Search Results - "Evropeytsev, E.A"
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MBE growth, structural and transport properties of alternately-strained ZnSSe/CdSe superlattices with effective band-gap 2.5–2.6 eV
Published in Journal of crystal growth (01-09-2015)“…Short-period ZnSySe1−y/CdSe superlattices (SLs) with an effective energy gap Eg=2.5–2.6eV (T=300K) are grown by molecular beam epitaxy pseudomorphically on…”
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Emission-Line Width and [alpha]-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells
Published in Semiconductors (Woodbury, N.Y.) (01-01-2018)“…The emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the…”
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Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands
Published in Semiconductors (Woodbury, N.Y.) (01-05-2018)“…We report on fabrication and studies of composite heterostuctures consisting of an Al 0.55 Ga 0.45 N/A l0.8 Ga 0.2 N quantum well and surface Al nanoislands,…”
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Structural and Optical Properties of Alternately-Strained ZnS x Se 1-x /CdSe Superlattices with Effective Band-Gap 2.5-2.6 eV
Published in Acta physica Polonica, A (01-11-2014)Get full text
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CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy
Published in Acta physica Polonica, A (01-11-2014)Get full text
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Transport parameters and optical properties of selectively doped GaSe heterovalent structures with a two-dimensional hole channel
Published in Semiconductors (Woodbury, N.Y.) (01-01-2014)“…The growth of III--V/II--VLMn heterostructures with a high hole concentration in the AlGaAs:Be/GaAs/AlGaAs 2D channel situated in the immediate vicinity of the…”
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Optical and Structural Properties of GaAs/AlGaAs Quantum Wells Grown by MBE in the Vicinity of As-Rich-GaAs/ZnSe Heterovalent Interface
Published in Acta physica Polonica, A (01-11-2014)Get full text
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