Search Results - "Emtsev, K.V."

Structural and electronic properties of graphite layers grown on SiC(0 0 0 1) by Seyller, Th, Emtsev, K.V., Gao, K., Speck, F., Ley, L., Tadich, A., Broekman, L., Riley, J.D., Leckey, R.C.G., Rader, O., Varykhalov, A., Shikin, A.M.

“…Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of…”
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Study of the photoinduced degradation of tandem photovoltaic converters based on a-si:H/[micro]c-Si:H by Abramov, A.S, Andronikov, D.A, Emtsev, K.V, Kukin, A.V, Semenov, A.V, Terukova, E.E, Titov, A.S, Yakovlev, S.A

“…The photoinduced degradation of photovoltaic converters based on an a-Si:H/[micro]c-Si:H tandem structure under a standard illuminance of 1000 W/[m.sup.2] is…”
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Investigation of the Characteristics of Heterojunction Solar Cells Based on Thin Single-Crystal Silicon Wafers by Terukov, E. I., Abramov, A. S., Andronikov, D. A., Emtsev, K. V., Panaiotti, I. E., Titov, A. S., Shelopin, G. G.

“…The operating characteristics of heterojunction solar cells based on single-crystal silicon wafers with a reduced thickness are investigated experimentally. It…”
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Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties by Weingart, S., Bock, C., Kunze, U., Emtsev, K.V., Seyller, Th, Ley, L.

“…In this work we report on temperature-dependent magnetotransport measurements on epitaxial graphene grown on SiC ( 0 0 0 1 ) under different preparation…”
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Simulation of the natural characteristics of vertical a-Si:H/μc-Si:H tandem solar cells. 2. Analysis of the results and comparison with the experiment by Kryuchenko, Yu. V., Sachenko, A. V., Bobyl, A. V., Kostylyov, V. P., Terukov, E. I., Abramov, A. S., Verbitskiy, V. N., Emtsev, K. V., Kudryashov, S. A., Sokolovskyi, I. O.

“…Based on the general relations obtained in our previous studies, the photovoltaic characteristics of a model a -Si:H/μ c -Si:H tandem solar cell (SC) are…”
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Electronic properties of clean unreconstructed 6H–SiC(0 0 0 1) surfaces studied by angle resolved photoelectron spectroscopy by Emtsev, K.V., Seyller, Th, Ley, L., Tadich, A., Broekman, L., Riley, J.D., Leckey, R.C.G., Preuss, M.

“…The properties of the clean and unreconstructed 6H–SiC(0 0 0 1) and 6H–SiC ( 0 0 0 1 ¯ ) surfaces were investigated by means of angle-resolved photoelectron…”
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Defect production in heavily doped n-Si irradiated with fast electrons at cryogenic temperatures by Emtsev, V.V., Ehrhart, P., Emtsev, K.V., Poloskin, D.S., Dedek, U.

“…Radiation-produced defects in heavily doped n-Si with charge carriers concentrations n ⩾ 3 × 10 18 cm - 3 are investigated. The results obtained in these…”
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