Search Results - "Ermolovich, I. B."

On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts by DMITRUK, N. L, ERMOLOVICH, I. B, IVANOV, V. N, KONAKOVA, R. V, LYTVYN, O. S, LYTVYN, P. M, MILENIN, V. V, PROKOPENKO, I. V, VENGER, E. F, VOITSIKHOVSKYI, D. I, BOLTOVETS, N. S

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Analytical, optical and electrophysical investigations of TiBx–GaAs interface by Dmitruk, N.L, Ermolovich, I.B, Fursenko, O.V, Konakova, R.V, Milenin, V.V, Voitsikhovskyi, D.I, Yastrubchak, O.B

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The effect of composition on the properties and defect structure of the CdS-Ga2S3 solid solution by Venger, E. F., Ermolovich, I. B., Milenin, V. V., Papusha, V. P.

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Nature of the transitional region during the deposition of titanium boride and nitride films on gallium arsenide by Ermolovich, I. B., Konakova, R. V., Milenin, V. V., Senkevich, A. I.

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Influence of microwave treatment on the electrophysical characteristics of technically important semiconductors and surface-barrier structures by Belyaev, A. A., Belyaev, A. E., Ermolovich, I. B., Komirenko, S. M., Konakova, R. V., Lyapin, V. G., Milenin, V. V., Solov’ev, E. A., Shevelev, M. V.

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The formation and thermal stability of multilayer ohmic contacts to n-GaAs with TiBx and Mo diffusion barriers by Milenin, V. V., Konakova, R. V., Ivanov, V. N., Beketov, G. V., Poludin, V. I., Ermolovich, I. B.

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Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide by Venger, E. F., Milenin, V. V., Ermolovich, I. B., Konakova, R. V., Ivanov, V. N., Voitsikhovskii, D. I.

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Effect of ultrasonic treatment on deformation effects and the structure of local centers in the substrate and in the contact regions of M/n−n +-GaAs structures (M=Pt, Cr, W) by Ermolovich, I. B., Milenin, V. V., Konakova, R. V., Primenko, L. N., Prokopenko, I. V., Gromashevskii, V. L.

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Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing by Ermolovich, I. B., Milenin, V. V., Red’ko, R. A., Red’ko, S. M.

“…The steady-state and kinetic characteristics of photoconductivity and photoluminescence and the thermally stimulated conductivity spectra of the GdTe layers…”
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Modification of the defect structure in binary semiconductors under the action of microwave radiation by Ermolovich, I. B., Milenin, G. V., Milenin, V. V., Konakova, R. V., Red’ko, R. A.

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Effect of γ radiation from 60Co on the formation of metal contacts to GaAs (AlxGa1−x As) structures by Borkovskaya, O. Yu, Dmitruk, N. L., Ermolovich, I. B., Konakova, R. V., Milenin, V. V.

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Properties of Al, (AuGe)-GaAs contacts fabricated by combining ion-beam treatment and metallization by Ermolovich, I. B., Il’in, I. Yu, Konakova, R. V., Milenin, V. V.

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Analytical, optical and electrophysical investigations of TiBx-GaAs interface by DMITRUK, N. L, ERMOLOVICH, I. B, FURSENKO, O. V, KONAKOVA, R. V, MILENIN, V. V, VOITSIKHOVSKYI, D. I, YASTRUBCHAK, O. B

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Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide by Venger, Ye. F.

“…For contacts prepared from titanium boride and nitride ion-plasma sputtering onto gallium arsenide, both formation mechanisms and thermal stability were…”
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Cation d-shell splitting in zinc and cadmium chalcogenides by Ermolovich, I. B., Milenin, V. V.

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