Search Results - "Em. Vamvakas, V."
-
1
FTIR characterization of light emitting Si-rich nitride films prepared by low pressure chemical vapor deposition
Published in Surface & coatings technology (25-09-2007)“…We report on the infrared transmission and light emission of Si-rich nitride (SRN) films prepared by low pressure chemical vapor deposition (LPCVD) from…”
Get full text
Journal Article Conference Proceeding -
2
Optical and structural properties of copper oxide thin films grown by oxidation of metal layers
Published in Thin solid films (05-12-2006)“…Copper oxide films were grown by oxidation of vacuum evaporated copper layers on silicon substrates. Oxidations were performed at atmospheric pressure, in a…”
Get full text
Journal Article -
3
Thermally activated conduction mechanisms in Silicon Nitride MIS structures
Published in Thin solid films (26-02-2010)“…This publication reports on thermally activated currents in n-silicon/Si 3N 4/Al structures. The samples prepared were examined by means of I–V, C–V, ac…”
Get full text
Journal Article Conference Proceeding -
4
Efficient infrared emission from periodically patterned thin metal films on a Si photonic crystal
Published in Microelectronic engineering (01-05-2008)“…We have fabricated a periodic array of holes with diameters of a few microns on thin metal films on a Si substrate by using lithographic techniques, and…”
Get full text
Journal Article Conference Proceeding -
5
Efficient infrared emission from patterned thin metal films on a Si photonic crystal
Published in Physica status solidi. A, Applications and materials science (01-11-2008)“…We study the infrared optical response of periodically patterned thin metal films on a Si photonic crystal using Fourier‐transform infrared spectroscopy and…”
Get full text
Journal Article -
6
High-density plasma silicon oxide thin films grown at room-temperature
Published in Microelectronic engineering (01-05-2008)“…The fabrication at room-temperature of thin (<8nm) silicon oxide films has been achieved, in a high-density helicon plasma source reactor using Ar/O2 mixture,…”
Get full text
Journal Article Conference Proceeding -
7
Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation
Published in Microelectronic engineering (01-09-2007)“…This work presents an alternative method for the formation of the top oxide in oxide-nitride-oxide structures. The method utilizes low-energy (1 keV) Si ion…”
Get full text
Journal Article Conference Proceeding -
8
Probing the electrical properties of the Si nitride/Si interface
Published in 2010 27th International Conference on Microelectronics Proceedings (01-05-2010)“…The present publication employs Dielectric Relaxation Spectroscopy for the examination of the relaxation mechanisms in silicon nitride MIS structures. These…”
Get full text
Conference Proceeding -
9
Optical characterization of Si-rich silicon nitride films prepared by low pressure chemical vapor deposition
Published in Microelectronics and reliability (01-04-2007)“…An investigation of the optical properties of Si-rich silicon nitride films prepared by low pressure chemical vapor deposition (LPCVD) from dichlorosilane (SiH…”
Get full text
Journal Article Conference Proceeding -
10
Wet oxidation of nitride layer implanted with low-energy Si ionsfor improved oxide-nitride-oxide memory stacks
Published in Applied physics letters (29-06-2007)“…An alternative method for the formation of the top oxide in oxide-nitride-oxide dielectric stacks is proposed. This method combines low-energy ( 1 keV )…”
Get full text
Journal Article -
11
Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks
Published in Applied physics letters (25-06-2007)“…An alternative method for the formation of the top oxide in oxide-nitride-oxide dielectric stacks is proposed. This method combines low-energy (1keV) silicon…”
Get full text
Journal Article -
12
Influence of the annealing temperature on the IR properties of SiO2 films grown from SiH4 + O2
Published in Microelectronics and reliability (01-05-2005)Get full text
Conference Proceeding Journal Article -
13
Correlation between infrared transmission spectra and the interface trap density of SiO2 films
Published in Microelectronics and reliability (01-04-2007)Get full text
Conference Proceeding Journal Article -
14
-
15
Low pressure chemical vapor deposition from TEOS-NH sub(3) mixtures: Thermochemical study of the process considering kinetic data
Published in Microelectronics and reliability (01-01-1999)“…A calculational thermodynamic investigation of the chemical vapor deposition (CVD) of SiO sub(2) films from TEOS/NH sub(3) mixtures has been performed, by…”
Get full text
Journal Article -
16
Thermodynamic study and characterization of low pressure chemically vapor deposited silicon oxynitride films from tetraethylorthosilicate, dichlorosilane and ammonia gas mixtures
Published in Thin solid films (01-04-2003)“…This work describes the thermodynamic simulation and the experimental investigation of the chemical vapor deposition of silicon oxide and silicon oxynitride…”
Get full text
Journal Article -
17
Thermodynamic study, compositional and electrical characterization of LPCVD SiO2 films grown from TEOS/N2O mixtures
Published in Microelectronics and reliability (01-02-1998)Get full text
Conference Proceeding Journal Article -
18
Low pressure chemical vapor deposition from TEOS-NH3 mixtures : thermochemical study of the process considering kinetic data
Published in Microelectronics and reliability (01-02-1999)Get full text
Conference Proceeding Journal Article