Search Results - "Escobosa Echavarría, A."

Growth mechanism and physical properties of the type-I In0.145Ga0.855AsySb1−y/GaSb alloys with low As content for near infrared applications by Casallas-Moreno, Y.L., Villa-Martínez, G., Ramírez-López, M., Rodríguez-Fragoso, P., Gómez-Herrera, M.L., Pérez-González, M., Escobosa-Echavarría, A., Tomás, S.A., Herrera-Pérez, J.L., Mendoza-Álvarez, J.G.

“…In0.145Ga0.855AsySb1−y semiconductor alloys were grown on GaSb(100) substrates by varying the As content by liquid phase epitaxy (LPE). We demonstrated that…”
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CO2 gas sensing properties of ZnO nanorods: comparison of seed layer deposition temperature by Hernandez, A. G., Karthik, T. V. K., Gómez-Pozos, H., Escobosa-Echavarría, A.

“…In this work, ZnO nanorods were grown by chemical bath deposition technique on substrates which were previously deposited with ZnO seed layers (SL’s). The seed…”
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Effects of Mg incorporation in cubic GaN films grown by PAMBE near Ga rich conditions by Compeán-García, V.D., Moreno-García, H., López-Luna, E., Pérez Ladrón de Guevara, H., Escobosa Echavarría, A., Kudriavtsev, Y., Rodríguez-Aranda, F.J., Rodríguez, A.G., Vidal, M.A.

“…The structural and electrical properties of Mg-doped cubic GaN epi-layers grown by plasma-assisted molecular beam epitaxy (PAMBE) near Ga rich conditions are…”
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High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation by Compeán García, V. D., Orozco Hinostroza, I. E., Escobosa Echavarría, A., López Luna, E., Rodríguez, A. G., Vidal, M. A.

“…High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane…”
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A new method of making ohmic contacts to p-GaN by Hernández-Gutierrez, C.A., Kudriavtsev, Yu, Mota, Esteban, Hernández, A.G., Escobosa-Echavarría, A., Sánchez-Resendiz, V., Casallas-Moreno, Y.L., López-López, M.

“…•Low resistance Ohmic contacts preparation is based on low energy high dose In+ ion implantation into Metal/p-GaN to achieve a thin layer of InxGa1-xN just at…”
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Nanoscopic analysis of rapid thermal annealing effects on InGaN grown over Si(111) by Martínez-Revuelta, Rubén, Hernández-Gutiérrez, Carlos A., Escobosa-Echavarría, A., Vargas Carosi, Beatriz, Peiró, Francesca, López-López, Máximo

“…This study explores the impact of rapid thermal annealing (RTA) on InxGa1-xN grown over Si(111) by molecular beam epitaxy (MBE). Through X-ray diffraction…”
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Performance evaluation of an architecture for the characterisation of photo-devices: design, fabrication and test on a CMOS technology by Castillo-Cabrera, G., García-Lamont, J., Reyes-Barranca, M.A., Moreno-Cadenas, J.A., Escobosa-Echavarría, A.

“…In this report, the performance of a particular pixel's architecture is evaluated. It consists mainly of an optical sensor coupled to an amplifier. The circuit…”
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Annealing Impact on Emission of InAs Quantum Dots in GaAs/Al0.30Ga0.70As Structures with Different Capping Layers by Torchynska, T. V., Tamayo, R. Cisneros, Polupan, G., Moreno, I. J. Guerrero, Echavarria, A. Escobosa

“…The impact of annealing on the emission of InAs quantum dots (QDs) has been investigated in the GaAs/Al 0.30 Ga 0.70 As structures with different compositions…”
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On the delta-type doping of GaAs-based heterostructures with manganese compounds by Moiseev, K. D., Nevedomsky, V. N., Kudriavtsev, Yu, Escobosa-Echavarria, A., Lopez-Lopez, M.

“…Heterostructures, which incorporate GaAs/InGaAs/GaAs quantum wells and are doped with spatially remote monatomic Mn layers, are formed on GaAs(001) substrate…”
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As4 overpressure effects on the phase purity of cubic GaN layers grown on GaAs substrates by RF-MBE by Casallas-Moreno, Y.L., Gallardo-Hernández, S., Ruiz-Zepeda, F., Monroy, B.M., Hernández-Hernández, A., Herrera-Gómez, A., Escobosa-Echavarría, A., Santana, G., Ponce, A., López-López, M.

“…•Cubic GaN samples were grown on GaAs(001) substrates by using an As4 overpressure during the nucleation layer.•The relaxation process of c-GaN affects the…”
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Self-assembly of compositionally modulated Ga1−xMnxAs multilayers during molecular beam epitaxy by Gallardo-Hernández, S., Martinez-Velis, I., Ramirez-Lopez, M., Kudriatsev, Y., Escobosa-Echavarria, A., Luiz Morelhao, S., Lopez-Lopez, M.

“…GaMnAs structures were grown on GaAs(100) substrates by molecular beam epitaxy employing different growth parameters. We studied manganese incorporation…”
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Growth mechanism and physical properties of the type-I In0.145Ga0.855As Sb1−y/GaSb alloys with low As content for near infrared applications by Casallas-Moreno, Y.L., Villa-Martínez, G., Ramírez-López, M., Rodríguez-Fragoso, P., Gómez-Herrera, M.L., Pérez-González, M., Escobosa-Echavarría, A., Tomás, S.A., Herrera-Pérez, J.L., Mendoza-Álvarez, J.G.

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Bulk lattice parameter and band gap of cubic InXGa1−XN (001) alloys on MgO (100) substrates by Compeán García, V.D., Orozco Hinostroza, I.E., Escobosa Echavarría, A., López Luna, E., Rodríguez, A.G., Vidal, M.A.

“…InxGa1−xN (001) ternary alloys were grown on GaN/MgO (100) substrates in a plasma assisted molecular beam epitaxy system. We determined the in-plane [001] and…”
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AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots by Cisneros Tamayo, R., Polupan, G., Torchynska, T.V., Vega-Macotela, L.G., Stintz, A., Escobosa Echavarria, A.

“…Three types of GaAs/Al0.30Ga0.70As quantum wells (QWs) with InAs quantum dots (QDs) cavered by the different capping layers: GaAs (#1), Al0.30Ga0.70As (#2) and…”
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Bulk lattice parameter and band gap of cubic In sub(x)Ga sub(1-x)N (001) alloys on MgO (100) substrates by Garcia, V D Compean, Hinostroza, I E Orozco, Echavarria, A Escobosa, Luna, E Lopez, Rodriguez, A G, Vidal, M A

“…In sub(x)Ga sub(1-x)N (001) ternary alloys were grown on GaN/MgO (100) substrates in a plasma assisted molecular beam epitaxy system. We determined the…”
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Self-assembly of compositionally modulated Ga{sub 1−x}Mn{sub x}As multilayers during molecular beam epitaxy by Gallardo-Hernández, S., Martinez-Velis, I., Ramirez-Lopez, M., Lopez-Lopez, M., Kudriatsev, Y., Escobosa-Echavarria, A., Luiz Morelhao, S.

“…GaMnAs structures were grown on GaAs(100) substrates by molecular beam epitaxy employing different growth parameters. We studied manganese incorporation…”
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Optical characterization of integrated P+/N-Well/P-substrate and N-Well/P-substrate photo-device structures on CMOS technology by Castillo-Cabrera, G, Garcia-Lamont, J, Reyes-Barranca, M A, Moreno-Cadenas, J A, Escobosa-Echavarria, A

“…Here, a characterization methodology for integrated silicon-based photo-devices is presented. Devices are phototransistors ("P+/N-Well/P-substrate") and…”
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Emission and HR-XRD study of MBE structures with InAs quantum dots and AlGaInAs strain reducing layers by Torchynska, T., Cisneros-Tamayo, R., Vega-Macotela, L., Polupan, G., Escobosa-Echavarria, A.

“…GaAs/Al0.30Ga0.70As quantum wells (QWs) with InAs quantum dot (QD) arrays covered by the different capping layers: Al0.30Ga0.70As or Al0.1Ga0.75In0.15As, have…”
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Performance evaluation of an architecture for the characterisation of photo-devices: design, fabrication and test on a CMOS technology by CASTILLO-CABRERA, G, GARCIA-LAMONT, J, REYES-BARRANCA, M. A, MORENO-CADENAS, J. A, ESCOBOSA-ECHAVARRIA, A

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