Search Results - "Evropeytsev, E. A."

The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions by Kazanov, D. R., Evropeytsev, E. A., Shubina, T. V.

“…We have studied optical properties of site-controlled GaN nanocolumns (NCs) with an insertion of InGaN QW grown on the micro-cone patterned substrate…”
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AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm by Toropov, A. A., Shevchenko, E. A., Shubina, T. V., Jmerik, V. N., Nechaev, D. V., Evropeytsev, E. A., Kaibyshev, V. Kh, Pozina, G., Rouvimov, S., Ivanov, S. V.

“…We present theoretical optimization of the design of a quantum well (QW) heterostructure based on AlGaN alloys, aimed at achievement of the maximum possible…”
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Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures by Toropov, A. A., Evropeytsev, E. A., Sorokin, S. V., Klimko, G. V., Gronin, S. V., Sedova, I. V., Kalinovskii, V. S., Kontrosh, E. V., Usikova, A. A., Il'inskaya, N. D., Ivanov, S. V.

“…We present original design and performance simulations of four‐junction heterovalent concentrator solar cells with monolithically integrated junctions based on…”
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Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands by Evropeytsev, E. A., Semenov, A. N., Nechaev, D. V., Jmerik, V. N., Kaibyshev, V. Kh, Troshkov, S. I., Brunkov, P. N., Usikova, A. A., Ivanov, S. V., Toropov, A. A.

“…We report on fabrication and studies of composite heterostuctures consisting of an Al 0.55 Ga 0.45 N/A l0.8 Ga 0.2 N quantum well and surface Al nanoislands,…”
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Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells by Blokhin, S. A., Bobrov, M. A., Blokhin, A. A., Kuzmenkov, A. G., Vasil’ev, A. P., Zadiranov, Yu. M., Evropeytsev, E. A., Sakharov, A. V., Ledentsov, N. N., Karachinsky, L. Ya, Ospennikov, A. M., Maleev, N. A., Ustinov, V. M.

“…The emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the…”
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MBE growth, structural and transport properties of alternately-strained ZnSSe/CdSe superlattices with effective band-gap 2.5-2.G eV by Sorokin, S V, Gronin, S V, Evropeytsev, E A, Sedova, I V, Toropov, A A, Ivanov, S V

“…Short-period ZnS sub(y)Se sub(1-y)/CdSe superlattices (SLs) with an effective energy gap E sub(g)=25-2.6 eV (T=300 K) are grown by molecular beam epitaxy…”
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Investigation of the Spectrum of Exciton Excited States in Self-Organized InAs/AlGaAs Quantum Dots by Galimov, A., Rakhlin, M., Belyaev, K., Klimko, G., Evropeytsev, E., Toropov, A.

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MBE growth, structural and transport properties of alternately-strained ZnSSe/CdSe superlattices with effective band-gap 2.5–2.6 eV by Sorokin, S.V., Gronin, S.V., Evropeytsev, E.A., Sedova, I.V., Toropov, A.A., Ivanov, S.V.

“…Short-period ZnSySe1−y/CdSe superlattices (SLs) with an effective energy gap Eg=2.5–2.6eV (T=300K) are grown by molecular beam epitaxy pseudomorphically on…”
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Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures: Four-junction heterovalent solar cells by Toropov, A. A., Evropeytsev, E. A., Sorokin, S. V., Klimko, G. V., Gronin, S. V., Sedova, I. V., Kalinovskii, V. S., Kontrosh, E. V., Usikova, A. A., Il'inskaya, N. D., Ivanov, S. V.

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Optical studies of carriers’ vertical transport in the alternately-strained ZnS0.4Se0.6/CdSe superlattice by Evropeytsev, E. A., Sorokin, S. V., Gronin, S. V., Sedova, I. V., Klimko, G. V., Ivanov, S. V., Toropov, A. A.

“…We present the results of theoretical modelling and experimental optical studies of the alternatively-strained CdSe/ZnS y Se 1 − y ( y = 0.4) superlattice (SL)…”
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Optical studies of carriers’ vertical transport in the alternately-strained ZnS{sub 0.4}Se{sub 0.6}/CdSe superlattice by Evropeytsev, E. A., Sorokin, S. V., Gronin, S. V., Sedova, I. V., Klimko, G. V., Ivanov, S. V., Toropov, A. A.

“…We present the results of theoretical modelling and experimental optical studies of the alternatively-strained CdSe/ZnS{sub y}Se{sub 1−y} (y = 0.4)…”
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CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy by Gronin, S.V., Sorokin, S.V., Kazanov, D.R., Sedova, I.V., Klimko, G.V., Evropeytsev, E.A., Ivanov, S.V.

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Optical and Structural Properties of GaAs/AlGaAs Quantum Wells Grown by MBE in the Vicinity of As-Rich-GaAs/ZnSe Heterovalent Interface by Klimko, G.V., Evropeytsev, E.A., Sitnikova, A.A., Gronin, S.V., Sedova, I.V., Sorokin, S.V., Ivanov, S.V.

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Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel by Evropeytsev, E. A., Klimko, G. V., Komissarova, T. A., Sedova, I. V., Sorokin, S. V., Gronin, S. V., Kazantsev, D. Yu, Ber, B. Ya, Ivanov, S. V., Toropov, A. A.

“…The growth of III–V/II–VI:Mn heterostructures with a high hole concentration in the AlGaAs:Be/GaAs/AlGaAs 2D channel situated in the immediate vicinity of the…”
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