Search Results - "FULIN XIONG"

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  1. 1

    Pulsed laser deposition of amorphous diamond-like carbon films with ArF (193 nm) excimer laser by Xiong, Fulin, Wang, Y.Y., Leppert, V., Chang, R.P.H.

    Published in Journal of materials research (01-09-1993)
    “…We have deposited hydrogen-free diamond-like amorphous carbon films by ArF (193 nm) pulsed laser ablation of graphite. The deposition process is performed with…”
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    Journal Article
  2. 2

    Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces by Ong, T.P., Xiong, Fulin, Chang, R.P.H., White, C.W.

    Published in Journal of materials research (01-09-1992)
    “…The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD)…”
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    Journal Article
  3. 3

    Laser ablated coatings on ceramic fibers for ceramic matrix composites by Huang, Chao M., Xu, Youren, Xiong, Fulin, Zangvil, Avigdor, Kriven, Waltraud M.

    “…The newly developed pulsed excimer laser ablation (PELA) thin film coating technique was applied to coating ceramic fibers for ceramic matrix composite…”
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    Journal Article
  4. 4

    High efficiency single quantum well graded-index separate-confinement heterostructure lasers fabricated with MeV oxygen ion implantation by FULIN XIONG, TOMBRELLO, T. A, WANG, H, CHEN, T. R, CHEN, H. Z, MORKOC, H, YARIV, A

    Published in Applied physics letters (20-02-1989)
    “…Single quantum well AlGaAs/GaAs graded-index separate-confinement heterostructure lasers have been fabricated using MeV oxygen ion implantation plus optimized…”
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    Journal Article
  5. 5

    Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature by FULIN XIONG, GANZ, E, LOESER, A. G, GOLOVCHENKO, J. A, SPAEPEN, F

    Published in Applied physics letters (30-12-1991)
    “…We demonstrate liquid-metal-mediated homoepitaxial crystal growth of Ge on Ge(111) at temperatures in the range of 400–450 °C. Crystal growth proceeds by…”
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    Journal Article
  6. 6

    MeV oxygen ion implantation induced compositional intermixing in AlAs/GaAs superlattices by FULIN XIONG, TOMBRELLO, T. A, SCHWARTZ, C. L, SCHWARZ, S. A

    Published in Applied physics letters (27-08-1990)
    “…We present in this letter an investigation of compositional intermixing in AlAs/GaAs superlattices induced by 2 MeV oxygen ion implantation. The results are…”
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    Journal Article
  7. 7
  8. 8

    Complex dielectric function of amorphous diamond films deposited by pulsed-excimer-laser ablation of graphite by FULIN XIONG, WANG, Y. Y, CHANG, R. P. H

    Published in Physical review. B, Condensed matter (15-09-1993)
    “…Amorphous diamond films have been synthesized by pulsed excimer- (ArF)-laser ablation of graphite at room temperature. Detailed studies of the energy-dependent…”
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    Journal Article
  9. 9

    Characterization and application of MeV ion-implanted layers in III-V compound semiconductors by Xiong, Fulin

    “…Ion implantation at keV energies has become a well-established technique for surface modification of solid materials, especially semiconductors. The technique…”
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    Dissertation
  10. 10

    Short term therapeutic effect on treatment of postoperational large intestine carcinoma by Fupiyiwei decoction combined with chemotherapy and it's effect on immune function by Wu, Guolin, Yu, Guoyou, Li, Jianping, Xiong, Fulin

    Published in Zhongguo zhongyao zazhi (01-03-2010)
    “…To investigate short term clinical therapeutic effect of fupiyiwei decoction (FPYWD) combined with chemotherapy in treating postoperational large intestine…”
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    Journal Article
  11. 11

    Characterization and application of MeV ion-implanted layers in III-V compound semiconductors by Xiong, Fulin

    Published 01-01-1990
    “…Ion implantation at keV energies has become a well-established technique for surface modification of solid materials, especially semiconductors. The technique…”
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    Dissertation
  12. 12

    Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon by Ong, T. P., Xiong, Fulin, Chang, R. P. H., White, C. W.

    Published in Applied physics letters (27-04-1992)
    “…The nucleation and growth of diamond crystals on single-crystal copper surfaces implanted with carbon ions is studied. Microwave plasma-enhanced chemical-vapor…”
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    Journal Article
  13. 13

    The effect of nitrogen on pulsed laser deposition of amorphous silicon carbide films: Properties and structure by Yee, Andrew L., Ong, H. C., Xiong, Fulin, Chang, R. P. H.

    Published in Journal of materials research (01-08-1996)
    “…The influence of nitrogen on amorphous silicon carbide films deposited at room temperature using pulsed laser ablation has been investigated. Depositions were…”
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    Journal Article
  14. 14
  15. 15

    Pulsed excimer laser deposition of potassium titanyl phosphate films by Xiong, Fulin, Chang, R. P. H., Hagerman, M. E., Kozhevnikov, V. L., Poeppelmeier, K. R., Zhou, Haitain, Wong, G. K., Ketterson, J. B., White, C. W.

    Published in Applied physics letters (10-01-1994)
    “…Nonlinear optical thin films of potassium titanyl phosphate (KTP) have been successfully fabricated by pulsed excimer laser deposition on substrates of…”
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    Journal Article
  16. 16

    MILD Combustion for Hydrogen and Syngas at Elevated Pressures by Huang, Mingming, Zhang, Zhedian, Shao, Weiwei, Xiong, Yan, Lei, Fulin, Xiao, Yunhan

    Published in Journal of thermal science (01-02-2014)
    “…As gas recirculation constitutes a fundamental condition for the realization of MILD combustion, it is necessary to determine gas recirculation ratio before…”
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    Journal Article
  17. 17

    Deposition of nonlinear optical films of potassium titanyl phosphate (KTiOPO4) by pulsed excimer laser ablation by Xiong, Fulin, Hagerman, M., Zhou, H., Kozhevnikov, V., Wong, G. K., Poeppelmeier, K., Ketterson, J. B., Chang, R. P. H., White, C. W.

    “…Nonlinear optical films of potassium titanyl phosphate (KTiOPO4, or KTP) have been, for the first time, fabricated by pulsed excimer laser deposition on…”
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    Conference Proceeding Journal Article
  18. 18
  19. 19

    Direct determination of Al content in molecular‐beam epitaxially grown Al x Ga1−x As (0≤x≤1) by nuclear resonant reaction analysis and x‐ray rocking curve techniques by Xiong, Fulin, Tombrello, T. A., Chen, H. Z., Morkoç, H., Yariv, A.

    “…The techniques of nuclear resonant reaction analysis (NRRA) using 2 7Al(p,γ)2 8Si and x‐ray rocking curve (XRC) based on double‐crystal diffractometry have…”
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    Journal Article