Search Results - "Enstrom, R.E."

High-Power 1-GHz Coplanar Gunn-Effect Oscillators (Correspondence) by Norton, L.E., Enstrom, R.E., Hegyi, I.J.

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Efficient 1.06-µm emission from In x Ga 1-x As electroluminescent diodes by Nuese, C.J., Enstrom, R.E.

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Efficient 1.06-µm emission from InxGa1-xAs electroluminescent diodes by Nuese, C.J., Enstrom, R.E.

“…Vapor-grown p-n junctions of In x Ga 1-x As have been prepared that emit near-bandgap infrared radiation at 1.06 µm with an external quantum efficiency in…”
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V-6 1.7 µm heterojunction lasers and photodiodes of In.53Ga.47As/InP by Nuese, C.J., Enstrom, R.E., Appert, J.R.

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V-6 1.7 µm heterojunction lasers and photodiodes of In .53 Ga .47 As/InP by Nuese, C.J., Enstrom, R.E., Appert, J.R.

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Fabrication Of Controlled Duty Cycle Buried Grating Distribute Feedback Lasers At /spl lambda/=1.51/spl mu/m by Vangieson, E.A., Andrews, J.T., Enstrom, R.E., Appert, J.R., Kirk, J.B., Carlson, N.W.

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Coherent linear and two-dimensional grating-surface-emitting multi-quantum-well arrays emitting at 1.5/spl mu/m by Martinelli, R.U., Palfrey, S.L., Enstrom, R.E., Van Gieson, E.A., Hammer, J.M.

“…The objective of this work is to demonstrate coherent, mutual-injection-coupled emission at 1.5 μm from linear and two-dimensional grating-surface-emitting…”
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Efficient laser diodes of InxGa1-xAs for 1.06 µm emission by Nuese, C.J., Ettenberg, M., Enstrom, R.E., Kressel, H.

“…In x Ga 1-x As vapor-grown laser diodes that are capable of providing pulsed operation at 300°K and continuous-wave (c-w) operation at 77°K have been prepared…”
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Photoemission characteristics of transmission-mode negative electron affinity GaAs and (ln,Ga)As vapor-grown structures by Fisher, D.G., Enstrom, R.E., Escher, J.S., Gossenberger, H.F., Appert, J.R.

“…Several types of transmission-mode negative electron affinity (NEA) photocathodes were investigated. The first group consisted of GaAs cathodes of various…”
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High-efficiency transferred electron oscillators by Reynolds, J.F., Berson, B.E., Enstrom, R.E.

“…Results of material research and circuit development for high-efficiency GaAs transferred electron oscillators are described, Single-chip devices have been…”
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High-power 1-GHz coplanar Gunn-effect oscillators by Norton, L.E., Enstrom, R.E., Hegyi, I.J.

“…High peak pulsed output power (up to 100 watts), co-planar, L-band (1 GHz), epitaxial-layer Gunn oscillators are described. Particular emphasis has been given…”
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Current-gain characteristics of Schottky-barrier and p-n junction electron-beam semiconductor diodes by Siekanowicz, W.W., Ho-Chung Huang, Enstrom, R.E., Martinelli, R.U., Ponczak, S., Olmstead, J.

“…Measured and calculated current gains are presented for silicon, gallium-arsenide, and gallium-arsenide-phosphide electron-beam-semiconductor Schottky-barrier…”
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A comparison of effective doping densities of composite structures by hall and magnetoresistance measurements by Upadhyayula, L.C., Enstrom, R.E., Nuese, C.J., Wilhelm, J.F., Appert, J.R.

“…An explanation is presented to account for discrepancies noted between donor densities determined by magnetoresistance and Hall measurements when…”
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Stabilized Supercritical Transferred Electron Amplifiers by Walsh, T.E., Perlman, B.S., Enstrom, R.E.

“…GaAs transferred electron devices having nl products as large as 4 X 10/sub 12/ cm/sup -2/ have been stabilized by circuit loading to obtain linear…”
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Microwave Circuits for High-Efficiency Operation of Transferred Electron Oscillators by Reynolds, J.F., Berson, B.E., Enstrom, R.E.

“…Compact circuits for obtaining high-efficiency operation of high-power transferred electron oscillators (TEOs) in L-band are described. One is a coaxial…”
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Buried grating distributed feedback laser at lambda =1.51 mu m by Andrews, J.T., Vangieson, E.A., Enstrom, R.E., Appert, J.R., Kirk, J.B., Carlson, N.W.

“…The growth of a distributed feedback (DFB) laser by two steps of organometallic chemical vapor deposition (OMCVD) epitaxy in which the feedback grating is a…”
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High-Power 1-GHz Coplanar Gunn-Effect Oscillators by Norton, L.E., Enstrom, R.E., Hegyi, I.J.

“…High peak pulsed output power (up to 100 watts), coplanar, L-band (1 GHz), epitaxial-layer Gunn oscillators are described. Particular emphasis has been given…”
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Contributors, Nov. 1970 by Berson, B.E., Bosch, B.G., Bowers, H.C., Cawsey, D., Kern K. N. Chang, Conn, D.R., Decker, D.R., Dunn, C.N., Engelmann, R.W.H., Enstrom, R.E., Evans, W.J., Frank, R.L., Fray, S.J., Frey, W., Gibbs, S.E., Greifing, P.T., Haddad, G.I., Isobe, T., Ito, Y., Khan, P.J., Komizo, H., Kondo, H., Walter H. Ku, Lee A. MacKenzie, Marx, R.E., Midford, T.A., Mitchell, H.R., Mouthaan, K., Nagano, S., Narayan, S.Y., Osborne, T.L., Owens, R.P., Pence, I.W., Perlman, B.S., Plants, S.T., Pollmann, H., Prager, H.J., Reynolds, J.F., Rosenbaum, F.J., Sasagawa, S., Scherer, E.F., Schroeder, W.E., Steinbrecher, D.H., Sterzer, F., Stewart, J.A.C., Taylor, B.C., Tokida, M., Wei Ching Tsai, Upadhyayula, C.L., Weisbrod, S.

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