Search Results - "Evropeytsev, E.A"

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    MBE growth, structural and transport properties of alternately-strained ZnSSe/CdSe superlattices with effective band-gap 2.5–2.6 eV by Sorokin, S.V., Gronin, S.V., Evropeytsev, E.A., Sedova, I.V., Toropov, A.A., Ivanov, S.V.

    Published in Journal of crystal growth (01-09-2015)
    “…Short-period ZnSySe1−y/CdSe superlattices (SLs) with an effective energy gap Eg=2.5–2.6eV (T=300K) are grown by molecular beam epitaxy pseudomorphically on…”
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    Journal Article
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    Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands by Evropeytsev, E. A., Semenov, A. N., Nechaev, D. V., Jmerik, V. N., Kaibyshev, V. Kh, Troshkov, S. I., Brunkov, P. N., Usikova, A. A., Ivanov, S. V., Toropov, A. A.

    Published in Semiconductors (Woodbury, N.Y.) (01-05-2018)
    “…We report on fabrication and studies of composite heterostuctures consisting of an Al 0.55 Ga 0.45 N/A l0.8 Ga 0.2 N quantum well and surface Al nanoislands,…”
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    Journal Article
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    Transport parameters and optical properties of selectively doped GaSe heterovalent structures with a two-dimensional hole channel by Evropeytsev, E.A, Klimko, G.V, Komissarova, T.A, Sedova, I.V, Sorokin, S.V, Gronin, S.V, Kazantsev, D. Yu, Ber, B. Ya, Ivanov, S.V, Toropov, A.A

    Published in Semiconductors (Woodbury, N.Y.) (01-01-2014)
    “…The growth of III--V/II--VLMn heterostructures with a high hole concentration in the AlGaAs:Be/GaAs/AlGaAs 2D channel situated in the immediate vicinity of the…”
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    Journal Article
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