Search Results - "Eom, Jonghwa"

Distinct Detection of Thermally Induced Spin Voltage in Pt/WS2/Ni81Fe19 by the Inverse Spin Hall Effect by Dastgeer, Ghulam, Shehzad, Muhammad Arslan, Eom, Jonghwa

“…Conversion of heat into a spin current by means of the spin Seebeck effect (SSE) is one of the exciting topics in spin caloritronics. By use of this technique,…”
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High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films by Iqbal, M Waqas, Iqbal, M Zahir, Khan, M Farooq, Shehzad, M Arslan, Seo, Yongho, Park, Jong Hyun, Hwang, Chanyong, Eom, Jonghwa

“…An emerging electronic material as one of transition metal dichalcogenides (TMDCs), tungsten disulfide (WS 2 ) can be exfoliated as an atomically thin layer…”
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Negative Magnetoresistance in a Vertical Single-Layer Graphene Spin Valve at Room Temperature by Singh, Arun Kumar, Eom, Jonghwa

“…Single-layer graphene (SLG) is an ideal material for spintronics because of its high charge-carrier mobility, long spin lifetime resulting from the small…”
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Control of Spin Precession in a Spin-Injected Field Effect Transistor by Koo, Hyun Cheol, Kwon, Jae Hyun, Eom, Jonghwa, Chang, Joonyeon, Han, Suk Hee, Johnson, Mark

“…Spintronics increases the functionality of information processing while seeking to overcome some of the limitations of conventional electronics. The…”
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Ultimate limit in size and performance of WSe2 vertical diodes by Nazir, Ghazanfar, Kim, Hakseong, Kim, Jihwan, Kim, Kyoung Soo, Shin, Dong Hoon, Khan, Muhammad Farooq, Lee, Dong Su, Hwang, Jun Yeon, Hwang, Chanyong, Suh, Junho, Eom, Jonghwa, Jung, Suyong

“…Precise doping-profile engineering in van der Waals heterostructures is a key element to promote optimal device performance in various electrical and optical…”
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Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection by Hussain, Muhammad, Aftab, Sikandar, Jaffery, Syed Hassan Abbas, Ali, Asif, Hussain, Sajjad, Cong, Dinh Nguyen, Akhtar, Raheel, Seo, Yongho, Eom, Jonghwa, Gautam, Praveen, Noh, Hwayong, Jung, Jongwan

“…2D layered germanium selenide (GeSe) with p -type conductivity is incorporated with asymmetric contact electrode of chromium/Gold (Cr/Au) and Palladium/Gold…”
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Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method by Hussain, Sajjad, Singh, Jai, Vikraman, Dhanasekaran, Singh, Arun Kumar, Iqbal, Muhammad Zahir, Khan, Muhammad Farooq, Kumar, Pushpendra, Choi, Dong-Chul, Song, Wooseok, An, Ki-Seok, Eom, Jonghwa, Lee, Wan-Gyu, Jung, Jongwan

“…We report a simple and mass-scalable approach for thin MoS 2 films via RF sputtering combined with the post-deposition annealing process. We have prepared…”
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Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance by Khalil, Hafiz M. W, Khan, Muhammad Farooq, Eom, Jonghwa, Noh, Hwayong

“…The development of low resistance contacts to 2D transition-metal dichalcogenides (TMDs) is still a big challenge for the future generation field effect…”
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Chemical doping of MoS2 multilayer by p-toluene sulfonic acid by Andleeb, Shaista, Kumar Singh, Arun, Eom, Jonghwa

“…We report the tailoring of the electrical properties of mechanically exfoliated multilayer (ML) molybdenum disulfide (MoS 2 ) by chemical doping. Electrical…”
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The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate by Khan, Muhammad Asghar, Khan, Muhammad Farooq, Rehman, Shania, Patil, Harshada, Dastgeer, Ghulam, Ko, Byung Min, Eom, Jonghwa

“…The electrical and optical properties of transition metal dichalcogenides (TMDs) can be effectively modulated by tuning their Fermi levels. To develop a…”
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Spin valve effect of NiFe/graphene/NiFe junctions by Iqbal, Muhammad Zahir, Iqbal, Muhammad Waqas, Lee, Jae Hong, Kim, Yong Seung, Chun, Seung-Hyun, Eom, Jonghwa

“…When spins are injected through graphene layers from a transition metal ferromagnet, high spin polarization can be achieved. When detected by another…”
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Low‐Power Negative‐Differential‐Resistance Device for Sensing the Selective Protein via Supporter Molecule Engineering by Dastgeer, Ghulam, Nisar, Sobia, Shahzad, Zafar Muhammad, Rasheed, Aamir, Kim, Deok‐kee, Jaffery, Syed Hassan Abbas, Wang, Liang, Usman, Muhammad, Eom, Jonghwa

“…Van der Waals (vdW) heterostructures composed of atomically thin two‐dimensional (2D) materials have more potential than conventional metal‐oxide…”
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Optically Reconfigurable Complementary Logic Gates Enabled by Bipolar Photoresponse in Gallium Selenide Memtransistor by Rehman, Shania, Khan, Muhammad Asghar, Kim, Honggyun, Patil, Harshada, Aziz, Jamal, Kadam, Kalyani D., Rehman, Malik Abdul, Rabeel, Muhammad, Hao, Aize, Khan, Karim, Kim, Sungho, Eom, Jonghwa, Kim, Deok‐kee, Khan, Muhammad Farooq

“…To avoid the complexity of the circuit for in‐memory computing, simultaneous execution of multiple logic gates (OR, AND, NOR, and NAND) and memory behavior are…”
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Ultraviolet-light-driven charge carriers tunability mechanism in graphene by Iqbal, Muhammad Zahir, Siddique, Salma, Khan, Abbas, Sung, Dongchul, Eom, Jonghwa, Hong, Suklyun

“…Tuning the charge carrier concentrations of graphene is a fundamental feature to obtain highly efficient electronic and optoelectronic devices. We investigate…”
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Separation of Rashba and Dresselhaus spin-orbit interactions using crystal direction dependent transport measurements by Ho Park, Youn, Kim, Hyung-jun, Chang, Joonyeon, Hee Han, Suk, Eom, Jonghwa, Choi, Heon-Jin, Cheol Koo, Hyun

“…The Rashba spin-orbit interaction effective field is always in the plane of the two-dimensional electron gas and perpendicular to the carrier wavevector but…”
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Electrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions by Khan, Muhammad Farooq, Nazir, Ghazanfar, lermolenko, Volodymyr M., Eom, Jonghwa

“…The electrical and photo-electrical properties of exfoliated MoS 2 were investigated in the dark and in the presence of deep ultraviolet (DUV) light under…”
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Two-dimensional materials memory devices with floating metal gate for neuromorphic applications by Khan, Muhammad Asghar, Yim, Sungbin, Rehman, Shania, Ghafoor, Faisal, Kim, Honggyun, Patil, Harshada, Khan, Muhammad Farooq, Eom, Jonghwa

“…Emerging technologies such as neuromorphic computing and nonvolatile memories based on floating gate field-effect transistors (FETs) hold promise for…”
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Improving the electrical properties of graphene layers by chemical doping by Khan, Muhammad Farooq, Iqbal, Muhammad Zahir, Iqbal, Muhammad Waqas, Eom, Jonghwa

“…Although the electronic properties of graphene layers can be modulated by various doping techniques, most of doping methods cost degradation of structural…”
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The structural and electrical evolution of chemical vapor deposition grown graphene by electron beam irradiation induced disorder by Iqbal, M.Z., Kelekci, O., Iqbal, M.W., Eom, Jonghwa

“…The defect formation mechanism in chemical vapor deposition grown single layer graphene devices has been investigated by increasing electron beam (e-beam)…”
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Edge Oxidation Effect of Chemical-Vapor-Deposition-Grown Graphene Nanoconstriction by Iqbal, Muhammad Waqas, Iqbal, Muhammad Zahir, Jin, Xiaozhan, Hwang, Chanyong, Eom, Jonghwa

“…The edge oxidation effects of chemical-vapor-deposition-grown graphene devices with nanoconstrictions of different sizes are presented. The effects of edge…”
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