Detection methods of intense areas and identification of the reasons of HEMT transistors failure

The article presents the options combination of etching and atomic force microscopy for research work and the failed high electron mobility transistors, as well as in the conduct of the capacitance-voltage profiling.

Bibliographic Details

Published in:	2017 11th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMCCompo) pp. 112 - 114
Main Authors:	Permiakov, Nikita V., Evseenkov, Anton S., Tarasov, Sergey A., Solomonov, Alexander V., Moshnikov, Vyacheslav A., Lamkin, Ivan A.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-07-2017
Subjects:	AFM Capacitance-voltage characteristics Electric breakdown Etching HEMT Microwave amplifiers PHEMTs SPM
Online Access:	Get full text
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