Search Results - "Faccio, F."

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  1. 1

    Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs by Faccio, F., Michelis, S., Cornale, D., Paccagnella, A., Gerardin, S.

    Published in IEEE transactions on nuclear science (01-12-2015)
    “…The behavior of transistors in commercial-grade complementary metal-oxide semiconductor technologies in the 65 and 130 nm nodes has been explored up to a total…”
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    Journal Article
  2. 2

    Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications by Termo, G., Borghello, G., Faccio, F., Michelis, S., Koukab, A., Sallese, J.M.

    “…The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to…”
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    Journal Article
  3. 3

    Radiation-induced edge effects in deep submicron CMOS transistors by Faccio, F., Cervelli, G.

    Published in IEEE transactions on nuclear science (01-12-2005)
    “…The study of the TID response of transistors and isolation test structures in a 130 nm commercial CMOS technology has demonstrated its increased radiation…”
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    Journal Article
  4. 4

    The psychometric properties of the Italian adaptation of the Health Orientation Scale (HOS) by Masiero, M, Oliveri, S, Cutica, I, Monzani, D, Faccio, F, Mazzocco, K, Pravettoni, G

    Published in Health and quality of life outcomes (13-03-2020)
    “…A novel approach suggested that cognitive and dispositional features may explain in depth the health behaviors adoption and the adherence to prevention…”
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    Journal Article
  5. 5

    Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs by Gerardin, S., Bagatin, M., Cornale, D., Ding, L., Mattiazzo, S., Paccagnella, A., Faccio, F., Michelis, S.

    Published in IEEE transactions on nuclear science (01-12-2015)
    “…We studied device-to-device variations as a function of total dose in MOSFETs, using specially designed test structures and procedures aimed at maximizing…”
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    Journal Article
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    Total Ionizing Dose effects in 130-nm commercial CMOS technologies for HEP experiments by Gonella, L., Faccio, F., Silvestri, M., Gerardin, S., Pantano, D., Re, V., Manghisoni, M., Ratti, L., Ranieri, A.

    “…The impact of foundry-to-foundry variability and bias conditions during irradiation on the Total Ionizing Dose (TID) response of commercial 130-nm CMOS…”
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    Journal Article
  8. 8

    Optimization of Shielded PCB Air-Core Toroids for High-Efficiency DC-DC Converters by Orlandi, S., Allongue, B. A., Blanchot, G., Buso, S., Faccio, F., Fuentes, C. A., Kayal, M., Michelis, S., Spiazzi, G.

    Published in IEEE transactions on power electronics (01-07-2011)
    “…The paper describes the design of optimized printed circuit board (PCB) air-core toroids for high-frequency dc-dc converters with strict requirements in terms…”
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  9. 9

    Computational method to estimate Single Event Upset rates in an accelerator environment by Huhtinen, M, Faccio, F

    “…We present a new method to estimate Single Event Upsets (SEU) in a hadron accelerator environment, which is characterized by a complicated radiation spectrum…”
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  10. 10

    Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects by Anelli, G., Campbell, M., Delmastro, M., Faccio, F., Floria, S., Giraldo, A., Heijne, E., Jarron, P., Kloukinas, K., Marchioro, A., Moreira, P., Snoeys, W.

    Published in IEEE transactions on nuclear science (01-12-1999)
    “…We discuss design issues related to the extensive use of Enclosed Layout Transistors (ELT's) and guard rings in deep submicron CMOS technologies in order to…”
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    Journal Article
  11. 11

    Degradation Induced by X-Ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout by Silvestri, M., Gerardin, S., Paccagnella, A., Faccio, F.

    Published in IEEE transactions on nuclear science (01-12-2008)
    “…We present new experimental results about channel hot carrier degradation of enclosed layout transistors as a function of previous accumulated total ionizing…”
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    Journal Article
  12. 12

    Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC by Pezzotta, A., Zhang, C.-M, Jazaeri, F., Bruschini, C., Borghello, G., Faccio, F., Mattiazzo, S., Baschirotto, A., Enz, C.

    “…The Large Hadron Collider (LHC) running at CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of GigaRad Total…”
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    Conference Proceeding
  13. 13

    Optimization of DC-DC Converters for Improved Electromagnetic Compatibility With High Energy Physics Front-End Electronics by Fuentes, C., Allongue, B., Blanchot, G., Faccio, F., Michelis, S., Orlandi, S., Pontt, J., Rodriguez, J., Kayal, M.

    Published in IEEE transactions on nuclear science (01-08-2011)
    “…The upgrade of the Large Hadron Collider (LHC) experiments at CERN sets new challenges for the powering of the detectors. One of the powering schemes under…”
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    Journal Article
  14. 14

    Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs by Silvestri, M., Gerardin, S., Paccagnella, A., Faccio, F., Gonella, L.

    Published in IEEE transactions on nuclear science (01-08-2008)
    “…We investigate how X-ray exposure impact the long term reliability of 130-nm NMOSFETs as a function of device geometry and irradiation bias conditions. This…”
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    Journal Article
  15. 15

    FEAST2: A Radiation and Magnetic Field Tolerant Point-of-Load Buck DC/DC Converter by Faccio, F., Blanchot, G., Fuentes, C., Michelis, S., Orlandi, S., Saggini, S., Troyano, I.

    “…In view of application in upgraded particles detectors at the LHC accelerator, CERN has developed a radiation and magnetic field tolerant 10W Point-Of-Load…”
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    Conference Proceeding
  16. 16

    Radiation Effects on the 1/f Noise of Field-Oxide Field Effect Transistors by Zhou, X.J., Fleetwood, D.M., Schrimpf, R.D., Faccio, F., Gonella, L.

    Published in IEEE transactions on nuclear science (01-12-2008)
    “…Low-frequency (1/ f ) noise measurements were performed at room temperature as a function of gate bias on field-oxide field effect transistors (FOXFETs) that…”
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    Journal Article
  17. 17

    The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays by Silvestri, M., Gerardin, S., Schrimpf, R.D., Fleetwood, D.M., Faccio, F., Paccagnella, A.

    Published in IEEE transactions on nuclear science (01-12-2009)
    “…We have investigated the effects of biased and unbiased X-ray irradiation on the subsequent time-dependent dielectric breakdown (TDDB) of 130-nm MOSFETs…”
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    Journal Article
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    The intensity of PSMA intraprostatic uptake as a predictor of clinically significant prostate cancer by Bergero, Miguel A, Costa, Lucas, Modina, Patricio, Carlos, David, Arceluz, María J, Faccio, Fernando F

    Published in Medicina (01-12-2022)
    “…Positron emission tomography (PET) with prostate-specific membrane antigen (PSMA) improves prostate cancer staging. Furthermore, the intensity of…”
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    Journal Article
  20. 20

    Optical readout and control systems for the CMS tracker by Troska, J., Cervelli, G., Faccio, F., Gill, K., Grabit, R., Jareno, R.M., Sandvik, A.M., Vasey, F.

    Published in IEEE transactions on nuclear science (01-08-2003)
    “…The Compact Muon Solenoid (CMS) Experiment will be installed at the CERN Large Hadron Collider (LHC) in 2007. The readout system for the CMS Tracker consists…”
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    Journal Article