Search Results - "Erhardt, L.S."

High-energy proton irradiation effects in GaAs devices by Warner, J.H., Walters, R.J., Messenger, S.R., Summers, G.P., Khanna, S.M., Estan, D., Erhardt, L.S., Houdayer, A.

“…In this paper, we compare the energy dependences (53 and 115 MeV) of proton displacement damage coefficients for p/sup +/n GaAs solar cells with previously…”
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Proton energy dependence of the light output in gallium nitride light-emitting diodes by Khanna, S.M., Estan, D., Erhardt, L.S., Houdayer, A., Carlone, C., Ionascut-Nedelcescu, A., Messenger, S.R., Walters, R.J., Summers, G.P., Warner, J.H., Insoo Jun

“…Gallium nitride (GaN)-based blue-emitting diodes (CREE Model C430-DH85) were irradiated at room temperature with protons in the energy range 2 to 115 MeV at…”
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Correlation of proton radiation damage in InGaAs-GaAs quantum-well light-emitting diodes by Walters, R.J., Messenger, S.R., Summers, G.P., Burke, E.A., Khanna, S.M., Estan, D., Erhardt, L.S., Hui Chun Liu, Mae Gao, Buchanan, M., SpringThorpe, A.J., Houdayer, A., Carlone, C.

“…The effect of proton irradiation of InGaAs/GaAs quantum-well (QW) light-emitting diodes (LEDs) has been studied at energies ranging from 1 to 500 MeV in order…”
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Gamma enhancement of proton-induced SEE cross section in a CMOS SRAM by Erhardt, L.S., Haslip, D.S., Cousins, T., Buhr, R., Estan, D.

“…CMOS SRAM parts (NEC 431000ACZ-70L) were tested for possible combined effects of gamma and proton irradiation. The parts were irradiated with a /sup 60/Co…”
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Transition-edge microcalorimeter for tritium beta decay by Erhardt, L.S, Deptuck, D, Harrison, J.P

“…We are conducting a new tritium beta-decay experiment using a cryogenic microcalorimeter. The microcalorimeter consists of a copper foil with an implanted…”
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Achievable neutrino mass limits from calorimetric beta spectroscopy by Deptuck, D, Erhardt, L.S, Harrison, J.P

“…Our current research program aims to measure the mass of the electron antineutrino by its effect on the shape of the tritium beta decay spectrum near the end…”
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High energy proton irradiation effects in GaAs devices by Warner, J.H., Walters, R.J., Messenger, S.R., Summers, G.P., Khanna, S.M., Estan, D., Erhardt, L.S., Houdayer, A.

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Proton energy dependence of the light output in gallium nitride light emitting diodes by Khanna, S.M., Estan, D., Erhardt, L.S., Houdayer, A., Carlone, C., lonascut Nedelcescu, A., Messenger, S.R., Walters, R.J., Surnmers, G.P., Warner, J.H., Insoo Jun

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