Search Results - "FENEBERG, M"

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001) by Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., As, D. J.

“…Selective area growth of cubic gallium nitride is investigated in a plasma assisted molecular beam epitaxy setup. 380 μm thick silicon (001) and 10 μm thick…”
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Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO by Neumann, M. D., Esser, N., Chauveau, J.-M., Goldhahn, R., Feneberg, M.

“…The anisotropic optical properties of wurtzite Mg x Zn1− x O thin films ( 0 ≤ x ≤ 0.45 ) grown on m-plane ZnO substrates by plasma assisted molecular beam…”
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Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures by Minj, A., Romero, M. F., Wang, Y., Tuna, Ö., Feneberg, M., Goldhahn, R., Schmerber, G., Ruterana, P., Giesen, C., Heuken, M.

“…The optical properties of fully coherently grown single InGaN/GaN heterostructures for 12 < I n % < 17 were investigated under low and high density…”
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Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells by Wecker, T., Hörich, F., Feneberg, M., Goldhahn, R., Reuter, D., As, D. J.

“…The non‐resonant carrier transfer in asymmetric double quantum wells is studied. Asymmetric cubic GaN/AlxGa1−xN double quantum wells with Al content of x =…”
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Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions by Neuschl, B., Thonke, K., Feneberg, M., Goldhahn, R., Wunderer, T., Yang, Z., Johnson, N. M., Xie, J., Mita, S., Rice, A., Collazo, R., Sitar, Z.

“…We report on the identification of a two-electron transition for the shallow donor silicon in homoepitaxial aluminum nitride (AlN). One c-oriented sample was…”
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Three-dimensional GaN for semipolar light emitters by Wunderer, T., Feneberg, M., Lipski, F., Wang, J., Leute, R. A. R., Schwaiger, S., Thonke, K., Chuvilin, A., Kaiser, U., Metzner, S., Bertram, F., Christen, J., Beirne, G. J., Jetter, M., Michler, P., Schade, L., Vierheilig, C., Schwarz, U. T., Dräger, A. D., Hangleiter, A., Scholz, F.

“…Selective‐area epitaxy is used to form three‐dimensional (3D) GaN structures providing semipolar crystal facets. On full 2‐in. sapphire wafers we demonstrate…”
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Influence of strain on the band gap energy of wurtzite InN by Schley, P., Goldhahn, R., Gobsch, G., Feneberg, M., Thonke, K., Wang, X., Yoshikawa, A.

“…Degenerate wurtzite InN films with electron concentrations in the range of 1018 cm–3 were studied by using spectroscopic ellipsometry (SE) in two spectral…”
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Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering by Leute, R. A. R., Feneberg, M., Sauer, R., Thonke, K., Thapa, S. B., Scholz, F., Taniyasu, Y., Kasu, M.

“…Low-temperature photoluminescence spectra of nominally undoped high quality AlN layers on SiC and Al 2 O 3 substrates are reported. Under high excitation…”
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Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN by Gridneva, E., Richter, E., Feneberg, M., Weyers, M., Goldhahn, R., Tränkle, G.

“…Variation of the H2 fraction in the carrier gas affects partial pressures and homogeneity of the species at the growth front. Changing the H2:N2 ratio thus…”
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Optimization of nucleation and buffer layer growth for improved GaN quality by Hertkorn, J., Brückner, P., Thapa, S.B., Wunderer, T., Scholz, F., Feneberg, M., Thonke, K., Sauer, R., Beer, M., Zweck, J.

“…By accurately optimizing the growth conditions for an oxygen doped AlN nucleation layer and for the subsequent epitaxial process the crystal quality of our GaN…”
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Piezoelectric fields in GaInN∕GaN quantum wells on different crystal facets by Feneberg, M., Lipski, F., Sauer, R., Thonke, K., Wunderer, T., Neubert, B., Brückner, P., Scholz, F.

“…Direction and strength of piezoelectric built-in fields of GaInN quantum wells have been experimentally determined. The quantum wells have been grown either on…”
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Quaternary AlxInyGa1―x―yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission by JETTER, M, WÄCHTER, C, MEYER, A, FENEBERG, M, THONKE, K, MICHLER, P

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Reliable polarization control of VCSELs through monolithically integrated surface gratings: a comparative theoretical and experimental study by Debernardi, P., Ostermann, J.M., Feneberg, M., Jalics, C., Michalzik, R.

“…Vertical cavity surface-emitting lasers (VCSELs) with a well-defined and predictable polarization of the emitted light are sought for a number of applications…”
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The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures by Thonke, K., Schirra, M., Schneider, R., Reiser, A., Prinz, G. M., Feneberg, M., Sauer, R., Biskupek, J., Kaiser, U.

“…Cathodoluminescence spectra recorded with high spatial and wavelength resolution on tilted ZnO epitaxial layers allow to identify a very prominent emission…”
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Droplet epitaxy of zinc-blende GaN quantum dots by Schupp, T., Meisch, T., Neuschl, B., Feneberg, M., Thonke, K., Lischka, K., As, D.J.

“…Zinc-blende GaN quantum dots were grown on 3C-AlN(0 0 1) by a vapor–liquid–solid process in a molecular beam epitaxy system. We were able to control the…”
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Zinc-blende GaN quantum dots grown by vapor–liquid–solid condensation by Schupp, T., Meisch, T., Neuschl, B., Feneberg, M., Thonke, K., Lischka, K., As, D.J.

“…Vapor–liquid–solid condensation was utilized to fabricate zinc-blende GaN quantum dots on 3C-AlN (001) in a molecular beam epitaxy system. By adjustment of…”
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Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets by Fujan, K. J., Feneberg, M., Neuschl, B., Meisch, T., Tischer, I., Thonke, K., Schwaiger, S., Izadi, I., Scholz, F., Lechner, L., Biskupek, J., Kaiser, U.

“…Ga x In 1 − x N quantum wells grown by metal organic vapor phase epitaxy on a plane GaN grown on r plane sapphire substrate typically show relatively large…”
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Growth and studies of Si-doped AlN layers by Thapa, S.B., Hertkorn, J., Scholz, F., Prinz, G.M., Leute, R.A.R., Feneberg, M., Thonke, K., Sauer, R., Klein, O., Biskupek, J., Kaiser, U.

“…Edge-type threading dislocations (TDs) can be reduced by increasing the epilayer thickness of undoped AlN grown on c -plane sapphire substrate by low pressure…”
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Beating of coupled ultraviolet light modes in zinc oxide nanoresonators by Schirra, M, Feneberg, M, Prinz, G M, Reiser, A, Röder, T, Thonke, K, Sauer, R

“…Periodic spatial intensity modulations of near-band-gap luminescence light at 3.36 eV photon energy are reported in nanometer-sized resonators of single zinc…”
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Semipolar GaN/GaInN LEDs with more than 1 mW optical output power by Neubert, B., Wunderer, T., Brückner, P., Scholz, F., Feneberg, M., Lipski, F., Schirra, M., Thonke, K.

“…The quantum confined Stark effect reduces the radiative recombination in strained GaInN/GaN heterostructures grown along the strong polar c-direction. Growth…”
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