Pulse-height defect in the passivated ion-implanted Si detectors of the INDRA array
The pulse-height defect (PHD) of 36Ar, 58Ni, 129Xe, 181Ta and 197Au ions in the 180 passivated ion-implanted silicon detectors of the INDRA array has been measured. The detectors faced the target with the low electric field side. The charge encoding ensured a low ballistic deficit. Detectors with th...
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Published in: | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 428; no. 2; pp. 379 - 390 |
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Main Authors: | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Elsevier B.V
1999
Elsevier |
Subjects: | |
Online Access: | Get full text |
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Summary: | The pulse-height defect (PHD) of
36Ar,
58Ni,
129Xe,
181Ta and
197Au ions in the 180 passivated ion-implanted silicon detectors of the INDRA array has been measured. The detectors faced the target with the low electric field side. The charge encoding ensured a low ballistic deficit. Detectors with the same nominal characteristics and electric field strength show a PHD dependence on the individual silicon wafer. They are classified and calibrated by using an empirical parametrization which relates the PHD to the total energy through a
Z-depending power law. A PHD analytical formula, based on a simple recombination model, is also proposed. It considers a realistic charge density variation with the position coordinate on the ion path. This new formula is successfully confronted to some experimental data. |
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ISSN: | 0168-9002 1872-9576 |
DOI: | 10.1016/S0168-9002(99)00168-0 |