Search Results - "FEOFANOV, Y"

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  1. 1

    Excitons in high-quality CuInS2 single crystals by Yakushev, M.V., Mudryi, A.V., Feofanov, Y., Ivaniukovich, A.V., Victorov, I.V.

    Published in Thin solid films (26-07-2006)
    “…High purity single crystals of CuInS2, grown by the traveling heater method using an indium solvent, were characterised using photoluminescence and reflectance…”
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    Journal Article
  2. 2

    Optical properties and band gap energy of CuInSe2 thin films prepared by two-stage selenization process by YAKUSHEV, M. V, MUDRYI, A. V, GREMENOK, V. F, ZALESSKI, V. B, ROMANOV, P. I, FEOFANOV, Y. V, MARTIN, R. W, TOMLINSON, R. D

    “…Chalcopyrite polycrystalline CuInSe2 (CIS) films with various elemental composition, synthesized by the two-stage selenization process on soda-lime glass…”
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    Conference Proceeding Journal Article
  3. 3

    Low temperature air-annealing of Cu(InGa)Se2 single crystals by Yakushev, M.V., Jack, A., Pettigrew, I., Feofanov, Y., Mudryi, A.V., Krustok, J.

    Published in Thin solid films (26-07-2006)
    “…CuInSe2 and CuIn0.95Ga0.05Se2 single crystals, grown by vertical Bridgman, were annealed in air at temperatures from 100 to 160 deg C. Both CuInSe2 and…”
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    Journal Article
  4. 4
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    Effects of deviation from stoichiometry on excitons in CuInSe2 single crystals by Yakushev, M.V., Mudryi, A.V., Feofanov, Y., Tomlinson, R.D.

    Published in Thin solid films (01-05-2003)
    “…High-quality CuInSe2 (CIS) single crystals grown by the vertical Bridgman method were studied using photoluminescence (PL) and optical reflection. The Cu/In…”
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    Journal Article
  6. 6

    Influence of growth conditions on the structural quality of Cu(InGa)Se2 and CuInSe2 thin films by Yakushev, M.V, Mudryi, A.V, Gremenok, V.F, Zaretskaya, E.P, Zalesski, V.B, Feofanov, Y, Martin, R.W

    Published in Thin solid films (01-03-2004)
    “…Polycrystalline CuInGaSe2 (CIGS) and CuInSe2 (CIS) thin films were synthesized on glass substrates by a two-stage selenization process. The surface morphology,…”
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    Journal Article
  7. 7

    Excitons in high-quality CuInS 2 single crystals by Yakushev, M.V., Mudryi, A.V., Feofanov, Y., Ivaniukovich, A.V., Victorov, I.V.

    Published in Thin solid films (2006)
    “…High purity single crystals of CuInS 2, grown by the traveling heater method using an indium solvent, were characterised using photoluminescence and…”
    Get full text
    Journal Article
  8. 8

    Low temperature air-annealing of Cu(InGa)Se 2 single crystals by Yakushev, M.V., Jack, A., Pettigrew, I., Feofanov, Y., Mudryi, A.V., Krustok, J.

    Published in Thin solid films (26-07-2006)
    “…CuInSe 2 and CuIn 0.95Ga 0.05Se 2 single crystals, grown by vertical Bridgman, were annealed in air at temperatures from 100 to 160 °C. Both CuInSe 2 and CuIn…”
    Get full text
    Journal Article
  9. 9

    Effects of deviation from stoichiometry on excitons in CuInSe 2 single crystals by Yakushev, M.V., Mudryi, A.V., Feofanov, Y., Tomlinson, R.D.

    Published in Thin solid films (2003)
    “…High-quality CuInSe 2 (CIS) single crystals grown by the vertical Bridgman method were studied using photoluminescence (PL) and optical reflection. The Cu/In…”
    Get full text
    Journal Article
  10. 10

    Influence of growth conditions on the structural quality of Cu(InGa)Se 2 and CuInSe 2 thin films by Yakushev, M.V, Mudryi, A.V, Gremenok, V.F, Zaretskaya, E.P, Zalesski, V.B, Feofanov, Y, Martin, R.W

    Published in Thin solid films (2004)
    “…Polycrystalline CuInGaSe 2 (CIGS) and CuInSe 2 (CIS) thin films were synthesized on glass substrates by a two-stage selenization process. The surface…”
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    Journal Article
  11. 11

    Comparative study of Er-implanted Si, ZnAs 2 and CuInSe 2 by Yakushev, M.V, Mudryi, A.V, Martin, R.W, Feofanov, Y

    “…The indirect- (Si) and direct- (ZnAs 2, CuInSe 2) band-gap semiconductors, with E g of about 1 eV, ion-implanted with 350 keV Er, were studied using…”
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    Journal Article
  12. 12
  13. 13

    Comparative study of Er-implanted Si, ZnAs(2) and CuInSe(2) by Yakushev, M V, Mudryi, A V, Martin, R W, Feofanov, Y

    “…The indirect- (Si) and direct- (ZnAs(2), CuInSe(2)) band-gap semiconductors, with E(g) of about 1 eV, ion-implanted with 350keV Er, were studied using…”
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    Journal Article
  14. 14

    Magneto-photoluminescence study of radiative recombination in CuInSe 2 single crystals by Yakushev, M.V., Feofanov, Y., Martin, R.W., Tomlinson, R.D., Mudryi, A.V.

    “…Radiative recombination processes in CuInSe 2 (CIS) single crystals grown by vertical Bridgman technique were studied using photoluminescence,…”
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    Journal Article
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    Information-technology approach to analysis and synthesis of control systems for heat treatment of disperse materials by VOZNESENSKII, V. V, FEOFANOV, Yu. A

    “…The objective of this study was to find a solution to the problem of information sufficiency in analysis and comparison of systems differing in both the…”
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    Journal Article