Search Results - "FINA, I"

Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films by Lyu, J., Fina, I., Solanas, R., Fontcuberta, J., Sánchez, F.

“…Ferroelectric orthorhombic Hf0.5Zr0.5O2 thin films have been stabilized epitaxially on La2/3Sr1/3MnO3/SrTiO3(001) by pulsed laser deposition. The epitaxial…”
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Room-temperature antiferromagnetic memory resistor by Marti, X., Fina, I., Frontera, C., Liu, Jian, Wadley, P., He, Q., Paull, R. J., Clarkson, J. D., Kudrnovský, J., Turek, I., Kuneš, J., Yi, D., Chu, J-H., Nelson, C. T., You, L., Arenholz, E., Salahuddin, S., Fontcuberta, J., Jungwirth, T., Ramesh, R.

“…The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access…”
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Features of structure, magnetic state and electrodynamic performance of SrFe12−xInxO19 by Turchenko, V. A., Trukhanov, S. V., Kostishin, V. G., Damay, F., Porcher, F., Klygach, D. S., Vakhitov, M. G., Lyakhov, D., Michels, D., Bozzo, B., Fina, I., Almessiere, M. A., Slimani, Y., Baykal, A., Zhou, D., Trukhanov, A. V.

“…Indium-substituted strontium hexaferrites were prepared by the conventional solid-phase reaction method. Neutron diffraction patterns were obtained at room…”
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Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates by Lyu, J., Fina, I., Bachelet, R., Saint-Girons, G., Estandía, S., Gázquez, J., Fontcuberta, J., Sánchez, F.

“…SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrodes on Si(001). The Hf0.5Zr0.5O2…”
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Electric control of magnetism at the Fe/BaTiO3 interface by Radaelli, G., Petti, D., Plekhanov, E., Fina, I., Torelli, P., Salles, B. R., Cantoni, M., Rinaldi, C., Gutiérrez, D., Panaccione, G., Varela, M., Picozzi, S., Fontcuberta, J., Bertacco, R.

“…Interfacial magnetoelectric coupling is a viable path to achieve electrical writing of magnetic information in spintronic devices. For the prototypical…”
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Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2 by Adkins, J. W., Fina, I., Sánchez, F., Bakaul, S. R., Abiade, J. T.

“…Herein, we report a cryogenic-temperature study on the evolution of the ferroelectric properties of epitaxial Hf0.5Zr0.5O2 thin films on silicon. Wake-up,…”
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Polarization-dependent electrocaloric and pyroelectric effects in ferroelectric BaTiO3 thin films by Adkins, J. W., Fina, I., Sánchez, F., Bakaul, S. R., Abiade, J. T.

“…Herein, we examine the influence of controllable polarization reversal and built-in electric fields on pyroelectric and electrocaloric effects in a BaTiO3 thin…”
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Anisotropic magnetoresistance in an antiferromagnetic semiconductor by Fina, I., Marti, X., Yi, D., Liu, J., Chu, J. H., Rayan-Serrao, C., Suresha, S., Shick, A. B., Železný, J., Jungwirth, T., Fontcuberta, J., Ramesh, R.

“…Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena…”
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Erratum: “Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2” [Appl. Phys. Lett. 117, 142902 (2020)] by Adkins, J. W., Fina, I., Sánchez, F., Bakaul, S. R., Abiade, J. T.

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Magnetization reversal by electric-field decoupling of magnetic and ferroelectric domain walls in multiferroic-based heterostructures by Skumryev, V, Laukhin, V, Fina, I, Martí, X, Sánchez, F, Gospodinov, M, Fontcuberta, J

“…We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO(3)) can be speedily reversed by electric-field…”
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The origin of the dual ferroic properties in quasi-centrosymmetrical SrFe12−xInxO19 hexaferrites by Trukhanov, A.V., Turchenko, V.A., Kostishin, V.G., Damay, F., Porcher, F., Lupu, N., Bozzo, B., Fina, I., Polosan, S., Silibin, M.V., Salem, M.M., Tishkevich, D.I., Trukhanov, S.V.

“…•In-substituted SrM hexaferrites were synthesized using solid state reactions.•Coexistence of the electrical and magnetic ordering at room temperature was…”
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Voltage-driven strain-mediated modulation of exchange bias in Ir20Mn80/Fe80Ga20/Ta/⟨011⟩-oriented PMN-32PT heterostructures by Demirci, E., de Rojas, J., Quintana, A., Fina, I., Menéndez, E., Sort, J.

“…Manipulation of exchange bias with electric field is appealing to boost energy efficiency in spintronic devices. Here, this effect is shown at room temperature…”
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Electric Control of Antiferromagnets by Fina, I., Marti, X.

“…In the past five years, most of the paradigmatic concepts employed in spintronics have been replicated substituting ferromagnets by antiferromagnets in the…”
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Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn by Galceran, R., Fina, I., Cisneros-Fernández, J., Bozzo, B., Frontera, C., López-Mir, L., Deniz, H., Park, K.-W., Park, B.-G., Balcells, Ll, Martí, X., Jungwirth, T., Martínez, B.

“…Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the…”
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Hidden Magnetic States Emergent Under Electric Field, In A Room Temperature Composite Magnetoelectric Multiferroic by Clarkson, J. D., Fina, I., Liu, Z. Q., Lee, Y., Kim, J., Frontera, C., Cordero, K., Wisotzki, S., Sanchez, F., Sort, J., Hsu, S. L., Ko, C., Aballe, L., Foerster, M., Wu, J., Christen, H. M., Heron, J. T., Schlom, D. G., Salahuddin, S., Kioussis, N., Fontcuberta, J., Marti, X., Ramesh, R.

“…The ability to control a magnetic phase with an electric field is of great current interest for a variety of low power electronics in which the magnetic state…”
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Investigation of magneto-structural phase transition in FeRh by reflectivity and transmittance measurements in visible and near-infrared spectral region by Saidl, V, Brajer, M, Horák, L, Reichlová, H, Výborný, K, Veis, M, Janda, T, Trojánek, F, Maryško, M, Fina, I, Marti, X, Jungwirth, T, N mec, P

“…Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature…”
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High ferroelectric polarization in c-oriented BaTiO3 epitaxial thin films on SrTiO3/Si(001) by Scigaj, M., Chao, C. H., Gázquez, J., Fina, I., Moalla, R., Saint-Girons, G., Chisholm, M. F., Herranz, G., Fontcuberta, J., Bachelet, R., Sánchez, F.

“…The integration of epitaxial BaTiO3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest…”
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Chiral domains in cycloidal multiferroic thin films: switching and memory effects by Fina, I, Fàbrega, L, Martí, X, Sánchez, F, Fontcuberta, J

“…Cycloidal magnetic order occurring in some AMnO(3) perovskites is known to induce ferroelectricity. The polarization is perpendicular to the propagation vector…”
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Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling by Petti, D., Albisetti, E., Reichlová, H., Gazquez, J., Varela, M., Molina-Ruiz, M., Lopeandía, A. F., Olejník, K., Novák, V., Fina, I., Dkhil, B., Hayakawa, J., Marti, X., Wunderlich, J., Jungwirth, T., Bertacco, R.

“…In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set…”
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Magnetocapacitance in BaTiO3-CoFe2O4 nanocomposites by FINA, I, DIX, N, FABREGA, L, SANCHEZ, F, FONTCUBERTA, J

“…We report on the magnetoelectric characterization of epitaxial CoFe2O4-BaTiO3 nanocomposites grown by rf sputtering on Nb-doped SrTiO3 (001). Multiferroicity…”
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