Search Results - "Ezubchenko, I.S."

Influence of the growth conditions of LT-AlN on quality of HT-AlN growth on Si (1 1 1) by metalorganic chemical vapor deposition by Chernykh, M.Y., Ezubchenko, I.S., Mayboroda, I.O., Zanaveskin, M.L.

“…•The main factor influencing the AlN films quality is the degree of the aluminium substrate coating.•Significant aluminium substrate coating leads to the…”
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GaN-based heterostructures with CVD diamond heat sinks: A new fabrication approach towards efficient electronic devices by Chernykh, M.Y., Andreev, A.A., Ezubchenko, I.S., Chernykh, I.A., Mayboroda, I.O., Kolobkova, E.M., Khrapovitskaya, Yu. V., Grishchenko, J.V., Perminov, P.A., Sedov, V.S., Martyanov, A.K., Altakhov, A.S., Komlenok, M.S., Pashinin, V.P., Sinogeykin, A.G., Konov, V.I., Zanaveskin, M.L.

“…•Diamond and GaN integration using SOI wafer is effective way to increase HEMT power.•Diamond heat sink reduces the surface temperature of the…”
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Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal by Maiboroda, I. O., Grishchenko, J. V., Ezubchenko, I. S., Sokolov, I. S., Chernych, I. A., Andreev, A. A., Zanaveskin, M. L.

“…The nonlinear behavior of the I – V characteristics of symmetric contacts between a metal and degenerate n -GaN, which form oppositely connected Schottky…”
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Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure by Andreev, A. A., Vavilova, E. A., Ezubchenko, I. S., Zanaveskin, M. L., Maiboroda, I. O.

“…The influence of low-temperature passivating GaN cap layers on the electrophysical parameters of a 2D electron gas (2DEG) in heterostructure high-electron…”
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Electroluminescence of single CdSe nanocrystals induced by scanning tunneling microscope by Trifonov, A.S., Osad'ko, I.S., Ezubchenko, I.S., Prokhorova, I.G., Snigirev, O.V.

“…Electroluminescence intensity of single CdSe nanocrystals (NCs) excited by the tunnel current of a scanning tunneling microscope (STM) was measured. Samples…”
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Fluctuations of electroluminescence intensity of single CdSe nanocrystals excited by scanning tunneling microscope current by Osad'ko, I.S., Trifonov, A.S., Ezubchenko, I.S., Prokhorova, I.G.

“…Electroluminescence from single CdSe nanocrystals (NCs) excited by tunneling current of scanning tunneling microscope (STM) has been measured. Two types of…”
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