Search Results - "FRATESCHI, N. C"

High-frequency GaAs optomechanical bullseye resonator by C. Carvalho, N., Benevides, R., Ménard, M., S. Wiederhecker, G., C. Frateschi, N., Mayer Alegre, T. P.

“…The integration of optomechanics and optoelectronics in a single device opens new possibilities for developing information technologies and exploring…”
Get full text

Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrix by Mestanza, S. N. M, Doi, I, Swart, J. W, Frateschi, N. C

“…Ge nanocrystallites (Ge-nc) have been formed by ion implantation of Ge⁺⁷⁴ into SiO₂ matrix, thermally grown on p-type Si substrates. The Ge-nc are examined by…”
Get full text

Uncooled performance of 10-Gb/s laser modules with InGaAlAs-InP and InGaAsP-InP MQW electroabsorption Modulators integrated with semiconductor amplifiers by Frateschi, N.C., Zhang, J., Jambunathan, R., Choi, W.J., Ebert, C., Bond, A.E.

“…Uncooled operation of long-reach high performance C-band 10 Gb/s of optical modulator modules is presented. Modules consisting of a distributed feedback laser…”
Get full text

GaN nano- and micro-spheres fabricated selectively on silicon by Barea, L.A.M., von Zuben, A.A.G., Márquez, A.Z., Frateschi, N.C.

“…This work presents the selective growth of three-dimensional metallic gallium nitride structures on silicon substrates by chemical beam epitaxy (CBE) with a…”
Get full text

Resonant modes and laser spectrum of microdisk lasers by Frateschi, N. C., Levi, A. F. J.

“…A theory for quantitative analysis of microdisk laser emission spectra is presented. Conformal mapping is used to determine the radial and azimuthal…”
Get full text

Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In 0.68Ga 0.32As 0.7P 0.3) barriers for high current injection efficiency by Mialichi, J.R., Frateschi, N.C.

“…We present the growth of stacked layers of InAs quantum dots directly on high bandgap In 0.68Ga 0.32As 0.7P 0.3 ( λ g=1420 nm) barriers. The quaternary…”
Get full text

Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy by de Castro, M.P.P., von Zuben, A.A., Frateschi, N.C., Santo, L.L.E., Galvão, D.S., Bettini, J., de Carvalho, M.M.G.

“…We present an investigation of beryllium doping selectivity in InGaP layers grown by chemical beam epitaxy on pre-patterned substrates. We observed a…”
Get full text

Hybrid planar microresonators with organic and InGaAs active media by Mialichi, J R, Camposeo, A, Persano, L, Barea, L A M, Del Carro, P, Pisignano, D, Frateschi, N C

“…The authors report on the fabrication of hybrid planar micro-resonators based on InGaAs microdisks with an evaporated organic material. Samples of InGaAs grown…”
Get full text

In0.49Ga0.51P growth on pre-patterned GaAs substrates by chemical beam epitaxy by DE CASTRO, M. P. P, FRATESCHI, N. C, BETTINI, J, DE CARVALHO, M. M

Get full text

Spatial composition dependence in InGaP growth on pre-patterned GaAs substrates by chemical beam epitaxy by de Castro, Maria P.P, Frateschi, N.C, Bettini, J, Ribeiro, C.A, de Carvalho, M.M

“…We have investigated the spatial composition variation in InGaP layers grown by chemical beam epitaxy (CBE) on pre-patterned substrates. At growth temperature…”
Get full text

Analysis of Be doping of InGaP lattice matched to GaAs by Bettini, J, de Carvalho, M.M.G, Cotta, M.A, Pudenzi, M.A.A, Frateschi, N.C, Silva Filho, A, Cardoso, L.P, Landers, R

“…We present a study on the growth of Be-doped InGaP layers lattice matched to GaAs substrates by chemical beam epitaxy. We show that the presence of the dopant…”
Get full text

Analysis of nonplanar wave propagation through multilayer Bragg reflectors for folded cavity and vertical cavity surface emitting laser structures by FRATESCHI, N. C, DAPKUS, P. D, OU, S. S, YANG, J. J, JANSEN, M

“…A theoretical approach to nonplanar wave propagation through Bragg reflector multilayer structures is presented. The theory is applied to the optical coupling…”
Get full text

High-Frequency GaAs Optomechanical Bullseye Resonator by Carvalho, N. C, Benevides, R, Ménard, M, Wiederhecker, G. S, Frateschi, N. C, Alegre, T. P. Mayer

“…The integration of optomechanics and optoelectronics in a single device opens new possibilities for developing information technologies and exploring…”
Get full text

Resonant amplification via Er-doped clad Si photonic molecules: Towards compact low-loss/high-Q Si photonic devices by Jarschel, P.F., Frateschi, N.C.

“…•Propose a method for reducing optical loss in resonant structures.•It consists on replacing SiO2 top claddings in Si waveguides by erbium-doped…”
Get full text

Three-terminal bistable low-threshold strained InGaAs/GaAs laser grown on structured substrates for digital modulation by Frateschi, N.C., Zhao, H., Elliot, J., Siala, S., Govindarajan, M., Nottenburg, R.N., Dapkus, P.D.

“…Strained InGaAs/GaAs quantum-well three-terminal lasers with monolithically integrated intracavity modulators were fabricated using low threshold current…”
Get full text

Enhancing the Delay/Advance -Bandwidth Product using degenerate resonances of photonic molecules in a Silicon Photonics Platform by Rossi, M. B., Souza, M. C. M. M., Jarschel, P. F., Frateschi, N. C.

“…We propose the use of photonic molecules, i.e., coupled silicon ring structures, with triplet resonances for enhancing the delay-bandwidth product for analog…”
Get full text

High efficiency InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition by Zhao, H., MacDougal, M.H., Frateschi, N.C., Siala, S., Dapkus, P.D., Nottenburg, R.N.

“…Low-threshold-current single-quantum-well InGaAs/GaAs lasers are fabricated by metalorganic chemical vapor deposition on a nonplanar substrate. By taking…”
Get full text

Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In sub(0.68)Ga sub(0.32)As sub(0.7)P sub(0.3)) barriers for high current injection efficiency by Mialichi, J R, Frateschi, N C

“…We present the growth of stacked layers of InAs quantum dots directly on high bandgap In sub(0.68)Ga sub(0.32)As sub(0.7)P sub(0.3) ( lambda sub(g)=1420 nm)…”
Get full text

Optimized electrolyte for electrochemical capacitance-voltage profiling of carrier concentration in In0.49Ga0.51P by Da Silva Filho, A., Frateschi, N. C.

Get full text

Perturbation theory for the wave equation and the "Effective refractive index" approach by Frateschi, N., De Castro, A.

“…We describe an Au and Aharonov type perturbation theory for the two-dimensional scalar wave equation. As an application, we show that the "effective refractive…”
Get full text