Search Results - "Evtikhiev, V.P."

Surface Emitting Ring Quantum-cascade Lasers made by Focused Ion Beam Milling by Babichev, A.V., Mikhailov, D.A., Kolodeznyi, E.S., Gladyshev, A.G., Voznyuk, G.V., Mitrofanov, M.I., Slipchenko, S.O., Lyutetskii, A.V., Dudelev, V.V., Evtikhiev, V.P., Karachinsky, L. Ya, Novikov, I.I., Sokolovskii, G.S., Pikhtin, N.A., Egorov, A. Yu

“…The results on the fabrication and studies of ring quantum-cascade lasers with light output through a second-order diffraction grating are presented. The…”
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Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching by Mitrofanov, M. I., Levitskii, I. V., Voznyuk, G. V., Tatarinov, E. E., Rodin, S. N., Kaliteevski, M. A., Evtikhiev, V. P.

“…In the Si 3 N 4 layer, coaxial and single submicrometer GaN structures of hexagonal shape with pyramidal facets are formed by selective vapor-phase epitaxy in…”
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Fabrication and optical properties of porous InP structures by Atrashchenko, A.V., Katz, V.N., Ulin, V.P., Evtikhiev, V.P., Kochereshko, V.P.

“…Technology for the fabrication of a homogeneous array of pores in an A3B5 semiconductor matrix has been developed. Characterization with Scanning Electron…”
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Liquid-metal field electron source based on porous GaP by Masalov, S. A., Popov, E. O., Kolos’ko, A. G., Filippov, S. V., Ulin, V. P., Evtikhiev, V. P., Atrashchenko, A. V.

“…We have reported on a new method for obtaining a liquid-metal field emitter. The treatment of a porous crystal of GaP binary semiconducting compound with…”
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Focused ion beam as a tool for prototyping new designs of semiconductor lasers by Mitrofanov, M.I., Beckman, A.A., Kolodeznyi, E.S., Payusov, A.S., Voznyuk, G.V., Evtikhiev, V.P.

“…We demonstrate the application of direct focused ion beam lithography to realize various designs of optical elements for the modification optical parameters of…”
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Field injection of low-energy electrons into the ZnSe/CdSe/ZnSe heterostructure with the use of an ultra-high-vacuum tunneling microscope by Masalov, S. A., Kalinina, K. V., Evtikhiev, V. P., Ivanov, S. V.

“…The field emission injection of low-energy electrons ( E e ≈ 10 eV) into the ZnSe/CdSe/ZnSe heterostructure has been considered. The probe of the…”
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On the lifetime of charge carriers in quantum dots at low temperatures by Samosvat, D. M., Evtikhiev, V. P., Shkol’nik, A. S., Zegrya, G. G.

“…The nonequilibrium lifetime of charge carriers in a quantum dot has been experimentally and theoretically investigated. It has been shown that, at low…”
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Quantum-cascade laser with increased ring radius by Kolodeznyi, E.S., Babichev, A.V., Kharin, N.Yu, Gladyshev, A.G., Voznyuk, G.V., Mitrofanov, M.I., Slipchenko, S.O., Lyutetskii, A.V., Evtikhiev, V.P., Karachinsky, L.Ya, Novikov, I.I., Panevin, V.Yu, Pikhtin, N.A., Egorov, A.Yu

“…The lasing at 7.59 \mu \mathrm{m} wavelength was achieved in quantum-cascade surface emitting lasers with increased radius of ring cavity. The large mode…”
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Observations of self-organized InAs Nanoislands on GaAs (001) surface by electrosatic force microscopy by Girard, Pascal, Titkov, A.N., Ramonda, M., Evtikhiev, V.P., Ulin, V.P.

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Observations of self-organized InAs nanoislands on GaAs (0 0 1) surface by electrostatic force microscopy by Girard, P., Titkov, A.N., Ramonda, M., Evtikhiev, V.P., Ulin, V.P.

“…Ambient non-contact electrostatic force microscopy (EFM) experiments in the force and force gradient modes were carried out on InAs nanoislands, MBE-grown on a…”
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Photoluminescence study of AlGaAs/GaAs heterostructure subsequent to Ga+ focused ion beam etching by Voznyuk, G.V., Levitskii, I.V., Mitrofanov, M.I., Nikolaev, D.N., Evtikhiev, V.P.

“…The focused ion beam (FIB) is a potential tool in manufacturing microcircuit devices. The main downside of FIB etching process is radiation defects formation…”
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Effect of annealing FIB-induced defects in GaAs/AlGaAs heterostructure by Levitskii, I.V., Mitrofanov, M.I., Voznyuk, G.V., Nikolaev, D.N., Mizerov, M.N., Evtikhiev, V.P.

“…We present results of experiments concerning the loss of quantum efficiency of GaAs/AlGaAs heterostructure due to the focused ion beam-induced radiation…”
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Effect of GaAs(0 0 1) surface misorientation on the emission from MBE grown InAs quantum dots by Kudryashov, I.V, Evtikhiev, V.P, Tokranov, V.E, Kotel'nikov, E.Yu, Kryganovskii, A.K, Titkov, A.N

“…The photoluminescence (PL) is used to study the capped InAs quantum dot (QD) single sheet array MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to…”
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Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [0 1 0] direction by Evtikhiev, V.P., Tokranov, V.E., Kryganovskii, A.K., Boiko, A.M., Suris, R.A., Titkov, A.N.

“…Atomic-force microscopy is used to study InAs quantum dot arrays grown by molecular beam epitaxy on vicinal GaAs(0 0 1) surfaces misoriented to the [0 1 0]…”
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Ambient AFM observations of the crater formation in InAs quantum dots on GaAs (001) vicinal surfaces after evaporation in UHV by Nakamura, A., Titkov, A.N., Ichida, M., Evtikhiev, V.P., Kryganovskii, K.

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Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry by Evtikhiev, V. P., Kotel’nikov, E. Yu, Kudryashov, I. V., Tokranov, V. E., Faleev, N. N.

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Field Electron Emission from GaAs Nanowhiskers Fabricated by MBE by Ptitsin, V.E., Cirlin, G.E., Dubrovskii, V.G., Evtikhiev, V.P., Masalov, S.A., Samsonenko, Yu.B., Tonkikh, A.A.

“…This paper investigated the electron emission properties of self-assembled GaAs nanowhiskers (NWs) grown by MBE which includes electron emission current,…”
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Performance of 980 nm pump laser diodes with GaAs/AlAs graded short period superlattice waveguides by Evtikhiev, V.P., Kudryashov, I.V., Tokranov, V.E., Yu, J.S., Yang, S.K., Pak, G., Kim, T.I.

“…Short period superlattices (SPSs) allow precise control of epitaxial layers and the material quality is generally superior to the equivalent solid solution…”
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Theoretical and experimental study of the effect of carrier relaxation on threshold and power-current characteristics of quantum well lasers by Zegrya, G.G., Bazhenov, N.L., Dorofeyev, D.V., Evtikhiev, V.P., Kotelnikov, E.Yu, Mynbaev, K.D., Solovyev, I.Yu, Shkolnik, A.S.

“…In this paper, the effect of intraband relaxation processes of non-equilibrium carriers on the threshold and power-current characteristics of quantum-well…”
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