Search Results - "FIERLING, G"

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  1. 1

    Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III–V semiconducting overhanging beams by Fierling, G., Letartre, X., Viktorovitch, P., Lainé, J. P., Priester, C.

    Published in Applied physics letters (05-04-1999)
    “…In this work, we demonstrate theoretically that the piezoelectric effect can be used to achieve confinement over quantum distances in systems grown on [001]…”
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    Journal Article
  2. 2

    Mechanical relaxation of strained semiconducting stripes: Influence on optoelectronic properties by Fierling, G., Buchheit, M., Letartre, X., Gendry, M., Viktorovitch, P., Sidoroff, F., Lainé, J. P.

    Published in Applied physics letters (15-09-1997)
    “…The mechanical relaxation of strained semiconducting stripes is studied. The deformation tensor is calculated using a classical approach of elasticity problem…”
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  3. 3

    Lateral band gap modulation by controlled elastic relaxation of strained multiquantum well structures on InP by Leclercq, J. L., Viktorovitch, P., Letartre, X., Nuban, M. F., Gendry, M., Benyattou, T., Guillot, G., Fierling, G., Priester, C.

    Published in Applied physics letters (28-08-1995)
    “…We describe a method of lateral band gap modulation by creating steep lateral strain gradients in multiquantum (MQW) structures on InP. The strain modulation…”
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  4. 4

    InP-based micromachined Mach-Zehnder interferometer stress sensors by SEASSAL, C, LECLERCQ, J. L, LAINE, J. P, SIDOROFF, F, FIERLING, G, LETARTRE, X, GENDRY, M, VIKTOROVITCH, P, BERTIC, Y, TROUILLET, A, CACHARD, A, BENECH, P

    “…In the field of III–V-based compounds, new functionalities can be reached by integrating micromechanical structures with electro-optical functions, in order to…”
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  5. 5

    Piezoelectric effect in micromachined [001] quantum wells: Theoretical aspects by Rincón, R., Priester, C., Fierling, G., Letartre, X., Viktorovitch, P.

    Published in Microelectronics (01-10-1997)
    “…In this work, we demonstrate the ability to take adBANtage of the piezoelectric effect in systems primarily grown on [001] GaAs substrates. Such an effect can…”
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