Search Results - "Fallica, P."

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    Electroluminescence of silicon nanocrystals in MOS structures by FRANZO, G, IRRERA, A, MOREIRA, E. C, MIRITELLO, M, IACONA, F, SANFILIPPO, D, DI STEFANO, G, FALLICA, P. G, PRIOLO, F

    “…We have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a substoichiometric SiOx (x<2) thin…”
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    Journal Article
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    Multiparametric approach to the assessment of muon tomographic results for the inspection of a full-scale container by Riggi, F., Bandieramonte, M., Becciani, U., Bonanno, D. L., Bonanno, G., Fallica, P. G., Gallo, G., Grillo, A., La Rocca, P., Lo Presti, D., Petta, C., Pinto, C., Riggi, S., Romeo, G., Russo, G. V., Santagati, G., Valvo, G.

    Published in European physical journal plus (01-01-2021)
    “…Experimental results from a dataset collected with a full-scale muon tomograph for the inspection of cargo containers were studied in a single scattering…”
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    Journal Article
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    Excitation and de-excitation properties of silicon quantum dots under electrical pumping by Irrera, A., Pacifici, D., Miritello, M., Franzò, G., Priolo, F., Iacona, F., Sanfilippo, D., Di Stefano, G., Fallica, P. G.

    Published in Applied physics letters (02-09-2002)
    “…In this work, the stationary and time-resolved electroluminescence (EL) properties of Si quantum dots embedded within a metal–oxide–semiconductor device are…”
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    Journal Article
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    Timing properties measurements of STMicroelectronics silicon photomultipliers for PET scanners by Sanfilippo, D., Fallica, P.G., Carbone, B., Mazzillo, M., Piana, A., Valvo, G., La Rocca, P., Riggi, F.

    “…Preliminary results concerning the study of timing and energy resolution properties of recent Silicon Photomultipliers (SiPMs) devices by STMicroelectronics…”
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    Journal Article
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    A pixelated silicon telescope for solid state microdosimetry by Agosteo, S., Fallica, P.G., Fazzi, A., Introini, M.V., Pola, A., Valvo, G.

    Published in Radiation measurements (01-02-2008)
    “…A solid state microdosimeter consisting of a matrix of cylindrical Δ E elements of micrometric size implanted on a single E stage is discussed in this work…”
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    Journal Article Conference Proceeding
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    Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices by Iacona, F., Pacifici, D., Irrera, A., Miritello, M., Franzò, G., Priolo, F., Sanfilippo, D., Di Stefano, G., Fallica, P. G.

    Published in Applied physics letters (21-10-2002)
    “…The electroluminescence (EL) properties of Er-doped Si nanoclusters (NC) embedded in metal–oxide–semiconductor devices are investigated. Due to the presence of…”
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    Journal Article
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    Light emitting devices based on silicon nanostructures by Irrera, A., Franzò, G., Iacona, F., Canino, A., Di Stefano, G., Sanfilippo, D., Piana, A., Fallica, P.G., Priolo, F.

    “…In this paper, we summarize the results of an extensive investigation on the properties of MOS-type light emitting devices based on silicon nanostructures. The…”
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    Journal Article Conference Proceeding
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    A feasibility study of a solid-state microdosimeter by Agosteo, S., Fallica, P.G., Fazzi, A., Pola, A., Valvo, G., Zotto, P.

    Published in Applied radiation and isotopes (01-11-2005)
    “…A solid-state silicon detector is a challenging device for microdosimetry, mainly because it can provide sensitive zones of the order of a micrometer…”
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    Journal Article
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    Correlation between electroluminescence and structural properties of Si nanoclusters by Irrera, A., Iacona, F., Franzò, G., Boninelli, S., Pacifici, D., Miritello, M., Spinella, C., Sanfilippo, D., Di Stefano, G., Fallica, P.G., Priolo, F.

    Published in Optical materials (01-02-2005)
    “…We have studied the electrical and optical properties of light emitting MOS devices based on Si nanostructures. In these devices the dielectric layer consists…”
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    Journal Article Conference Proceeding
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    Single photoelectron time resolution (SPTR) of silicon photomultipliers (SiPMs) with large sensitive area by Ronzhin, A., Los, S., Murat, P., Ramberg, E., Kim, H., Chen, C., Kao, C., Mazzillo, M., Carbone, B., Fallica, P., Piana, A., Sanfilippo, D., Valvo, G., Zatserklyaniy, A., Ritt, S.

    “…We continue Fermilab program to study timing properties of SiPMs. SPTR for SiPMs with large sensitive area were measured and results are presented…”
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    Conference Proceeding
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    Electroluminescence properties of light emitting devices based on silicon nanocrystals by Irrera, A., Pacifici, D., Miritello, M., Franzo, G., Priolo, F., Iacona, F., Sanfilippo, D., Di Stefano, G., Fallica, P.G.

    “…We have fabricated MOS devices where the dielectric layer consists of a substoichiometric SiO x (x<2) thin film, annealed at 1100°C for 1 h to induce the…”
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    Journal Article
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    Production and tests of very high breakdown voltage silicon detectors by Borrello, L., Bernardini, J., Dell'Orso, R., Dutta, S., Fallica, P.G., Giassi, A., Messineo, A., Militaru, O., Segneri, G., Starodumov, A., Teodorescu, L., Tonelli, G., Valvo, G., Verdini, P.G.

    Published in IEEE transactions on nuclear science (01-06-2002)
    “…The paper reports the results of a joint R&D project between INFN Pisa and STMicroelectronics aiming at the development of silicon micro-strip detectors with…”
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    Journal Article
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    Silicon photomultiplier device architecture with dark current improved to the ultimate physical limit by Pagano, R., Valvo, G., Sanfilippo, D., Libertino, S., Corso, D., Fallica, P. G., Lombardo, S.

    Published in Applied physics letters (06-05-2013)
    “…This paper describes a silicon photomultiplier device architecture achieving the ultimate physical limit of the dark count level. Two different structures are…”
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    Journal Article