Search Results - "FIERLING, G"
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Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III–V semiconducting overhanging beams
Published in Applied physics letters (05-04-1999)“…In this work, we demonstrate theoretically that the piezoelectric effect can be used to achieve confinement over quantum distances in systems grown on [001]…”
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2
Mechanical relaxation of strained semiconducting stripes: Influence on optoelectronic properties
Published in Applied physics letters (15-09-1997)“…The mechanical relaxation of strained semiconducting stripes is studied. The deformation tensor is calculated using a classical approach of elasticity problem…”
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3
Lateral band gap modulation by controlled elastic relaxation of strained multiquantum well structures on InP
Published in Applied physics letters (28-08-1995)“…We describe a method of lateral band gap modulation by creating steep lateral strain gradients in multiquantum (MQW) structures on InP. The strain modulation…”
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4
InP-based micromachined Mach-Zehnder interferometer stress sensors
Published in Microsystem technologies : sensors, actuators, systems integration (16-05-1997)“…In the field of III–V-based compounds, new functionalities can be reached by integrating micromechanical structures with electro-optical functions, in order to…”
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5
Piezoelectric effect in micromachined [001] quantum wells: Theoretical aspects
Published in Microelectronics (01-10-1997)“…In this work, we demonstrate the ability to take adBANtage of the piezoelectric effect in systems primarily grown on [001] GaAs substrates. Such an effect can…”
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