Search Results - "Elsherif, O.S."

Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements by Elsherif, O.S., Vernon-Parry, K.D., Dharmadasa, I.M., Evans-Freeman, J.H., Airey, R.J., Kappers, M.J., Humphreys, C.J.

“…Mg-doped GaN films have been grown on sapphire by metalorganic vapour phase epitaxy. Two different buffer layer schemes between the film and the sapphire…”
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Characterisation of defects in p-GaN by admittance spectroscopy by Elsherif, O.S., Vernon-Parry, K.D., Evans-Freeman, J.H., Airey, R.J., Kappers, M., Humphreys, C.J.

“…Mg-doped GaN films have been grown on (0001) sapphire using metal organic vapour phase epitaxy. Use of different buffer layer strategies caused the threading…”
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