Search Results - "Ezhovskii, Yu. K."
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1
Reactivity of Hydroxyl Groups on the Surface of Solid Oxides in Atomic Layer Deposition Processes
Published in Inorganic materials (01-09-2021)“…— This paper demonstrates the feasibility of using induction constants for quantitatively assessing the reactivity of hydroxyl groups on the surface of some…”
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2
Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides
Published in Russian microelectronics (01-02-2024)“…The results of studying the processes of formation of silicon oxide nanolayers by the method of molecular layering (atomic layer deposition) on the surface of…”
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3
Nanolayers of Tantalum- and Aluminum Oxides and Dielectric Compositions Based on Them
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01-03-2021)“…The generalized results of studying the formation of nanolayers of tantalum- and aluminum oxides, as well as their multilayer compositions obtained by…”
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4
Surface Reactivity of Single-Crystal Silicon in Atomic Layer Deposition Processes
Published in Inorganic materials (01-02-2019)“…— A macromolecular concept of the structure of solids and induction constants are used to quantitatively assess the reactivity of hydroxyl groups on the…”
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5
Molecular layering of silicon and aluminum oxides on binary semiconductors
Published in Russian Journal of Physical Chemistry A (01-04-2017)“…The formation of nanolayers of silicon and aluminum oxides, obtained by means of molecular layering (or atomic layer deposition (ALD technology)) on surfaces…”
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6
Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow Discharge
Published in Russian microelectronics (01-07-2019)“…The process of the formation of silicon–nitrogen nanostructures at a GaAs surface with orientation (100) and (110) by atomic layer deposition (molecular…”
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7
Molecular Layering of Silicon Nitride Nanolayers with the Use of Ammonia Plasma
Published in Inorganic materials : applied research (2021)“…The formation of silicon–nitrogen nanolayers on the GaAs surface with orientations (100) and (110) by molecular layering in the temperature range of 423–773 K…”
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8
Molecular Layer Deposition of Silicon Nitride with Glow Discharge Activation
Published in Russian Journal of Physical Chemistry A (01-03-2018)“…The formation of silicon-nitrogen nanolayers obtained by molecular layer deposition on the GaAs surface with (100) and (110) orientations in the temperature…”
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9
Formation of Dielectric Nanolayers of Aluminum and Silicon Oxides on AIIIBV Semiconductors
Published in Russian microelectronics (2019)“…The results of investigations of the synthesis of silicon and aluminum oxide nanolayers on the GaAs, InAs, and InSb binary semiconductor surface by molecular…”
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10
Atomic-layer deposition of cadmium chalcogenides on silicon
Published in Russian Journal of Physical Chemistry A (01-09-2014)“…The results of studies of the synthesis of ultrafine layers of cadmium selenide and telluride by atomic-layer deposition on the silicon surface of different…”
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11
Surface modification of silicate matrices with chromium oxides
Published in Russian Journal of Physical Chemistry A (01-08-2015)“…Results from the surface modification of silicate matrices (quartz, glass, glass ceramics) with Cr(VI) chromium oxide groups via molecular layering are…”
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12
Atomic layer deposition of chromium oxide nanolayers
Published in Inorganic materials (01-12-2007)“…Chromium oxide nanolayers containing active Cr(VI) groups have been grown on quartz, glass, and glass-ceramic substrates by atomic layer deposition. The effect…”
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13
Atomic layer deposition of multilayer ZnTe/CdTe nanostructures
Published in Inorganic materials (01-07-2007)“…The growth of ultrathin zinc telluride and cadmium telluride films (nanostructures) and multilayer ZnTe/CdTe heterostructures by atomic layer deposition from…”
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14
Reactivity of solid surfaces in the chemical nanotechnology of low-dimensional systems
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01-05-2015)“…The concept of the macromolecular structure of solids and quantitative estimation of surface reactivity using inductive constants is applied to the estimate of…”
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15
Atomic layer deposition of zinc sulfide nanolayers on monocrystalline silicon substrates
Published in Russian Journal of Physical Chemistry A (01-03-2016)“…The formation of zinc sulfide thin films via the atomic laminating of components from a gas phase on single-crystal silicon substrates with (100), (110), and…”
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16
Atomic layer deposition of surface nanostructures of cadmium and zinc chalcogenides
Published in Inorganic materials : applied research (2015)“…The generalized results are presented on synthesis of ultrathin layers of zinc and cadmium chalcogenides by atomic layer deposition on the surface of silicon…”
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17
Formation and certain properties of zinc chalcogenide nanolayers on semiconductor matrices
Published in Russian microelectronics (2016)“…The generalized results on the synthesis of zinc chalcogenide ultrathin layers using an atomic layer deposition on the surface of silicon and A III B V…”
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18
Formation and dielectric properties of nanolayers of tantalum and aluminum oxides
Published in Russian microelectronics (2014)“…The results of investigations of processes for the formation of nanolayers of tantalum and aluminum oxides and multilayer compositions obtained by molecular…”
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19
Preparation of nanostructured silicon oxide and silicon nitride films using nanotechnologies
Published in Inorganic materials (01-09-2013)“…The synthesis of silicon oxide and silicon nitride surface nanostructures is used as an example to demonstrate the possibility of using correlation…”
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20
Chromium oxide nanolayers on gallium arsenide
Published in Inorganic materials (01-04-2006)“…Ultrathin chromium oxide layers (nanostructures) are grown on (100) and (110) GaAs substrates by molecular layering (atomic layer deposition). The effect of…”
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