Search Results - "FEDOROV, Vladimir V"
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Frontiers of Mid-IR Lasers Based on Transition Metal Doped Chalcogenides
Published in IEEE journal of selected topics in quantum electronics (01-09-2018)“…Enabling broad tunability, high peak and average power, ultrashort pulse duration, and all known modes of laser operation-transition-metal (TM)-doped II-VI…”
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Gallium Phosphide Nanowires in a Free-Standing, Flexible, and Semitransparent Membrane for Large-Scale Infrared-to-Visible Light Conversion
Published in ACS nano (25-08-2020)“…Engineering of nonlinear optical response in nanostructures is one of the key topics in nanophotonics, as it allows for broad frequency conversion at the…”
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Laser spectroscopic characterization of negatively charged nitrogen-vacancy (NV − ) centers in diamond
Published in Optical materials express (01-05-2019)“…We report on the spectroscopic and laser characterization of negatively charged nitrogen-vacancy (NV−) centers in diamond. Spectroscopic properties such as…”
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GaNP-based photovoltaic device integrated on Si substrate
Published in Solar energy materials and solar cells (01-03-2020)“…Gallium phosphide is an important material in terms of III-V semiconductors integration on Si. In this work we study photovoltaic properties of GaP:Be/GaNP…”
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Magnetization reversal in YIG/GGG(111) nanoheterostructures grown by laser molecular beam epitaxy
Published in Science and technology of advanced materials (01-01-2017)“…Thin (4-20 nm) yttrium iron garnet (Y 3 Fe 5 O 12 , YIG) layers have been grown on gadolinium gallium garnet (Gd 3 Ga 5 O 12 , GGG) 111-oriented substrates by…”
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Anisotropic Radiation in Heterostructured "Emitter in a Cavity" Nanowire
Published in Nanomaterials (Basel, Switzerland) (13-01-2022)“…Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic…”
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Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy
Published in Beilstein journal of nanotechnology (15-01-2018)“…In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN…”
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Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane
Published in Nanomaterials (Basel, Switzerland) (23-10-2020)“…Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of…”
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Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates
Published in Nanomaterials (Basel, Switzerland) (28-07-2021)“…Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic…”
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Progress in Mid-IR Lasers Based on Cr and Fe-Doped II-VI Chalcogenides
Published in IEEE journal of selected topics in quantum electronics (01-01-2015)“…Transition metal (TM) doped II-VI chalcogenide laser materials offer a unique blend of physical, spectroscopic, and technological parameters that make them the…”
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Controllable CaF2 Nanosized Stripe Arrays on Si(001) Studied by X-ray and Electron Diffraction
Published in Surfaces (Basel) (01-06-2021)“…Adding uniaxial in-plane anisotropy to the otherwise four-fold Si(001) surface has for a long time been known to be possible via epitaxial deposition of a…”
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XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
Published in Nanomaterials (Basel, Switzerland) (09-04-2021)“…Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering…”
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13
Novel design strategy for GaAs‐based solar cell by application of single‐walled carbon nanotubes topmost layer
Published in Energy science & engineering (01-08-2020)“…Attempts to improve solar cells efficiency touch all its constituents and are directly related to their fabrication protocols. While the most promising…”
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Highly efficient, narrow-linewidth, and single-frequency actively and passively Q-switched fiber-bulk hybrid Er:YAG lasers operating at 1645 nm
Published in Optics express (24-11-2008)“…High power, highly efficient single frequency oscillation of Er:YAG fiber-bulk hybrid laser at 1645 nm is demonstrated in actively and passively Q-switched…”
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15
Perovskite–Gallium Phosphide Platform for Reconfigurable Visible-Light Nanophotonic Chip
Published in ACS nano (28-07-2020)“…Reduction of the wavelength in on-chip light circuitry is critically important not only for the sake of keeping up with Moore’s law for photonics but also for…”
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Hot-pressed chromium doped zinc sulfide infrared transparent ceramics
Published in Scripta materialia (01-12-2016)“…The present study, for the first time, reports the successful consolidation of chromium doped zinc sulfide (ZnS) polycrystalline infrared (IR) transparent…”
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Nanoscale Electric Field Probing in a Single Nanowire with Raman Spectroscopy and Elastic Strain
Published in Nano letters (14-12-2022)“…In this work we investigate the Raman response of extremely strained gallium phosphide nanowires. We analyze new strain-induced spectral phenomena such as…”
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Temperature and concentration quenching of mid-IR photoluminescence in iron doped ZnSe and ZnS laser crystals
Published in Journal of luminescence (01-03-2012)“…Concentration dependences of the mid-IR kinetic of luminescence at 5 E↔ 5 T 2 transition in Fe:ZnSe and Fe:ZnS laser samples were studied in 14–300 K…”
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Elastic Gallium Phosphide Nanowire Optical Waveguides—Versatile Subwavelength Platform for Integrated Photonics
Published in Small (Weinheim an der Bergstrasse, Germany) (01-07-2023)“…Emerging technologies for integrated optical circuits demand novel approaches and materials. This includes a search for nanoscale waveguides that should…”
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Energy scaling of 4.3 μm room temperature Fe:ZnSe laser
Published in Optics letters (01-01-2011)“…We demonstrate a fourfold increase of the output energy of the gain-switched mid-IR Fe:ZnSe laser. Iron doping of the ZnSe polycrystalline samples was realized…”
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