Search Results - "Evangelou, Evangelos K."

Noise investigation in a spin-based four-qubit GaAs block of self-assembled quantum dots by Prousalis, Konstantinos, Iliadis, Agis A., Evangelou, Evangelos K., Konofaos, Nikos

“…Optically controlled self-assembled quantum dots have received substantial attention in the quantum computing area, as techniques for initializing,…”
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Carbon Nanodots as Electron Transport Materials in Organic Light Emitting Diodes and Solar Cells by Georgiopoulou, Zoi, Verykios, Apostolis, Ladomenou, Kalliopi, Maskanaki, Katerina, Chatzigiannakis, Georgios, Armadorou, Konstantina-Kalliopi, Palilis, Leonidas C, Chroneos, Alexander, Evangelou, Evangelos K, Gardelis, Spiros, Yusoff, Abd Rashid Bin Mohd, Coutsolelos, Athanassios G, Aidinis, Konstantinos, Vasilopoulou, Maria, Soultati, Anastasia

“…Charge injection and transport interlayers play a crucial role in many classes of optoelectronics, including organic and perovskite ones. Here, we demonstrate…”
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Correlation of Charge Buildup and Stress-Induced Leakage Current in Cerium Oxide Films Grown on Ge (100) Substrates by Evangelou, E.K., Rahman, M.S., Dimoulas, A.

“…High-kappa films are currently deposited on Ge substrates to compensate the mobility loss, as Ge offers higher mobility compared with that of silicon. This…”
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Suppressing the Photocatalytic Activity of Zinc Oxide Electron-Transport Layer in Nonfullerene Organic Solar Cells with a Pyrene-Bodipy Interlayer by Soultati, Anastasia, Verykios, Apostolis, Panagiotakis, Stylianos, Armadorou, Konstantina-Kalliopi, Haider, Muhammad Irfan, Kaltzoglou, Andreas, Drivas, Charalampos, Fakharuddin, Azhar, Bao, Xichang, Yang, Chunming, Yusoff, Abd. Rashid bin Mohd, Evangelou, Evangelos K, Petsalakis, Ioannis, Kennou, Stella, Falaras, Polycarpos, Yannakopoulou, Konstantina, Pistolis, George, Argitis, Panagiotis, Vasilopoulou, Maria

“…Organic solar cells based on nonfullerene acceptors have recently witnessed a significant rise in their power conversion efficiency values. However, they still…”
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The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric by Boni, Georgia Andra, Istrate, Cosmin M., Zacharaki, Christina, Tsipas, Polychronis, Chaitoglou, Stefanos, Evangelou, Evangelos K., Dimoulas, Athanasios, Pintilie, Ioana, Pintilie, Lucian

“…The discovery of ferroelectricity in doped HfO2 represents an excellent opportunity to overcome the obstacles in manufacturing reliable ferroelectric field…”
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Engineering of Porphyrin Molecules for Use as Effective Cathode Interfacial Modifiers in Organic Solar Cells of Enhanced Efficiency and Stability by Tountas, Marinos, Verykios, Apostolis, Polydorou, Ermioni, Kaltzoglou, Andreas, Soultati, Anastasia, Balis, Nikolaos, Angaridis, Panagiotis A, Papadakis, Michael, Nikolaou, Vasilis, Auras, Florian, Palilis, Leonidas C, Tsikritzis, Dimitris, Evangelou, Evangelos K, Gardelis, Spyros, Koutsoureli, Matroni, Papaioannou, George, Petsalakis, Ioannis D, Kennou, Stella, Davazoglou, Dimitris, Argitis, Panagiotis, Falaras, Polycarpos, Coutsolelos, Athanassios G, Vasilopoulou, Maria

“…In the present work, we effectively modify the TiO2 electron transport layer of organic solar cells with an inverted architecture using appropriately…”
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Dielectric Relaxation and Charge Trapping Characteristics Study in Germanium Based MOS Devices With HfO2/Dy2O3 Gate Stacks by SHAHINUR RAHMAN, Md, EVANGELOU, Evangelos K

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The urge for GREEN IT courses at universities and technical institutes by Evangelou, Evangelos K., Pagge, Jenny

“…Humans are responsible for the dramatic climate change, the energy crisis, the misuse of useful materials and the pollution of the planet with hazardous…”
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The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf 0.5 Zr 0.5 O 2 Ferroelectric by Boni, Georgia Andra, Istrate, Cosmin M., Zacharaki, Christina, Tsipas, Polychronis, Chaitoglou, Stefanos, Evangelou, Evangelos K., Dimoulas, Athanasios, Pintilie, Ioana, Pintilie, Lucian

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Dielectric Relaxation and Charge Trapping Characteristics Study in Germanium Based MOS Devices With hbox HfO 2 / hbox Dy 2 hbox O 3 Gate Stacks by Rahman, MdShahinur, Evangelou, Evangelos K

“…In this paper, we investigate the dielectric relaxation effects and charge-trapping characteristics of hbox HfO 2 / hbox Dy 2 hbox O 3 gate stacks grown on Ge…”
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Dielectric Relaxation and Charge Trapping Characteristics Study in Germanium Based MOS Devices With [Formula Omitted] Gate Stacks by Rahman, Md. Shahinur, Evangelou, Evangelos K

“…In this paper, we investigate the dielectric relaxation effects and charge-trapping characteristics of [Formula Omitted] gate stacks grown on Ge substrates…”
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Dielectric Relaxation and Charge Trapping Characteristics Study in Germanium Based MOS Devices With \hbox/\hbox\hbox Gate Stacks by Rahman, Md S., Evangelou, E. K.

“…In this paper, we investigate the dielectric relaxation effects and charge-trapping characteristics of HfO 2 /Dy 2 O 3 gate stacks grown on Ge substrates. The…”
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Negative Quantum Capacitance Effects in Metal-Insulator-Semiconductor Devices with Composite Graphene-Encapsulated Gates by Tsipas, Polychronis, Giamini, Sigiava Aminalragia, Marquez-Velasco, Jose, Kelaidis, Nikolaos, Tsoutsou, Dimitra, Aretouli, Kleopatra E., Xenogiannopoulou, Evangelia, Evangelou, Evangelos K., Dimoulas, Athanasios

“…Metal–insulator–semiconductor devices with composite graphene‐encapsulated gates are grown on p‐ and n‐Si substrates. Capacitance–voltage (C–V) measurements…”
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Quantum Capacitance: Negative Quantum Capacitance Effects in Metal-Insulator-Semiconductor Devices with Composite Graphene-Encapsulated Gates (Adv. Electron. Mater. 4/2016) by Tsipas, Polychronis, Giamini, Sigiava Aminalragia, Marquez-Velasco, Jose, Kelaidis, Nikolaos, Tsoutsou, Dimitra, Aretouli, Kleopatra E., Xenogiannopoulou, Evangelia, Evangelou, Evangelos K., Dimoulas, Athanasios

“…In article number 1500297, P. Tsipas et al. present evidence that graphene incorporated into the gate of metal‐insulator‐semiconductor devices enhances the…”
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Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates by Rahman, Md. Shahinur, Evangelou, Evangelos K, Konofaos, Nikos, Dimoulas, A

“…We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high…”
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Electrical reliability characteristics and dielectrics degradation in gate stacks (REO-HfO2) grown on the high mobility Ge substrates by Rahman, M. S., Evangelou, E. K., Konofaos, N., Dimoulas, A.

“…Gate stacks (rare-earth oxides, REOs-HfO 2 ) grown on Germanium substrates using REOs (e.g. CeO 2 , Dy 2 O 3 , La 2 O 3 ) as an interfacial buffer layer which…”
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