Search Results - "FLOREZ, L. T"
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Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization
Published in IEEE journal of quantum electronics (01-06-1991)“…The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 mu m to>50 mu m. Design…”
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2
Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasers
Published in IEEE journal of quantum electronics (01-06-1991)“…The dynamic, polarization, and transverse mode characteristics of strained InGaAs-GaAs quantum well vertical cavity surface emitting lasers (VCSELs) emitting…”
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3
Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates
Published in Applied physics letters (11-06-1990)“…Epitaxial liftoff is an alternative to lattice-mismatched heteroepitaxial growth. Multilayer AlxGa1−xAs epitaxial films are separated from their growth…”
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4
Large two-dimensional arrays of phase-locked vertical cavity surface emitting lasers
Published in Applied physics letters (30-03-1992)“…The phase-locking of two-dimensional (2D) arrays incorporating a large number of electrically pumped, vertical cavity surface emitting lasers (VCSELs) is…”
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5
Relationship among reflectance-difference spectroscopy, surface photoabsorption, and spectroellipsometry
Published in Applied physics letters (16-08-1993)“…From the reflectance expressions for a thin biaxial layer on an isotropic substrate we relate reflectance-difference spectroscopy (RDS), surface…”
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6
Transverse mode characteristics of vertical cavity surface-emitting lasers
Published in Applied physics letters (16-07-1990)“…Transverse mode characteristics of vertical cavity surface-emitting (VC-SE) lasers are described. The mode structure is investigated as a function of the…”
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7
Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-1988)“…We perform an accuracy analysis of several possible reflectance–difference (RD) configurations that are compatible with standard molecular‐beam epitaxy (MBE)…”
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8
Optical-reflectance and electron-diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)
Published in Physical review letters (12-10-1987)Get full text
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9
Multiple wavelength tunable surface-emitting laser arrays
Published in IEEE journal of quantum electronics (01-06-1991)“…Techniques to achieve wavelength multiplexing and tuning capabilities in vertical-cavity surface-emitting lasers (VCSELs) are described, and experimental…”
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10
Two-dimensional phase locked arrays of vertical-cavity semiconductor lasers by mirror reflectivity modulation
Published in Applied physics letters (25-02-1991)“…Coupling of two-dimensional (2D) vertical-cavity surface-emitting lasers (VCSELs) to give a coherent supermode is described. The top metal layer of a…”
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11
Photon-mediated sequential resonant tunneling in intense terahertz electric fields
Published in Physical review letters (14-06-1993)Get full text
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12
Direct optical measurement of surface dielectric responses: interrupted growth on (001) GaAs
Published in Physical review letters (08-01-1990)Get full text
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13
Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor deposition
Published in Applied physics letters (09-03-1992)“…Arsenic dimers and multilayers are shown to exist on (001)GaAs surfaces under atmospheric pressure (AP) organometallic chemical vapor deposition (OMCVD)…”
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14
Low threshold buried heterostructure vertical cavity surface emitting laser
Published in Applied physics letters (06-09-1993)“…We report the first low threshold, buried heterostructure (BH) vertical cavity surface emitting laser (VCSEL) using organometallic chemical vapor deposition…”
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15
Fabrication of microlasers and microresonator optical switches
Published in Applied physics letters (25-12-1989)“…We have microfabricated low-threshold, high-speed vertical-cavity lasers and optical switches by optimizing the mirror design, crystal growth, and ion etching…”
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16
Epitaxial MnGa/NiGa magnetic multilayers on GaAs
Published in Applied physics letters (02-08-1993)“…We have grown a new class of epitaxial metallic multilayers consisting of ultrathin ferromagnetic tetragonal MnGa and nonmagnetic (CsCl-type) NiGa on (001)…”
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17
Observation of quantum confinement by strain gradients
Published in Physical review letters (02-09-1991)Get full text
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18
Optical switching in a resonant tunneling structure
Published in Applied physics letters (04-03-1991)“…We describe the interaction of light pulses with a GaAs/AlAs resonant tunneling structure. We demonstrate that light with an average power of less than 10 μW…”
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19
Oscillations in the optical response of (001)GaAs and AlGaAs surfaces during crystal growth by molecular beam epitaxy
Published in Applied physics letters (13-06-1988)“…Upon initiation of growth by molecular beam epitaxy, reflectance-difference (RD) signals for (001)GaAs and AlAs surfaces exhibit a cyclic component that is…”
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20
Fabrication of a two-dimensional phased array of vertical-cavity surface-emitting lasers
Published in Applied physics letters (26-03-1990)“…We report the successful fabrication of a two-dimensional phase-locked array of vertical-cavity surface-emitting lasers. The array was comprised of more than…”
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