High-temperature CVD for crystalline-silicon thin-film solar cells

High-temperature CVD for crystalline-silicon thin-film solar cells

The fundamentals of thermal CVD for the deposition of silicon at high temperatures are briefly discussed and applied to the conditions in the CVD system that we have constructed and characterized. Our system fulfils basic requirements to be met for solar cell application; solar cells made from epita...

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 46; no. 10; pp. 2048 - 2054
Main Authors: Faller, F.R., Hurrle, A.
Format: Journal Article
Language:English
Published: United States IEEE 01-10-1999
Subjects:
CHEMICAL VAPOR DEPOSITION
Construction costs
Crystal structure
Deposition
Economics
FABRICATION
MATERIALS SCIENCE
Photovoltaic cells
Silicon
SILICON SOLAR CELLS
Solar cells
SOLAR ENERGY
THIN FILMS
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Description
Summary:The fundamentals of thermal CVD for the deposition of silicon at high temperatures are briefly discussed and applied to the conditions in the CVD system that we have constructed and characterized. Our system fulfils basic requirements to be met for solar cell application; solar cells made from epitaxial layers on various substrates were fabricated. The high-quality cells achieved 17.6% efficiency proving the excellent performance of our system, the cells on economically relevant substrates achieved 8% efficiency which still needs improvement.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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German Ministry of Education and Science
European Commission (EC)
ISSN:0018-9383
1557-9646
DOI:10.1109/16.791995