Search Results - "Eyink, Kurt G"
-
1
Influence of Alumina Type on the Evolution and Activity of Alumina-Supported Fe Catalysts in Single-Walled Carbon Nanotube Carpet Growth
Published in ACS nano (23-02-2010)“…We have studied the lifetime, activity, and evolution of Fe catalysts supported on different types of alumina: (a) sputter deposited alumina films…”
Get full text
Journal Article -
2
Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
Published in Advanced materials (Weinheim) (01-10-2010)“…A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high‐quality and large‐area epitaxial graphene. This method…”
Get full text
Journal Article -
3
Single-walled carbon nanotube growth from liquid gallium and indium
Published in Carbon (New York) (01-11-2010)“…We present the first demonstration of single-walled carbon nanotube growth from liquid gallium and indium catalysts. The nanotubes were grown via thermal…”
Get full text
Journal Article -
4
Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEM
Published in Ultramicroscopy (01-04-2013)“…The strain distribution across interfaces in InAs/GaSb superlattices grown on (100)-GaSb substrates is investigated by aberration corrected transmission…”
Get full text
Journal Article -
5
Low temperature deposition of zinc oxide nanoparticles via zinc-rich vapor phase transport and condensation
Published in Journal of crystal growth (01-12-2010)“…ZnO nanoparticles as small as 80 nm were successfully synthesized using a modified vapor phase transport (VPT) process at substrate temperatures as low as 222…”
Get full text
Journal Article -
6
Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (001) using molecular beam epitaxy
Published in Journal of crystal growth (01-11-2017)“…•Hybrid nanostructures are desired for an enhanced optical response via plasmonic coupling.•Self-alignment of InAs QD and ErAs nanoparticle (NP) in one MBE…”
Get full text
Journal Article -
7
ErAsSb nanoparticle growth on GaAs surface by molecular beam epitaxy
Published in Journal of crystal growth (01-02-2016)“…ErAsSb nanoparticle (NP) growth is investigated on GaAs surface by molecular beam epitaxy. ErAsSb NP grown under Sb flux is compared to pure ErAs NP grown…”
Get full text
Journal Article -
8
Real-time monitoring and control of nitride growth rates by Metal Modulated Epitaxy
Published in Journal of crystal growth (01-07-2019)“…•Capability to monitor growth rate of III-Nitrides, by MBE, at any point during the growth of the film or device structure.•Innovative differential analysis…”
Get full text
Journal Article -
9
Nanoscale-Thick Thin Films of High-Density HfO2 for Bulk-like Optical Responses
Published in ACS applied nano materials (22-10-2021)“…The high refractive index, broadband transparency, and low spectral absorption of HfO2 (hafnia) make it a suitable choice for thermally stable nanoscale…”
Get full text
Journal Article -
10
Separate control of number density and size of ErAs nanoparticles by a modified diffusion length process using two flux conditions during molecular beam epitaxy
Published in Thin solid films (31-12-2019)“…•Nanoparticle growth process developed for independent control of density and size.•A large change in adatom diffusion length isolates nucleation and growth…”
Get full text
Journal Article -
11
Analysis of ErAs nanoparticle surface grown using a two-step modified diffusion length process
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-03-2021)“…Erbium arsenide nanoparticles (ErAs NPs) grown using a two-step modified diffusion length growth process are studied. The process consists of a low diffusion…”
Get full text
Journal Article -
12
-
13
Nucleation and quantum confinement of nano-platelet Bi2–Bi2Se3
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-2023)“…The nucleation, nano-platelet growth, and optical properties under quantum confinement are investigated in the topological semimetal superlattice Bi2–Bi2Se3 as…”
Get full text
Journal Article -
14
Epitaxial titanium nitride on sapphire: Effects of substrate temperature on microstructure and optical properties
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-2018)“…Titanium nitride (TiN) is a mechanically robust, high-temperature stable, metallic material receiving considerable attention for resilient plasmonics. In this…”
Get full text
Journal Article -
15
Nanoscale-Thick Thin Films of High-Density HfO 2 for Bulk-like Optical Responses
Published in ACS applied nano materials (22-10-2021)Get full text
Journal Article -
16
Band gap formation in graphene by in-situ doping
Published in Applied physics letters (16-05-2011)“…We report the formation of band gaps in as-grown stacks of epitaxial graphene with opposite doping. Control of in-situ doping during carbon source molecular…”
Get full text
Journal Article -
17
Combined in situ and ex situ analysis of hydrogen radical and thermal removal of native oxides from (001) GaAs
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-03-2005)“…We are currently involved in the study of regrowth of InAs on nanopatterned GaAs surfaces. The nanopatterning is accomplished through the movement of the…”
Get full text
Journal Article -
18
Saddle point singularity and optical phase transition in bilayer hyperbolic metamaterials
Published 15-12-2017“…We study theoretically and numerically high density of states for hyperbolic bilayered metamaterials (HMM). It reveals that density response of HMM is…”
Get full text
Journal Article -
19
Neural-net computing for interpretation of semiconductor film optical ellipsometry parameters
Published in IEEE transactions on neural networks (01-07-1996)“…Optical ellipsometry has been found to be a promising technique for monitoring process parameters, such as film composition and film thickness, of…”
Get full text
Journal Article -
20
In situ and ex situ spectroscopic investigation of low temperature grown gallium arsenide by molecular beam epitaxy
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-05-1996)“…Low temperature growth of GaAs not only provides useful semi‐insulating layers in a variety of devices, but also is interesting from a materials and crystal…”
Get full text
Conference Proceeding