Search Results - "Eung Taek Kim"

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  1. 1
    A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C - V Characteristics in Exfoliated MoS2 FET

    A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C - V Characteristics in Exfoliated MoS2 FET by Hagyoul Bae, Choong-Ki Kim, Seung-Bae Jeon, Gwang Hyuk Shin, Eung Taek Kim, Jeong-Gyu Song, Youngjun Kim, Dong-Il Lee, Hyungjun Kim, Sung-Yool Choi, Kyung Cheol Choi, Yang-Kyu Choi

    Published in IEEE electron device letters (01-02-2016)
    “…Asymmetric source and drain (S/D) series resistances (R S and R D ) are unavoidable in exfoliated MoS 2 field-effect transistors (EM-FETs). Through combining…”
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  2. 2
    A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C-V Characteristics in Exfoliated MoS 2 FET

    A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C-V Characteristics in Exfoliated MoS 2 FET by Hagyoul Bae, Choong-Ki Kim, Seung-Bae Jeon, Gwang Hyuk Shin, Eung Taek Kim, Jeong-Gyu Song, Youngjun Kim, Dong-Il Lee, Hyungjun Kim, Sung-Yool Choi, Kyung Cheol Choi, Yang-Kyu Choi

    Published in IEEE electron device letters (01-02-2016)
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  3. 3
    A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive [Formula Omitted]-[Formula Omitted] Characteristics in Exfoliated MoS2 FET

    A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive [Formula Omitted]-[Formula Omitted] Characteristics in Exfoliated MoS2 FET by Bae, Hagyoul, Kim, Choong-Ki, Seung-Bae Jeon, Shin, Gwang Hyuk, Eung Taek Kim, Jeong-Gyu Song, Kim, Youngjun, Lee, Dong-Il, Kim, Hyungjun, Sung-Yool Choi, Choi, Kyung Cheol, Yang-Kyu, Choi

    Published in IEEE electron device letters (01-02-2016)
    “…Asymmetric source and drain (S/D) series resistances ([Formula Omitted] and [Formula Omitted]) are unavoidable in exfoliated MoS2 field-effect transistors…”
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