Search Results - "Evseev, S.B."

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  1. 1

    Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses by Evseev, S.B., Nanver, L.K., Rejaei, B., Milosavljević, S.

    Published in Microelectronic engineering (01-08-2014)
    “…[Display omitted] •An alternative thermally-stable RF passivation method is presented.•The method relies on placing the surface currents in a high resistive…”
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    Journal Article Conference Proceeding
  2. 2

    Eyring acceleration model in thick nitride/oxide dielectrics by Evseev, S.B.

    Published in Microelectronics and reliability (01-04-2007)
    “…A kinetic model is developed, which can predict failure times in thick nitride/oxide dielectric stacks at elevated temperatures. It is shown that failure time…”
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    Journal Article Conference Proceeding
  3. 3

    Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates by Evseev, S.B., Nanver, L.K., Milosavljevic, S.

    “…Ring-gate MOSFET test structures have been developed with which a differential measurement technique can be used to accurately determine the…”
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    Conference Proceeding