Search Results - "Engström, O"

Designing interactions by control of protein-ligand complex conformation: tuning arginine-arene interaction geometry for enhanced electrostatic protein-ligand interactions by Noresson, A-L, Aurelius, O, Öberg, C T, Engström, O, Sundin, A P, Håkansson, M, Stenström, O, Akke, M, Logan, D T, Leffler, H, Nilsson, U J

“…We investigated galectin-3 binding to 3-benzamido-2- -sulfo-galactoside and -thiodigalactoside ligands using a combination of site-specific mutagenesis, X-ray…”
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Navigation aids in the search for future high- k dielectrics: Physical and electrical trends by Engström, O., Raeissi, B., Hall, S., Buiu, O., Lemme, M.C., Gottlob, H.D.B., Hurley, P.K., Cherkaoui, K.

“…From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset…”
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The three-dimensional structures of antagonistic and agonistic forms of the glucocorticoid receptor ligand-binding domain: RU-486 induces a transconformation that leads to active antagonism by Kauppi, Björn, Jakob, Clarissa, Färnegårdh, Mathias, Yang, Jie, Ahola, Harri, Alarcon, Maria, Calles, Karin, Engström, Owe, Harlan, John, Muchmore, Steven, Ramqvist, Anna-Karin, Thorell, Susanne, Ohman, Lars, Greer, Jonathan, Gustafsson, Jan-Ake, Carlstedt-Duke, Jan, Carlquist, Mats

“…Here we describe the three-dimensional crystal structures of human glucocorticoid receptor ligand-binding domain (GR-LBD) in complex with the antagonist RU-486…”
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Electron tunneling from quantum dots characterized by deep level transient spectroscopy by Engström, O., Kaniewska, M., Kaczmarczyk, M., Jung, W.

“…Electron tunneling from In As ∕ Ga As quantum dots has been studied by deep level transient spectroscopy (DLTS). Comparing DLTS data with theory, we…”
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Structure of the ligand-binding domain of oestrogen receptor beta in the presence of a partial agonist and a full antagonist by Pike, Ashley C. W., Brzozowski, Andrzej M., Hubbard, Roderick E., Bonn, Tomas, Thorsell, Ann-Gerd, Engström, Owe, Ljunggren, Jan, Gustafsson, Jan-Åke, Carlquist, Mats

“…Oestrogens exert their physiological effects through two receptor subtypes. Here we report the three‐dimensional structure of the oestrogen receptor beta…”
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Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy by Kaniewska, M., Engström, O., Kaczmarczyk, M.

“…The coexistence of quantum confined energy levels and defect energy levels in quantum dot (QD) structures may cause difficulties in distinguishing between…”
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Deep Level Transient Spectroscopy in Quantum Dot Characterization by Engström, O, Kaniewska, M

“…Deep level transient spectroscopy (DLTS) for investigating electronic properties of self-assembled InAs/GaAs quantum dots (QDs) is described in an approach,…”
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Three dimensional mapping of thermal and tunneling electron emission from InAs∕GaAs quantum dots by Engström, O., Kaniewska, M., Jung, W., Kaczmarczyk, M.

“…Using a three dimensional representation of data from deep level transient spectroscopy (DLTS) in a parameter space given by temperature, applied sample…”
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Charge carrier traffic at self-assembled Ge quantum dots on Si by Kaniewska, M., Engström, O., Karmous, A., Oehme, M., Petersson, G., Kasper, E.

“…► Germanium quantum dots grown by MBE are characterized using two capacitance-based methods. ► The results provide information on the energy distribution of…”
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The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces by Piscator, J., Raeissi, B., Engström, O.

“…Starting from basic statistical properties of interface states, we demonstrate the influence of energy dependent interface state distributions and thermal…”
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Schottky barrier modulation on silicon nanowires by Piscator, J., Engström, O.

“…Oxide charge on the sidewalls of Si O 2 embedded silicon wires with 20 × 20 nm 2 cross section is shown to influence the Schottky barrier height for Pd 2 Si ∕…”
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Discovery of classes among deep level centers in gallium arsenide by Engström, O., Kaniewska, M.

“…By using thermal electron emission data from the literature in addition to own measured results for totally 40 data sets of deep level centers in GaAs, we…”
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Confined energy states in quantum dots detected by a resonant differential capacitance method by Engström, O., Kaniewska, M., Kaczmarczyk, M.

“…A novel method is demonstrated for revealing the presence of confined energy states in quantum dots. The samples used are Schottky diodes with quantum dots…”
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Extremely small hole capture cross sections in HfO2∕HfxSiyOz∕p-Si structures by Yousif, M. Y. A., Johansson, M., Engström, O.

“…Defects in Al∕HfO2∕HfxSiyOz∕p-Si capacitors have been characterized using thermally stimulated current at temperatures between 30 and 300K. The hole activation…”
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A new mechanism for modulation of Schottky barrier heights on silicon nanowires by Piscator, J., Engström, O.

“…For nanowires with Schottky barriers on the end surfaces, charges on the walls of the wire are close enough to the metal–semiconductor interface to influence…”
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Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique by Kaniewska, M., Engström, O., Pacholak-Cybulska, M., Sadeghi, M.

“…In order to find the origin of crystalline defects occurring in the preparation of InAs/GaAs quantum dots (QDs), their appearance was tracked through three…”
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Charge-carrier statistics at InAs/GaAs quantum dots by ENESTRÖM, O, LANDSBERG, P. T

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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy by Raeissi, B., Piscator, J., Engström, O., Hall, S., Buiu, O., Lemme, M.C., Gottlob, H.D.B., Hurley, P.K., Cherkaoui, K., Osten, H.J.

“…Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by molecular beam epitaxy (MBE) and atomic…”
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Electron capture cross sections of InAs∕GaAs quantum dots by Engström, O., Kaniewska, M., Fu, Y., Piscator, J., Malmkvist, M.

“…By measuring the thermal emission rates of electrons from InAs∕GaAs quantum dots, capture cross sections in the extremely high region of 10−11–10−10cm2 have…”
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Comprehensive study of InAs/GaAs quantum dots by means of complementary methods by Kaczmarczyk, M., Kaniewska, M., Piscator, J., Engström, O., Surma, B., Lin, S., Peaker, A.R.

“…Structural, optical, and electronic properties of self-organized InAs/GaAs quantum dots (QDs) were studied by means of atomic force microscopy (AFM),…”
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