Search Results - "Eom, C. B."

Ferroelectric Tunnel Memristor by Kim, D. J, Lu, H, Ryu, S, Bark, C.-W, Eom, C.-B, Tsymbal, E. Y, Gruverman, A

“…Strong interest in resistive switching phenomena is driven by a possibility to develop electronic devices with novel functional properties not available in…”
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Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale by Gruverman, A, Wu, D, Lu, H, Wang, Y, Jang, H. W, Folkman, C. M, Zhuravlev, M. Ye, Felker, D, Rzchowski, M, Eom, C.-B, Tsymbal, E. Y

“…Using a set of scanning probe microscopy techniques, we demonstrate the reproducible tunneling electroresistance effect on nanometer-thick epitaxial BaTiO3…”
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Observation of magnetic vortex pairs at room temperature in a planar α-Fe2O3/Co heterostructure by Chmiel, F. P., Waterfield Price, N., Johnson, R. D., Lamirand, A. D., Schad, J., van der Laan, G., Harris, D. T., Irwin, J., Rzchowski, M. S., Eom, C.-B., Radaelli, P. G.

“…Vortices, occurring whenever a flow field ‘whirls’ around a one-dimensional core, are among the simplest topological structures, ubiquitous to many branches of…”
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Mechanical Writing of Ferroelectric Polarization by Lu, H., Bark, C.-W., de los Ojos, D. Esque, Alcala, J., Eom, C. B., Catalan, G., Gruverman, A.

“…Ferroelectric materials are characterized by a permanent electric dipole that can be reversed through the application of an external voltage, but a strong…”
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Terahertz Second-Harmonic Generation from Lightwave Acceleration of Symmetry-Breaking Nonlinear Supercurrents by Vaswani, C., Mootz, M., Sundahl, C., Mudiyanselage, D. H., Kang, J. H., Yang, X., Cheng, D., Huang, C., Kim, R. H. J., Liu, Z., Luo, L., Perakis, I. E., Eom, C. B., Wang, J.

“…We report terahertz (THz) light-induced second harmonic generation, in superconductors with inversion symmetry that forbid even-order nonlinearities. The THz…”
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Direct observation of a two-dimensional hole gas at oxide interfaces by Lee, H., Campbell, N., Lee, J., Asel, T. J., Paudel, T. R., Zhou, H., Lee, J. W., Noesges, B., Seo, J., Park, B., Brillson, L. J., Oh, S. H., Tsymbal, E. Y., Rzchowski, M. S., Eom, C. B.

“…The discovery of a two-dimensional electron gas (2DEG) at the LaAlO 3 /SrTiO 3 interface 1 has resulted in the observation of many properties 2 – 5 not present…”
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Enhancement of Ferroelectric Polarization Stability by Interface Engineering by Lu, H., Liu, X., Burton, J. D., Bark, C.-W., Wang, Y., Zhang, Y., Kim, D. J., Stamm, A., Lukashev, P., Felker, D. A., Folkman, C. M., Gao, P., Rzchowski, M. S., Pan, X. Q., Eom, C.-B., Tsymbal, E. Y., Gruverman, A.

“…By using theoretical predictions based on first‐principle calculations, we explore an interface engineering approach to stabilize polarization states in…”
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Controlling spin current polarization through non-collinear antiferromagnetism by Nan, T., Quintela, C. X., Irwin, J., Gurung, G., Shao, D. F., Gibbons, J., Campbell, N., Song, K., Choi, S. -Y., Guo, L., Johnson, R. D., Manuel, P., Chopdekar, R. V., Hallsteinsen, I., Tybell, T., Ryan, P. J., Kim, J. -W., Choi, Y., Radaelli, P. G., Ralph, D. C., Tsymbal, E. Y., Rzchowski, M. S., Eom, C. B.

“…The interconversion of charge and spin currents via spin-Hall effect is essential for spintronics. Energy-efficient and deterministic switching of…”
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Isostructural metal-insulator transition in VO2 by Lee, D, Chung, B, Shi, Y, G-Y, Kim, Campbell, N, Xue, F, Song, K, S-Y, Choi, Podkaminer, J P, Kim, T H, Ryan, P J, J-W, Kim, Paudel, T R, J-H, Kang, Spinuzzi, J W, Tenne, D A, Tsymbal, E Y, Rzchowski, M S, Chen, L Q, Lee, J, Eom, C B

“…Separating structure and electrons in VO2Above 341 kelvin—not far from room temperature—bulk vanadium dioxide (VO2) is a metal. But as soon as the material is…”
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Terahertz-light quantum tuning of a metastable emergent phase hidden by superconductivity by Yang, X., Vaswani, C., Sundahl, C., Mootz, M., Gagel, P., Luo, L., Kang, J. H., Orth, P. P., Perakis, I. E., Eom, C. B., Wang, J.

“…‘Sudden’ quantum quench and prethermalization have become a cross-cutting theme for discovering emergent states of matter 1 – 4 . Yet this remains challenging…”
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Ferroelastic switching for nanoscale non-volatile magnetoelectric devices by Eom, C. B, Baek, S. H, Jang, H. W, Folkman, C. M, Li, Y. L, Winchester, B, Zhang, J. X, He, Q, Chu, Y. H, Nelson, C. T, Rzchowski, M. S, Pan, X. Q, Ramesh, R, Chen, L. Q

“…Multiferroics, where (anti-) ferromagnetic, ferroelectric and ferroelastic order parameters coexist, enable manipulation of magnetic ordering by an electric…”
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Spin injection/detection using an organic-based magnetic semiconductor by Epstein, A. J, Yoo, Jung-Woo, Chen, Chia-Yi, Jang, H. W, Bark, C. W, Prigodin, V. N, Eom, C. B

“…The new paradigm of electronics, ‘spintronics’, promises to extend the functionality of information storage and processing in conventional electronics. The…”
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Emergence of room-temperature ferroelectricity at reduced dimensions by Lee, D., Lu, H., Gu, Y., Choi, S.-Y., Li, S.-D., Ryu, S., Paudel, T. R., Song, K., Mikheev, E., Lee, S., Stemmer, S., Tenne, D. A., Oh, S. H., Tsymbal, E. Y., Wu, X., Chen, L.-Q., Gruverman, A., Eom, C. B.

“…The enhancement of the functional properties of materials at reduced dimensions is crucial for continuous advancements in nanoelectronic applications. Here, we…”
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Light quantum control of persisting Higgs modes in iron-based superconductors by Vaswani, C., Kang, J. H., Mootz, M., Luo, L., Yang, X., Sundahl, C., Cheng, D., Huang, C., Kim, R. H. J., Liu, Z., Collantes, Y. G., Hellstrom, E. E., Perakis, I. E., Eom, C. B., Wang, J.

“…The Higgs mechanism, i.e., spontaneous symmetry breaking of the quantum vacuum, is a cross-disciplinary principle, universal for understanding dark energy,…”
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Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures by Bark, C. W, Sharma, P, Wang, Y, Baek, S. H, Lee, S, Ryu, S, Folkman, C. M, Paudel, T. R, Kumar, A, Kalinin, S. V, Sokolov, A, Tsymbal, E. Y, Rzchowski, M. S, Gruverman, A, Eom, C. B

“…Demonstration of a tunable conductivity of the LaAlO3/SrTiO3 interfaces drew significant attention to the development of oxide electronic structures where…”
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Mechanical Tuning of LaAlO3/SrTiO3 Interface Conductivity by Sharma, P, Ryu, S, Burton, J. D, Paudel, T. R, Bark, C. W, Huang, Z, Ariando, Tsymbal, E. Y, Catalan, G, Eom, C. B, Gruverman, A

“…In recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery…”
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Metallic and Insulating Oxide Interfaces Controlled by Electronic Correlations by Jang, H.W, Felker, D.A, Bark, C.W, Wang, Y, Niranjan, M.K, Nelson, C.T, Zhang, Y, Su, D, Folkman, C.M, Baek, S.H, Lee, S, Janicka, K, Zhu, Y, Pan, X.Q, Fong, D.D, Tsymbal, E.Y, Rzchowski, M.S, Eom, C.B

“…The formation of two-dimensional electron gases (2DEGs) at complex oxide interfaces is directly influenced by the oxide electronic properties. We investigated…”
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Giant Piezoelectricity on Si for Hyperactive MEMS by Baek, S. H., Park, J., Kim, D. M., Aksyuk, V. A., Das, R. R., Bu, S. D., Felker, D. A., Lettieri, J., Vaithyanathan, V., Bharadwaja, S. S. N., Bassiri-Gharb, N., Chen, Y. B., Sun, H. P., Folkman, C. M., Jang, H. W., Kreft, D. J., Streiffer, S. K., Ramesh, R., Pan, X. Q., Trolier-McKinstry, S., Schlom, D. G., Rzchowski, M. S., Blick, R. H., Eom, C. B.

“…Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation…”
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Electrical control of antiferromagnetic domains in multiferroic BiFeO3 films at room temperature by Zhao, T, Scholl, A, Zavaliche, F, Lee, K, Barry, M, Doran, A, Cruz, M P, Chu, Y H, Ederer, C, Spaldin, N A, Das, R R, Kim, D M, Baek, S H, Eom, C B, Ramesh, R

“…Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. In…”
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Enhancement of ferroelectricity in strained BaTiO3 thin films by Choi, K J, Biegalski, M, Li, Y L, Sharan, A, Schubert, J, Uecker, R, Reiche, P, Chen, Y B, Pan, X Q, Gopalan, V, Chen, L-Q, Schlom, D G, Eom, C B

“…Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can…”
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