Search Results - "FUKUDA, YUKIO"
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Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation
Published in Applied physics letters (11-07-2011)“…We have investigated GeNx/Ge interface properties using Si3N4(7 nm)/GeNx(2 nm)/Ge metal-insulator-semiconductor structures fabricated by the plasma nitridation…”
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Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-03-2016)“…Radical-enhanced atomic layer deposition uses oxygen radicals generated by a remote microwave-induced plasma as an oxidant to change the surface reactions of…”
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Electrical Characterization of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Irradiation
Published in Japanese Journal of Applied Physics (01-09-2005)“…We have found excellent electrical characteristics in germanium oxide grown by plasma oxidation for germanium metal-insulator-semiconductor gate dielectric…”
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Interface State Density Evaluation of p-Type and n-Type Ge/GeNx Structures by Conductance Technique
Published in Electronics and communications in Japan (01-06-2015)“…SUMMARY Ge‐MIS structures have attracted attention as next‐generation CMOS devices. We have reported that a GeNx/Ge structure with a low interface state…”
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Extensor indicis brevis Muscle: an Unusual Muscular Variant
Published in International journal of morphology (01-09-2012)“…Knowledge of anatomical variations of the musculoskeletal system is important for interpreting unusual clinical presentations. We observed the presence of an…”
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Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature
Published in Jpn J Appl Phys (01-09-2012)“…This paper reports on the thermal improvement of Si 3 N 4 /GeN x /Ge structures. After the Si 3 N 4 (5 nm)/GeN x (2 nm) stacks were prepared on Ge substrates…”
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Fabrication of Ta2O5∕GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques
Published in Applied physics letters (02-04-2007)“…The authors have fabricated germanium (Ge) metal-insulator-semiconductor (MIS) structures with a 7-nm-thick tantalum pentaoxide (Ta2O5)∕2-nm-thick germanium…”
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Kinesio taping effect on quadriceps strength and lower limb function of healthy individuals: A blinded, controlled, randomized, clinical trial
Published in Physical therapy in sport (01-03-2016)“…Abstract Objectives To analyze kinesio taping (KT) effect on quadriceps strength and lower limb function over a 7-day period. Design Blind randomized clinical…”
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Low-Temperature Formation of High-Quality \hbox Interlayer for High- \kappa Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques
Published in IEEE transactions on electron devices (01-01-2010)“…We have fabricated an Al 2 O 3 /GeO 2 gate-dielectric stack on p-type Ge by electron-cyclotron-resonance plasma oxidation and sputtering without external…”
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Pulsed Shortwave Treatment in Women With Knee Osteoarthritis: A Multicenter, Randomized, Placebo-Controlled Clinical Trial
Published in Physical therapy (01-07-2011)“…Several forms of conservative treatment have been the focus of many recent studies in knee osteoarthritis (OA). Among these techniques, the application of…”
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Upper trapezius relaxation induced by TENS and interferential current in computer users with chronic nonspecific neck discomfort: An electromyographic analysis
Published in Journal of back and musculoskeletal rehabilitation (01-01-2015)“…Recent studies have shown that a transcutaneous electrical nerve stimulation (TENS) and interferential current (IFC) application reduces pain in subjects with…”
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Electrical Behavior of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Oxidation in Capacitance and Conductance Measurements
Published in Japanese Journal of Applied Physics (01-11-2005)“…In this letter, we describe the electrical behavior of the GeO x and p-type Ge interface on the basis of capacitance and conductance measurements. The primary…”
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Electrical Characterization Techniques of Dielectric Thin Films Using Metal–Insulator–Metal Structures
Published in Japanese Journal of Applied Physics (01-10-2007)Get full text
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Effects of Excess Pb and Substrate on Crystallization Processes of Amorphous Pb(Zr, Ti)O 3 Thin Films Prepared by RF Magnetron Sputtering
Published in Japanese Journal of Applied Physics (01-09-1997)“…Effects of excess Pb and substrate on the crystallization processes of amorphous lead-zirconate-titanate (a-PZT) thin films by post-annealing in oxygen ambient…”
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Pulsed Electromagnetic Field and Exercises in Patients With Shoulder Impingement Syndrome: A Randomized, Double-Blind, Placebo-Controlled Clinical Trial
Published in Archives of physical medicine and rehabilitation (01-02-2014)“…Abstract Objective To evaluate the effects of pulsed electromagnetic field (PEMF) and exercises in reducing pain and improving function and muscle strength in…”
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Preparation of -oriented lead-zirconate-titanate films by sol-gel technique
Published in Japanese Journal of Applied Physics (01-09-1993)“…A sol-gel technique to control the crystalline orientation of lead-zirconate-titanate (PZT) films on Pt/Ti/SiO 2 /Si substrates has been studied. It is found…”
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Conference Proceeding Journal Article -
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Origin of dielectric relaxation observed for Ba0.5Sr0.5TiO3 thin-film capacitor
Published in Japanese journal of applied physics (1996)Get full text
Conference Proceeding