Search Results - "Emelie, P."
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MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements
Published in Journal of electronic materials (01-07-2010)“…In this work, we analyze Auger suppression in HgCdTe alloy-based device structures and determine the operation temperature improvements expected when Auger…”
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2
Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes under Nonequilibrium Operation
Published in Journal of electronic materials (01-09-2008)“…The general approach and effects of nonequilibrium operation of Auger-suppressed HgCdTe infrared photodiodes are well understood. However, the complex…”
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Journal Article Conference Proceeding -
3
Modeling and design considerations of HgCdTe infrared photodiodes under nonequilibrium operation
Published in Journal of electronic materials (01-08-2007)“…The general approach and effects of nonequilibrium operation of Auger suppressed HgCdTe infrared detectors are well understood. However, the complex…”
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Conference Proceeding Journal Article -
4
Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes
Published in Journal of electronic materials (01-07-2010)“…Controllable p -type doping at low concentrations is desired for multilayer HgCdTe samples in a P + /π/ N + structure due to the promise of suppressing Auger…”
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5
Free carrier absorption and lattice vibrational modes in bulk ZnO
Published in Journal of electronic materials (01-04-2006)“…The electronic properties of semiconductors are highly dependent on carrier scattering mechanisms determined by crystalline structure, band structure, and…”
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Journal Article -
6
Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes
Published in Journal of electronic materials (01-09-2008)“…We demonstrated a device with a unique planar architecture using a novel approach for obtaining low arsenic doping concentrations in long-wavelength (LW)…”
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Journal Article Conference Proceeding -
7
Electrical characteristics of PEDOT: PSS organic contacts to HgCdTe
Published in Journal of electronic materials (01-08-2007)“…The electrical characteristics of organic (3,4-polyethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) contacts to HgCdTe are studied as a potential…”
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8
Effect of Atmosphere on n-Type Hg1–xCdxTe Surface after Different Wet Etching Treatments: An Electrical and Structural Study
Published in Journal of electronic materials (01-09-2008)“…The impact on surface recombination velocity (SRV) and minority carrier lifetime of three wet etchants are examined here. The etchants are 60DI + 10HBr + 1H 2…”
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9
Effects of facial expression on working memory
Published in International journal of psychology (01-08-2016)“…In long‐term memory (LTM) emotional content may both enhance and impair memory, however, disagreement remains whether emotional content exerts different…”
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10
Effect of Atmosphere on n-Type Hg^sub 1-x^Cd^sub x^Te Surface after Different Wet Etching Treatments: An Electrical and Structural Study
Published in Journal of electronic materials (01-09-2008)“…The impact on surface recombination velocity (SRV) and minority carrier lifetime of three wet etchants are examined here. The etchants are 60DI + 10HBr +…”
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Journal Article -
11
Effect of Atmosphere on n-Type Hgsub 1-xCdsub x exp e Surface after Different Wet Etching Treatments: An Electrical and Structural Study
Published in Journal of electronic materials (01-09-2008)“…The impact on surface recombination velocity (SRV) and minority carrier lifetime of three wet etchants are examined here. The etchants are 60DI + 10HBr + 1Hsub…”
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Journal Article -
12
Factors Associated With Recurrent Falls in Individuals With Traumatic Spinal Cord Injury: A Multicenter Study
Published in Archives of physical medicine and rehabilitation (01-11-2016)“…Abstract Objective To identify factors associated with recurrent falls in individuals with traumatic spinal cord injury (SCI). Design Cross-sectional…”
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13
Free carrier absorption and lattice vibrational modes in bulk ZnO: Group III Nitrides, SiC, and ZnO
Published in Journal of electronic materials (2006)Get full text
Journal Article -
14
Simultaneous two-color Infrared detectors based on MBE-grown HgCdTe heterostructures
Published in 2007 International Semiconductor Device Research Symposium (01-12-2007)“…We present here a two-color IR detector technology based on HgCdTe heterostructures grown by molecular beam epitaxy (MBE). Increased uniformity in composition,…”
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Conference Proceeding