Search Results - "FREEMAN, Arthur J"

Switchable S = 1/2 and J = 1/2 Rashba bands in ferroelectric halide perovskites by Kim, Minsung, Im, Jino, Freeman, Arthur J., Ihm, Jisoon, Jin, Hosub

“…The Rashba effect is spin degeneracy lift originated from spin–orbit coupling under inversion symmetry breaking and has been intensively studied for…”
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Tunable Rashba Effect in Two-Dimensional LaOBiS2 Films: Ultrathin Candidates for Spin Field Effect Transistors by Liu, Qihang, Guo, Yuzheng, Freeman, Arthur J

“…Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit…”
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Hybrid Germanium Iodide Perovskite Semiconductors: Active Lone Pairs, Structural Distortions, Direct and Indirect Energy Gaps, and Strong Nonlinear Optical Properties by Stoumpos, Constantinos C, Frazer, Laszlo, Clark, Daniel J, Kim, Yong Soo, Rhim, Sonny H, Freeman, Arthur J, Ketterson, John B, Jang, Joon I, Kanatzidis, Mercouri G

“…The synthesis and properties of the hybrid organic/inorganic germanium perovskite compounds, AGeI3, are reported (A = Cs, organic cation). The systematic study…”
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Hidden spin polarization in inversion-symmetric bulk crystals by Zhang, Xiuwen, Liu, Qihang, Luo, Jun-Wei, Freeman, Arthur J., Zunger, Alex

“…Spin–orbit coupling can induce spin polarization in nonmagnetic 3D crystals when the inversion symmetry is broken, as manifested by the bulk Rashba and…”
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Antagonism between Spin-Orbit Coupling and Steric Effects Causes Anomalous Band Gap Evolution in the Perovskite Photovoltaic Materials CH3NH3Sn1-xPbxI3 by Im, Jino, Stoumpos, Constantinos C, Jin, Hosub, Freeman, Arthur J, Kanatzidis, Mercouri G

“…Halide perovskite solar cells are a recent ground-breaking development achieving power conversion efficiencies exceeding 18%. This has become possible owing to…”
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CsSnI3: Semiconductor or Metal? High Electrical Conductivity and Strong Near-Infrared Photoluminescence from a Single Material. High Hole Mobility and Phase-Transitions by Chung, In, Song, Jung-Hwan, Im, Jino, Androulakis, John, Malliakas, Christos D, Li, Hao, Freeman, Arthur J, Kenney, John T, Kanatzidis, Mercouri G

“…CsSnI3 is an unusual perovskite that undergoes complex displacive and reconstructive phase transitions and exhibits near-infrared emission at room temperature…”
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Crystal Growth of the Perovskite Semiconductor CsPbBr3: A New Material for High-Energy Radiation Detection by Stoumpos, Constantinos C, Malliakas, Christos D, Peters, John A, Liu, Zhifu, Sebastian, Maria, Im, Jino, Chasapis, Thomas C, Wibowo, Arief C, Chung, Duck Young, Freeman, Arthur J, Wessels, Bruce W, Kanatzidis, Mercouri G

“…The synthesis, crystal growth, and structural and optoelectronic characterization has been carried out for the perovskite compound CsPbBr3. This compound is a…”
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Structural and Electrical Functionality of NiO Interfacial Films in Bulk Heterojunction Organic Solar Cells by Irwin, Michael D, Servaites, Jonathan D, Buchholz, D. Bruce, Leever, Benjamin J, Liu, Jun, Emery, Jonathan D, Zhang, Ming, Song, Jung-Hwan, Durstock, Michael F, Freeman, Arthur J, Bedzyk, Michael J, Hersam, Mark C, Chang, Robert P. H, Ratner, Mark A, Marks, Tobin J

“…The functionality of NiO interfacial layers in enhancing bulk heterojunction (BHJ) organic photovoltaic (OPV) cell performance is investigated by integrated…”
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Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells by Zhou, Nanjia, Myung-Gil Kim, Stephen Loser, Jeremy Smith, Hiroyuki Yoshida, Xugang Guo, Charles Song, Hosub Jin, Zhihua Chen, Seok Min Yoon, Arthur J. Freeman, Robert P. H. Chang, Antonio Facchetti, Tobin J. Marks

“…Significance The development of system-independent and non–material-specific interfacial layers (IFLs) to facilitate efficient charge collection is of…”
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Hybridization Gap and Dresselhaus Spin Splitting in EuIr4In2Ge4 by Calta, Nicholas P., Im, Jino, Rodriguez, Alexandra P., Fang, Lei, Bugaris, Daniel E., Chasapis, Thomas C., Freeman, Arthur J., Kanatzidis, Mercouri G.

“…EuIr4In2Ge4 is a new intermetallic semiconductor that adopts a non‐centrosymmetric structure in the tetragonal ${I\bar 42m}$ space group with unit cell…”
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CdO as the Archetypical Transparent Conducting Oxide. Systematics of Dopant Ionic Radius and Electronic Structure Effects on Charge Transport and Band Structure by Yang, Yu, Jin, Shu, Medvedeva, Julia E, Ireland, John R, Metz, Andrew W, Ni, Jun, Hersam, Mark C, Freeman, Arthur J, Marks, Tobin J

“…A series of yttrium-doped CdO (CYO) thin films have been grown on both amorphous glass and single-crystal MgO(100) substrates at 410 °C by metal−organic…”
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Topological Oxide Insulator in Cubic Perovskite Structure by Jin, Hosub, Rhim, Sonny H., Im, Jino, Freeman, Arthur J.

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Flux Crystal Growth of the Ternary Polygermanide LaPtGe2, a p-Type Metal by Bugaris, Daniel E., Sturza, Mihai, Han, Fei, Im, Jino, Chung, Duck Young, Freeman, Arthur J., Kanatzidis, Mercouri G.

“…Large plate crystals of LaPtGe2 have been grown by using an inert indium metal flux. This compound crystallizes in the CeNiSi2‐type structure (orthorhombic…”
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Search and design of nonmagnetic centrosymmetric layered crystals with large local spin polarization by Liu, Qihang, Zhang, Xiuwen, Jin, Hosub, Lam, Kanber, Im, Jino, Freeman, Arthur J., Zunger, Alex

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Computational quantum magnetism: Role of noncollinear magnetism by Freeman, Arthur J., Nakamura, Kohji

“…We are witnessing today a golden age of innovation with novel magnetic materials and with discoveries important for both basic science and device applications…”
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First principles investigation of zinc-induced embrittlement in an aluminum grain boundary by Zhang, Shengjun, Kontsevoi, Oleg Y., Freeman, Arthur J., Olson, Gregory B.

“…Aluminum–zinc alloys have an extensive range of structural applications, but their susceptibility to intergranular stress corrosion cracking limits their wider…”
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Dimensional Reduction: A Design Tool for New Radiation Detection Materials by Androulakis, John, Peter, Sebastian C., Li, Hao, Malliakas, Christos D., Peters, John A., Liu, Zhifu, Wessels, Bruce W., Song, Jung-Hwan, Jin, Hosub, Freeman, Arthur J., Kanatzidis, Mercouri G.

“…Semiconductor materials for efficient hard radiation detection are identified by combining a powerful chemical concept called dimensional reduction and precise…”
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Hydrogen-Promoted Grain Boundary Embrittlement and Vacancy Activity in Metals: Insights from Ab Initio Total Energy Calculatons by Geng, Wen-Tong, Freeman, Arthur J., Olson, Gregory B., Tateyama, Yoshitaka, Ohno, Takahisa

“…The rapid diffusion of H in metals permits an easy segregation to the grain boundary and an easy trapping to the vacancy. H-induced intergranular embrittlement…”
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Soluble Semiconductors AAsSe2 (A = Li, Na) with a Direct-Band-Gap and Strong Second Harmonic Generation: A Combined Experimental and Theoretical Study by Bera, Tarun K, Jang, Joon I, Song, Jung-Hwan, Malliakas, Christos D, Freeman, Arthur J, Ketterson, John B, Kanatzidis, Mercouri G

“…AAsSe2 (A = Li, Na) have been identified as a new class of polar direct-band gap semiconductors. These I−V−VI2 ternary alkali-metal chalcoarsenates have…”
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Topological Oxide Insulator in Cubic Perovskite Structure by Jin, Hosub, Rhim, Sonny H., Im, Jino, Freeman, Arthur J.

“…The emergence of topologically protected conducting states with the chiral spin texture is the most prominent feature at the surface of topological insulators…”
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