Search Results - "Equer, B."

Anisotropic magnetic centres in hydrogenated microcrystalline and polymorphous silicon by Morigaki, K, Niikura, C, Bourée, J.E, Equer, B

“…Anisotropic magnetic centres in hydrogenated microcrystalline and polymorphous silicon have been observed in electron spin resonance spectra. The nature of…”
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High electric field forming of a-Si:H p-i-n diodes by Equer, B., Ilie, A.

“…A metastable evolution of a-Si:H p-i-n diodes submitted to a high reverse bias for a long period of time was observed. This forming process leads to a…”
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In-situ Kelvin probe and ellipsometry study of the doping of a-Si : H and a-SiC : H layers: : Correlation with solar cell parameters by Hadjadj, A, Favre, M, Equer, B, Roca i Cabarrocas, P

“…To underscore the effects of boron doping on the photovoltaic characteristics of a-Si : H based p–i–n solar cells we used the in-situ Kelvin probe technique to…”
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Device-quality polycrystalline silicon films deposited at low process temperatures by hot-wire chemical vapor deposition by Saha, S.C., Guillet, J., Equer, B., Bourée, J.E.

“…Device-grade undoped hydrogenated polycrystalline silicon thin films have been developed from a gas mixture of silane and hydrogen using a hot-wire chemical…”
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Leakage current studies of thick a-Si:H detectors under high electric field conditions by Ilie, A, Equer, B, Pochet, T

“…The leakage current of thick (up to 20 μm) a-Si:H p-i-n diodes developed for nuclear radiation detection were investigated. Performing current-voltage…”
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High electric field hole mobility in a-Si:H by Juška, G, Arlauskas, K, Equer, B, Vanderhaghen, R

“…The time-of-flight method at largest possible electric field (to 0.75 MV/cm) and at temperatures up to 450 K was used for hole drift mobility investigations…”
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Sensitivity measurements of thick amorphous-silicon p-i-n nuclear detectors by Pochet, T., Ilie, A., Brambilla, A., Equer, B.

“…20 /spl mu/m thick p-i-n diodes were deposited at high rate using a PECVD process. The p-i-n structures have been specifically tailored in order to sustain…”
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Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition by Niikura, C, Guillet, J, Brenot, R, Equer, B, Bourée, J.E, Voz, C, Peiro, D, Asensi, J.M, Bertomeu, J, Andreu, J

“…A comparison of structural, optical and electronic properties between undoped hydrogenated microcrystalline silicon films deposited by hot-wire chemical vapor…”
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Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD by Pochet, T., Ilie, A., Foulon, F., Equer, B.

“…This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH/sub 4/ in…”
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EBIC study of electron generation function in a-Si:H by Najar, S, Equer, B

“…The electron beam induced current technique was used to study electron energy loss in amorphous hydrogenated silicon a-Si:H. This study leads to the…”
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Deposition parameters and surface topography of a-Si:H thin films obtained by the RF glow discharge process by Ebothe, J., i Cabarrocas, P. Roca, Godet, C., Equer, B.

“…The surface topography of glow discharge a-Si:H thin films has been studied here through the evaluation of the related statistical characteristics which are:…”
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Hydrogenated amorphous silicon p-doping with diborane, trimethylboron and trimethylgallium by Lloret, A., Wu, Z. Y., Th ye, M. L., Zawawi, I., Si fert, J. M., Equer, B.

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Signal formation in a-Si:H particle detectors by Hamel, L.A., Dubeau, J., Pochet, T., Equer, B.

“…The response of a hydrogenated amorphous silicon thin film p-i-n diode to protons is presented as a function of the applied bias. A typical pulse shape is also…”
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Conduction properties of a-Si:H n +-i-n + structures : analysis taking into account the effects of n +-i space-charge regions by DE ROSNY, G, EQUER, B, LABDI, A

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High electric field forming of a-Si:H p-i-n diodes: Electronic processes in hydrogenated amorphous silicon by EQUER, B, ILIE, A

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In-situ Kelvin probe and ellipsometry study of the doping of a-Si:H and a-SiC:H layers by Hadjadj, A, Favre, M, Equer, B, Roca i Cabarrocas, P

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Anisotropic magnetic centres in hydrogenated microcrystalline and polymorphous silicon by MORIGAKI, K, NIIKURA, C, BOUREE, J. E, EQUER, B

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Study of YY production in two, three and four body final states by 3.0, 3.6 and 4.0 GeV/c antiprotons in hydrogen by Musgrave, B., Petmezas, G., Riddiford, L., Böck, R., Fett, E., French, B. R., Kinson, J. B., Peyrou, Ch, Szeptycka, M., Badier, J., Bazin, M., Blaskovic, L., Equer, B., Huc, J., Borenstein, S. R., Goldsack, S. J., Miller, D. H., Meyer, J., Revel, D., Tallini, B., Zylberajch, S.

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Fundamental transport mechanisms and high field mobility measurements in amorphous silicon by Gu, Qing, Schiff, E.A., Chevrier, J.-B., Equer, B.

“…Models for high field effects observed in electron drift mobility measurements on hydrogenated amorphous silicon (a-Si:H) are discussed. In particular we…”
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High electric field hole mobility in a-Si:H by JUSKA, G, ARLAUSKAS, K, EQUER, B, VANDERHAGHEN, R

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