmann, M., Schmidt, Th, Locatelli, A., Menteş, T. O., Niño, M. Á., Falta, J.

“…The impact of silver pre‐adsorption on germanium growth on Si(113) was investigated using in‐situ low‐energy electron microscopy (LEEM) as well as low‐energy…”
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Less strain energy despite fewer misfit dislocations: the impact of ordering by Schmidt, Th, Kröger, R, Flege, J I, Clausen, T, Falta, J, Janzen, A, Zahl, P, Kury, P, Kammler, M, Horn-von Hoegen, M

“…The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation…”
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From nanoislands to nanowires: Growth of germanium on gallium-terminated silicon surfaces by Schmidt, Th, Flege, J. I., Speckmann, M., Clausen, T., Gangopadhyay, S., Locatelli, A., Mentes, T. O., Heun, S., Guo, F. Z., Sutter, P., Falta, J.

“…The influence of Ga pre‐adsorption on Si(111), Si(113) and Si(112) surfaces on Ge growth has been investigated by low‐energy electron diffraction and…”
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Local structure of uncapped and capped InGaN/GaN quantum dots by Piskorska-Hommel, E., Schmidt, Th, Siebert, M., Yamaguchi, T., Hommel, D., Falta, J., Cross, J. O.

“…The local structure around the indium atoms in uncapped and capped InxGa1−xN quantum dots has been studied by In K‐edge extended X‐ray absorption fine…”
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Ordering and shape of self-assembled InAs quantum dots on GaAs(001) by Zhang, K., Heyn, Ch, Hansen, W., Schmidt, Th, Falta, J.

“…Quantitative grazing-incidence small-angle x-ray scattering experiments have been performed on self-assembled InAs quantum dots (QDs) grown by molecular-beam…”
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Bi: Perfect surfactant for Ge growth on Si(111)? by Schmidt, T., Falta, J., Materlik, G., Zeysing, J., Falkenberg, G., Johnson, R. L.

“…We have investigated the growth of Ge on Bi-terminated Bi:Si(111)-∛×∛. In-situ measurements of x-ray standing waves, crystal truncation rods and scanning…”
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Strain as driving force for interface roughening of δ-doping layers by Falta, J.

“…The growth of smooth and abrupt heteroepitaxial semiconductor interfaces is limited by strain originating from the lattice mismatch of the different materials…”
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Correlated stacks of CdSe/ZnSSe quantum dots by Schmidt, Th, Clausen, T., Falta, J., Alexe, G., Passow, T., Hommel, D., Bernstorff, S.

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